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    2SK311 Search Results

    2SK311 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3113-Z-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-3Z, /Bag Visit Renesas Electronics Corporation
    2SK3110-AZ Renesas Electronics Corporation Switching N Channel MOSFET Visit Renesas Electronics Corporation
    2SK3116-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3112-Z-E1-AZ Renesas Electronics Corporation Switching N Channel MOSFET Visit Renesas Electronics Corporation
    2SK3116-S19-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
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    2SK311 Price and Stock

    Rochester Electronics LLC 2SK3115B(1)-S32-AY

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3115B(1)-S32-AY Bulk 47,200 83
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    • 100 $3.62
    • 1000 $3.62
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    Rochester Electronics LLC 2SK3116B-ZK-E1-AY

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3116B-ZK-E1-AY Bulk 28,000 126
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    Rochester Electronics LLC 2SK3116B-S19-AY

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3116B-S19-AY Bulk 20,000 126
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    Rochester Electronics LLC 2SK3116(1)-ZK-E2-AZ

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3116(1)-ZK-E2-AZ Bulk 18,400 126
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    Rochester Electronics LLC 2SK3119-TD-E

    NCH 2.5V DRIVE SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3119-TD-E Bulk 16,000 1,211
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    2SK311 Datasheets (61)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK311 Hitachi Semiconductor SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) Scan PDF
    2SK311 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK311 Unknown FET Data Book Scan PDF
    2SK311 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK311 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3110 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK3110 NEC Switching N-Channel Power MOS FET Industrial Use Original PDF
    2SK3110 NEC Semiconductor Selection Guide Original PDF
    2SK3111 Kexin N-Channel MOSFET Original PDF
    2SK3111 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK3111 NEC Switching N-Channel Power MOS FET Industrial Use Original PDF
    2SK3111 NEC Semiconductor Selection Guide Original PDF
    2SK3111 TY Semiconductor N-Channel MOSFET - TO-263 Original PDF
    2SK3111-S NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK3111-S NEC Switching N-Channel Power MOS FET Industrial Use Original PDF
    2SK3111-Z NEC MOS FET Original PDF
    2SK3111-ZJ NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK3111-ZJ NEC Switching N-Channel Power MOS FET Industrial Use Original PDF
    2SK3112 Kexin N-Channel MOSFET Original PDF
    2SK3112 NEC MOS FET Original PDF

    2SK311 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3114 equivalent

    Abstract: 2sk3114 2SK3114 APPLICATION
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and PART NUMBER


    Original
    PDF 2SK3114 2SK3114 O-220 O-220) O-220 2SK3114 equivalent 2SK3114 APPLICATION

    2SK3110

    Abstract: d1333
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC


    Original
    PDF 2SK3110 2SK3110 O-220 O-220 d1333

    2SK3111

    Abstract: 2SK3111-S 2SK3111-ZJ MP-25
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that PART NUMBER PACKAGE 2SK3111 TO-220AB 2SK3111-S TO-262 2SK3111-ZJ TO-263 features a low on-state resistance and excellent


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    PDF 2SK3111 2SK3111 O-220AB 2SK3111-S O-262 2SK3111-ZJ O-263 2SK3111-S 2SK3111-ZJ MP-25

    D1806

    Abstract: 2SK3113B 2SK3113B-S15-AY 2SK3113B-ZK-E2-AY transistor types full 2SK3113B-ZK-E1-AY MP 6102
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.


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    PDF 2SK3113B 2SK3113B 2SK3113B-S15-AY -S27-AY O-251 D1806 2SK3113B-S15-AY 2SK3113B-ZK-E2-AY transistor types full 2SK3113B-ZK-E1-AY MP 6102

    2SK3114B-S17-AY

    Abstract: 2SK3114B
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3114B is N-channel MOS FET device that features a low PART NUMBER gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC


    Original
    PDF 2SK3114B 2SK3114B 2SK3114B-S17-AY O-220 O-220 O-220) 2SK3114B-S17-AY

    2SK3111

    Abstract: 2SK3111-S 2SK3111-ZJ MP-25
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,


    Original
    PDF 2SK3111 2SK3111 O-262 2SK3111-ZJ O-220AB 2SK3111-S O-263 2SK3111-S 2SK3111-ZJ MP-25

    2SK3113

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3113 Features TO-252 Low on-state resistance MAX. VGS = 10 V, ID = 1.0 A +0.15 1.50-0.15 RDS(on) = 4.4 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low gate charge Avalanche capability ratings


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    PDF 2SK3113 O-252 2SK3113

    2SK3110

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC


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    PDF 2SK3110 2SK3110 O-220 O-220

    K3117

    Abstract: 2SK3117 K311
    Text: 2SK3117 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3117 Chopper Regulator DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.21 Ω (typ.) z High forward transfer admittance : |Yfs| = 17 S (typ.)


