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    2SK341 Search Results

    2SK341 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3419-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 90A 5.5Mohm To-3P Visit Renesas Electronics Corporation
    2SK3418-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 85A 5.5Mohm To-220Ab Visit Renesas Electronics Corporation
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    2SK341 Price and Stock

    Rochester Electronics LLC 2SK3412-TL-E

    NCH 4V DRIVE SERIES
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    DigiKey 2SK3412-TL-E Bulk 198,100 650
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    Rochester Electronics LLC 2SK3415LS

    2SK3415LS - MOSFET 40A, 60V, 0.
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    DigiKey 2SK3415LS Bulk 3,378 268
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    2SK3415LS Bulk 2,000 268
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    Toshiba America Electronic Components 2SK3417(Q)

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    Quest Components 2SK3417(Q) 80
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    onsemi 2SK3415LS

    2SK3415LS - MOSFET 40A, 60V, 0.024ohm, N-Channel '
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    Rochester Electronics 2SK3415LS 2,000 1
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    onsemi 2SK3412-TL-E

    2SK3412 - N-Channel 4V Drive Series '
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    Rochester Electronics 2SK3412-TL-E 198,100 1
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    2SK341 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK3411 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK3412 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK3413LS Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK3414LS Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK3415LS Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK3416 Sanyo Semiconductor 2SK3416 Original PDF
    2SK3416 Sanyo Semiconductor Medium Output MOSFETs Original PDF
    2SK3417 Toshiba Switching Regulator Applications Original PDF
    2SK3417 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3418 Hitachi Semiconductor 2SK3418 Original PDF
    2SK3418 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3418 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK3418 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3418-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3419 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3419 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK3419 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3419-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

    2SK341 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3416

    Abstract: N7440
    Text: 注文コード No. N 7 4 4 0 2SK3416 No. N7440 21004 新 2SK3416 N チャネル MOS 形シリコン電界効果トランジスタ DC / DC コンバータ用 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original     		PDF 2SK3416 N7440 IT05363 IT05364 IT05359 IT05365 IT05366 2SK3416 N7440

    2SK3417

    Abstract: No abstract text available
    Text: 2SK3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3417 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 60 ns (typ.) • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)


    Original     		PDF 2SK3417 20oducts 2SK3417

    2SK3411

    Abstract: S-183
    Text: Ordering number : ENN7175 2SK3411 N-Channel Silicon MOSFET 2SK3411 DC / DC Converter Applications unit : mm 2083B [2SK3411] 2.3 5.5 1.5 6.5 5.0 4 0.5 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source 4 : Drain 3 2.3 2.3 SANYO : TP unit : mm


    Original     		PDF ENN7175 2SK3411 2083B 2SK3411] 2092B 2SK3411 S-183

    IT0413

    Abstract: 2SK3414LS
    Text: Ordering number : ENN7152 2SK3414LS N-Channel Silicon MOSFET 2SK3414LS DC / DC Converter Applications Features • • Package Dimensions Low ON-resistance. 4V drive. unit : mm 2078C [2SK3414LS] 10.0 4.5 2.8 0.6 16.1 16.0 3.5 7.2 3.2 1.2 1.2 14.0 3.6 0.9 0.75


    Original     		PDF ENN7152 2SK3414LS 2078C 2SK3414LS] O-220FI IT0413 2SK3414LS

    2SK3417

    Abstract: k341
    Text: 2SK3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3417 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 60 ns (typ.) • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)


    Original     		PDF 2SK3417 2SK3417 k341

    2SC3412

    Abstract: ta 7176 ta 7176 datasheet 2SK3412
    Text: Ordering number : ENN7176 2SK3412 SANYO Semiconductors DATA SHEET 2SC3412 N-Channel Silicon MOSFET DC / DC Converter Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Package Dimensions Package Dimensions unit : mm 2083B


    Original     		PDF ENN7176 2SK3412 2SC3412 2083B 2092B 2SK3412] 2SC3412 ta 7176 ta 7176 datasheet 2SK3412

