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    2SK323 Search Results

    2SK323 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3230-T1-A Renesas Electronics Corporation Switching N-Channel Power Mosfet, TUSM, /Embossed Tape Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SK323 Price and Stock

    Rochester Electronics LLC 2SK3230B-T1-A

    N-CHANNEL SMALL SIGNAL MOSFET
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    DigiKey 2SK3230B-T1-A Bulk 126,000 1,159
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    Rochester Electronics LLC 2SK3230-T1-A

    SMALL SIGNAL FET
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    DigiKey 2SK3230-T1-A Bulk 120,000 1,159
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    Rochester Electronics LLC 2SK3230C-T1-A

    N-CHANNEL SMALL SIGNAL MOSFET
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    DigiKey 2SK3230C-T1-A Bulk 1,159
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    Renesas Electronics Corporation 2SK3230-T1-A

    2SK3230 - Small Signal Field-Effect Transistor '
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    Rochester Electronics 2SK3230-T1-A 120,000 1
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    Renesas Electronics Corporation 2SK3230B-T1-A

    2SK3230 - Small Signal Field-Effect Transistor, N-Channel JFET '
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    Rochester Electronics 2SK3230B-T1-A 126,000 1
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    Find more 2SK323 price and stock on Findchips.com

    2SK323 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK323 Hitachi Semiconductor Silicon N-Channel Junction FET Scan PDF
    2SK323 Unknown FET Data Book Scan PDF
    2SK3230 NEC Junction type field effect transistor Original PDF
    2SK3230B NEC N-CHANNEL SILICON J-FET Original PDF
    2SK3230C NEC JUNCTION FIELD EFFECT TRANSISTOR Original PDF
    2SK3233 Hitachi Semiconductor N-channel MOSFET high speed power switching, 500V, 5A Original PDF
    2SK3233 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3233 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3234 Hitachi Semiconductor N-Channel Mosfet Original PDF
    2SK3234 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3234 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK3235 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3236 Toshiba Original PDF
    2SK3236 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3237LS Sanyo Semiconductor Original PDF
    2SK3238 Sanyo Semiconductor TO-3PB, ZP, SMP Type Transistors Scan PDF
    2SK3239 Sanyo Semiconductor TO-3PB, ZP, SMP Type Transistors Scan PDF
    2SK3239L-E Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK3239STL-E Renesas Technology Silicon N Channel MOS FET Original PDF

    2SK323 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3235

    Abstract: Hitachi DSA0076
    Text: 2SK3235 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1371 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 0.3 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A)


    Original     		PDF 2SK3235 ADE-208-1371 2SK3235 Hitachi DSA0076

    Untitled

    Abstract: No abstract text available
    Text: 2SK3233 Spice parameter .SUBCKT 2sk3233 1 2 3 * Model generated on Jul 20, 99 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model Version 1.0 * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u * Default values used in MM:


    Original     		PDF 2SK3233 1e-32 7929e-06 10772e-08 5e-09 29405e-10 37929e-06

    2SK3235

    Abstract: 10External
    Text: 2SK3235 Spice parameter .SUBCKT 2sk3235 1 2 3 * Model generated on Jul 21, 99 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model Version 1.0 * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u * Default values used in MM:


    Original     		PDF 2SK3235 1e-32 81823e-05 46063e-08 5e-09 49447e-09 10External

    K3236

    Abstract: 2SK3236
    Text: 2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ.)


    Original     		PDF 2SK3236 K3236 2SK3236

    2SK3237LS

    Abstract: 2SK3237
    Text: 2SK3237LS N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications ・Low ON-state resistance. ・Low Qg Absolute Maximum Ratings／Ta=25℃ Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current（DC）


    Original     		PDF 2SK3237LS VDS500V VDS10V VGS10V VDS20V VDS200V 2SK3237LS 2SK3237

    2SK3233

    Abstract: PRSS0003AE-A
    Text: 2SK3233 Silicon N Channel MOS FET High Speed Power Switching REJ03G1096-0200 Previous: ADE-208-1369 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: RDS (on) = 1.1 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)


    Original     		PDF 2SK3233 REJ03G1096-0200 ADE-208-1369) PRSS0003AE-A O-220C 2SK3233 PRSS0003AE-A

    2SK3233

    Abstract: PRSS0003AE-A 2SK3233-E
    Text: 2SK3233 Silicon N Channel MOS FET High Speed Power Switching REJ03G1096-0200 Previous: ADE-208-1369 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: RDS (on) = 1.1 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)


    Original     		PDF 2SK3233 REJ03G1096-0200 ADE-208-1369) PRSS0003AE-A O-220C 2SK3233 PRSS0003AE-A 2SK3233-E

    d1889

    Abstract: 2SK3230C SC-89 marking EE
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3230C contains a diode and high resistivity 3 0.8 ±0.1 phones. 1.6 ±0.1 for compact ECMs for audio or mobile devices such as cell-


    Original     		PDF 2SK3230C 2SK3230C d1889 SC-89 marking EE

    TC5080

    Abstract: K3236
    Text: 2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ.)