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    PDF 2SK3117 K3117 2SK3117 K311

    Untitled

    Abstract: No abstract text available
    Text: 2SK3117 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3117 Chopper Regulator DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.21 Ω (typ.) High forward transfer admittance : |Yfs| = 17 S (typ.)


    Original
    PDF 2SK3117

    2SK3116

    Abstract: 2SK3116-S 2SK3116-ZJ MP-25
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3116 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description Ordering Information The 2SK3116 is N channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power


    Original
    PDF 2SK3116 2SK3116 O-262 2SK3116-ZJ O-220 2SK3116-S O-263 2SK3116-S 2SK3116-ZJ MP-25

    2sk3114

    Abstract: 2SK3114 equivalent
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2SK3114 is N-Channel DMOS FET device that features a Ordering Information low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power


    Original
    PDF 2SK3114 2SK3114 O-220 O-220 2SK3114 equivalent

    2SK3113 equivalent

    Abstract: 2SK3113 2SK3113-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a ORDERING INFORMATION low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power


    Original
    PDF 2SK3113 2SK3113 O-251 2SK3113-Z O-252 2SK3113 equivalent 2SK3113-Z

    2SK3116

    Abstract: 2SK3116-S 2SK3116-Z MP-25 MP-25Z
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3116 N チャネル パワーMOS FET スイッチング用 2SK3116 は N チャネル縦型 MOS FET でオン抵抗が低く,スイッチング特性が優れており,スイッチング電源,AC


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    PDF 2SK3116 O-220AB 2SK3116-S O-262 2SK3116-Z O-220SMD D13339JJ2V0DS 2SK3116 2SK3116-S 2SK3116-Z MP-25 MP-25Z

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SK3116 TO-263 +0.1 1.27-0.1 Features Low gate charge Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 RDS on = 1.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low on-state resistance MAX. (VGS = 10 V, ID = 3.75 A) Avalanche capability ratings


    Original
    PDF 2SK3116 O-263

    K3117

    Abstract: 2SK3117
    Text: 2SK3117 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3117 Chopper Regulator DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.21 Ω (typ.) High forward transfer admittance : |Yfs| = 17 S (typ.)


    Original
    PDF 2SK3117 K3117 2SK3117

    nec 2501

    Abstract: 2SK3110 nec 2702
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,


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    PDF 2SK3110 2SK3110 O-220 O-220 nec 2501 nec 2702

    2SK3114 equivalent

    Abstract: 2SK3114
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2SK3114 is N-Channel DMOS FET device that features a Ordering Information low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power


    Original
    PDF 2SK3114 2SK3114 O-220 O-220 2SK3114 equivalent

    2SK3116B-S19-AY

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3116B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3116B is N-channel MOS FET device that features a PART NUMBER low gate charge and excellent switching characteristics, and 2SK3116B-S19-AY


    Original
    PDF 2SK3116B 2SK3116B 2SK3116B-S19-AY O-220AB MP-25) O-263 MP-25ZK) 2SK3116B-ZK-E1-AY O-220AB) 2SK3116B-S19-AY

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a PART NUMBER low gate charge and excellent switching characteristics, and 2SK3113B-S15-AY


    Original
    PDF 2SK3113B 2SK3113B 2SK3113B-S15-AY O-251 O-252 2SK3113B-ZK-E1-AY O-251)

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a PART NUMBER low gate charge and excellent switching characteristics, and 2SK3113B-S15-AY


    Original
    PDF 2SK3113B 2SK3113B 2SK3113B-S15-AY O-251 O-252 2SK3113B-ZK-E1-AY O-251)

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION NEC / MOS FIELD EFFECT TRANSISTOR / 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,


    OCR Scan
    PDF 2SK3111 2SK3111 O-262 2SK3111-ZJ O-220AB 2SK3111-S O-263

    2SK3112

    Abstract: 2SK3112-S 2SK3112-ZJ MP-25
    Text: PRELIMINARY PRODUCT INFORMATION NEC / MOS FIELD EFFECT TRANSISTOR / 2SK3112 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2S K 3112 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,


    OCR Scan
    PDF 2SK3112 2SK3112 2SK3112-S 2SK3112-ZJ O-220AB O-262 O-263 O-220AB MP-25

    K3115

    Abstract: No abstract text available
    Text: DATA SHEET_ NEC MOS FIELD EFFECT TRANSISTOR 2SK3115 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2S K 3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.


    OCR Scan
    PDF 2SK3115 K3115 T0-220 P-45F) K3115