    2SK3411

    Abstract: No abstract text available
    Text: Ordering number : ENN7175 2SK3411 SANYO Semiconductors DATA SHEET 2SK3411 N-Channel Silicon MOSFET DC / DC Converter Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Package Dimensions Package Dimensions unit : mm 2083B


    Original     		PDF ENN7175 2SK3411 2083B 2092B 2SK3411] 2SK3411

    2SK3413LS

    Abstract: D1306
    Text: 注文コード No. N 7 1 5 1 2SK3413LS 三洋半導体データシート N 2SK3413LS 特長 N チャネル MOS 形シリコン電界効果トランジスタ DC / DC コンバ−タ用 ・低オン抵抗。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original     		PDF 2SK3413LS IT04117 IT04120 IT04121 IT04122 2SK3413LS D1306

    Untitled

    Abstract: No abstract text available
    Text: 2SK3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3417 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 60 ns (typ.) • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)


    Original     		PDF 2SK3417

    2SK3413LS

    Abstract: No abstract text available
    Text: 2SK3413LS SPICE PARAMETER Nch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 3.2 VERSION VTH0 1.665 NLX 4.70E-07 DVT2 -0.01 UB 7.15E-21 AGS 1.00 1.07E+04 RDSW WINT 0.65 NFACTOR CDSCD PCLM 0.20 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 1.00E-11 CGDL 5.00E-10


    Original     		PDF 2SK3413LS 70E-07 15E-21 00E-11 00E-10 0E-09 80E-07 1350000E-6 1350000E-12 8E-03 2SK3413LS

    2SK3416

    Abstract: No abstract text available
    Text: Ordering number : ENN7440 2SK3416 N-Channl Silicon MOSFET 2SK3416 DC / DC Converter Applications Features unit : mm 2083B [2SK3416] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP


    Original     		PDF ENN7440 2SK3416 2083B 2SK3416] 2092B 2SK3416

    2SK3417

    Abstract: No abstract text available
    Text: 2SK3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3417 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 60 ns (typ.) · Built-in high-speed flywheel diode · Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)


    Original     		PDF 2SK3417 2SK3417

    2SK3417

    Abstract: No abstract text available
    Text: 2SK3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3417 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 60 ns (typ.) • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)


    Original     		PDF 2SK3417 2SK3417

    2SK3417

    Abstract: TC2000
    Text: 2SK3417 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3417 ○ スイッチングレギュレータ用 単位: mm • 逆回復時間が速い。 • 高速フリーホイリングダイオードを内蔵しています。


    Original     		PDF 2SK3417 2-10S1B 20070701-JA 2SK3417 TC2000

    TA-3528

    Abstract: 2SK3412 1452a
    Text: 注文コード No. N 7 1 7 6 2SK3412 三洋半導体データシート N 2SK3412 特長 N チャネル MOS 形シリコン電界効果トランジスタ DC / DC コンバ−タ用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original     		PDF 2SK3412 2092B IT04191 IT04192 IT04193 IT04194 TA-3528 2SK3412 1452a

    2SK3419

    Abstract: 2SK3419-E PRSS0004ZE-A SC-65
    Text: 2SK3419 Silicon N Channel MOS FET High Speed Power Switching REJ03G1099-0200 Previous: ADE-208-942 Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF 2SK3419 REJ03G1099-0200 ADE-208-942) PRSS0004ZE-A 2SK3419 2SK3419-E PRSS0004ZE-A SC-65

    ADJ-208-1030

    Abstract: Hitachi DSA0079 2SK3418
    Text: 2SK3418 シリコン N チャネル MOS FET 高速度電力スイッチング ADJ-208-1030 Z 第1版 2000. 07 特長 • 低オン抵抗 RDS(on) = 4.3mΩ typ. • 低電圧駆動 (4V 駆動) • スイッチング速度が速い。 外観図 TO-220AB D