    Original     		PDF 2SK3236 TC5080 K3236

    2SK3230B

    Abstract: SC-89
    Text: データ・シート 接合形電界効果トランジスタ Junction Field Effect Transistor 2SK3230B N チャネル接合形シリコン電界効果トランジスタ ECM インピーダンス変換用 外形図（単位：mm） 2SK3230B は，ゲート - ソース間にダイオードと高抵抗を内


    Original     		PDF 2SK3230B SC-89 D17283JJ1V0DS00 283JJ1V0DS D17283JJ1V0DS 2SK3230B SC-89

    2SK3230B

    Abstract: SC-89
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3230B is suitable for converter of ECM. +0.1 0.3 ±0.05 0.1–0.05 0.4 General-purpose product.


    Original     		PDF 2SK3230B 2SK3230B SC-89 SC-89

    Hitachi DSA0076

    Abstract: 2SK3234
    Text: 2SK3234 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1370 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 0.65 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A)


    Original     		PDF 2SK3234 ADE-208-1370 220CFM Hitachi DSA0076 2SK3234

    2SK3234

    Abstract: Hitachi DSA00128
    Text: 2SK3234 シリコン N チャネル MOS FET 高速度電力スイッチング ADJ-208-696F Z 第7版 2002.01 特長 • 低オン抵抗：RDS(on) =0.65Ω typ. • ドレイン遮断電流が低い：IDSS=1µA max (at VDS=500V) • スイッチング速度が速い：tf=25ns typ (at VGS=10V, VDD=250V, ID=4A)


    Original     		PDF 2SK3234 ADJ-208-696F O-220CFM Tch150 2SK3234 Hitachi DSA00128

    2SK3234

    Abstract: No abstract text available
    Text: 2SK3234 Silicon N Channel MOS FET High Speed Power Switching REJ03G1097-0200 Previous: ADE-208-1370 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: RDS (on) = 0.65 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A)


    Original     		PDF 2SK3234 REJ03G1097-0200 ADE-208-1370) PRSS0003AE-A O-220C 2SK3234

    2SK3233

    Abstract: Hitachi DSA0076
    Text: 2SK3233 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1369 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 1.1 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)


    Original     		PDF 2SK3233 ADE-208-1369 220CFM 2SK3233 Hitachi DSA0076

    K3236

    Abstract: No abstract text available
    Text: 2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ.)


    Original     		PDF 2SK3236 K3236

    2SK3236

    Abstract: K3236
    Text: 2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 42 S (typ.)


    Original     		PDF 2SK3236 105lled 2SK3236 K3236

    2SK3234

    Abstract: PRSS0003AE-A
    Text: 2SK3234 Silicon N Channel MOS FET High Speed Power Switching REJ03G1097-0200 Previous: ADE-208-1370 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: RDS (on) = 0.65 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A)


    Original     		PDF 2SK3234 REJ03G1097-0200 ADE-208-1370) PRSS0003AE-A O-220C 2SK3234 PRSS0003AE-A

    k3236

    Abstract: 2SK3236 M1-M10
    Text: 2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm 4 V gate drive · Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ.) ·


    Original     		PDF 2SK3236 k3236 2SK3236 M1-M10

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    2SK323

    Abstract: DCIM
    Text: HITACHI 2SK323 SILICON N-CHANNEL JUNCTION FET LOW FREQUENCY AM PURER - T s : ir -• ■ ■ î-i-f'- 'i* trV 0 ■Î • wr L_. - S- S >* * <»s:r *1 - vü . .-*-■ ' .<*. n ," ï: - - []/ MPAK ■ ABSOLUTE MAXIMUM RATINGS {T*=2S‘C) Symbol I«cm ti;»c lo MHirtc v«ll«|;c


    OCR Scan     		PDF 2SK323 25K323 25K186. 2SK323 DCIM

    2SK186

    Abstract: 2SK323
    Text: HITACHI 2SK323 SILICON N-CHANNEL JUNCTION FET LOW FREQ U EN C Y AM PLIFIER í 4 -’ A.à I/-* I |£1 T ï '¿i 3 i* 1 0-0 • 1ÎÏÏ_ LU—1 1: _ î . '» lo .» i 53 i* 28"?; ». !>!■* ì S*iA{ ) iiw (l)iir<iiuiHii «Htrm ) d E I {MP AK) ■ ABSO LU T E MAXIMUM RATINGS (Ta=2$°C)


    OCR Scan     		PDF 2SK323 2SK323 2SK186. 2SK186