    Original     		PDF 2SK3418 ADJ-208-1030 O-220AB ADJ-208-1030 Hitachi DSA0079 2SK3418

    Hitachi DSA0076

    Abstract: 2SK3419
    Text: 2SK3419 Silicon N Channel MOS FET High Speed Power Switching ADE-208-942 Z 1st. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 4.3 m typ. • 4 V gate drive device • High speed switching Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange)


    Original     		PDF 2SK3419 ADE-208-942 Hitachi DSA0076 2SK3419

    2SK3416

    Abstract: 2SC3416
    Text: Ordering number : ENN7440 2SK3416 SANYO Semiconductors DATA SHEET 2SC3416 N-Channel Silicon MOSFET DC / DC Converter Applications Features • • Low ON-resistance. Ultrahigh-speed switcing. 4V drive. Package Dimensions Package Dimensions unit : mm 2083B


    Original     		PDF ENN7440 2SK3416 2SC3416 2083B 2092B 2SK3416] 2SK3416 2SC3416

    2SK3412

    Abstract: bsim3v3 15E03 15E07
    Text: 2SK3412 SPICE PARAMETER Nch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 1.64 NLX 4.7E-07 DVT2 -0.01 UB 1.0E-21 AGS 0.33 RDSW 8.3E+03 WINT NFACTOR 0.37 CDSCD PCLM 0.01 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 1.0E-12 CGDL 1.9E-09 CLC


    Original     		PDF 2SK3412 7E-07 0E-21 0E-12 9E-09 0E-09 5E-07 7E-05 9E-07 2SK3412 bsim3v3 15E03 15E07

    2SK3413LS

    Abstract: No abstract text available
    Text: Ordering number : ENN7151 2SK3413LS N-Channel Silicon MOSFET 2SK3413LS DC / DC Converter Applications Features • • Package Dimensions Low ON-resistance. 4V drive. unit : mm 2078C [2SK3413LS] 10.0 4.5 2.8 0.6 16.1 16.0 3.5 7.2 3.2 1.2 1.2 14.0 3.6 0.9 0.75


    Original     		PDF ENN7151 2SK3413LS 2078C 2SK3413LS] O-220FI 2SK3413LS

    2SK3418

    Abstract: 2SK3418-E
    Text: 2SK3418 Silicon N Channel MOS FET High Speed Power Switching REJ03G0407-0200 Previous ADE-208-941 (Z Rev.2.00 Sep.10.2004 Features • Low on-resistance RDS(on) = 4.3 mΩ typ. • Capable of 4 V gate drive • High speed switching Outline TO-220AB D 1. Gate


    Original     		PDF 2SK3418 REJ03G0407-0200 ADE-208-941 O-220AB VGSS-900 Unit2607 2SK3418 2SK3418-E

    2SK3415LS

    Abstract: No abstract text available
    Text: Ordering number : ENN7153 2SK3415LS N-Channel Silicon MOSFET 2SK3415LS DC / DC Converter, Motor Driver Applications Features • • Package Dimensions Low ON-resistance. 4V drive. unit : mm 2078C [2SK3415LS] 10.0 4.5 2.8 0.6 16.1 16.0 3.5 7.2 3.2 1.2 1.2


    Original     		PDF ENN7153 2SK3415LS 2078C 2SK3415LS] O-220FI 2SK3415LS

    ta 7176

    Abstract: ta 7176 datasheet 2SK3412
    Text: Ordering number : ENN7176 2SK3412 N-Channel Silicon MOSFET 2SK3412 DC / DC Converter Applications unit : mm 2083B [2SK3412] 2.3 5.5 1.5 6.5 5.0 4 0.5 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source 4 : Drain 3 2.3 2.3 SANYO : TP unit : mm


    Original     		PDF ENN7176 2SK3412 2083B 2SK3412] 2092B ta 7176 ta 7176 datasheet 2SK3412