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    2SK3018 PACKAGE Search Results

    2SK3018 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    2SK3018 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3018

    Abstract: T106
    Text: 2SK3018 Transistor 2.5V Drive Nch MOS FET 2SK3018 zExternal dimensions Unit : mm zStructure Silicon N-channel MOSFET UMT3 2.0 0.9 0.2 0.3 0.7 1.25 (1) (2) 0.1Min. zApplications Interfacing, switching (30V, 100mA) 2.1 (3) 0.65 0.65 1.3 zFeatures 1) Low on-resistance.


    Original     		PDF 2SK3018 100mA) 2SK3018 T106

    mosfet equivalent

    Abstract: 2SK3018 T106 2SK3018 sc70
    Text: 2SK3018 Transistor Small switching 30V, 0.1A 2SK3018 zExternal dimensions (Unit : mm) zApplications Interfacing, switching (30V, 100mA) 2.0±0.2 0.9±0.1 1.3±0.1 (2) (2) (3) (3) 0.7±0.1 0 to 0.1 0.3+0.1 0.15±0.05 −0 All terminals have same dimensions


    Original     		PDF 2SK3018 100mA) SC-70 mosfet equivalent 2SK3018 T106 2SK3018 sc70

    Untitled

    Abstract: No abstract text available
    Text: 2SK3018 Transistor 2.5V Drive Nch MOS FET 2SK3018 zExternal dimensions Unit : mm zStructure Silicon N-channel MOSFET UMT3 2.0 0.9 0.2 0.3 0.7 1.25 (1) (2) 0.1Min. zApplications Interfacing, switching (30V, 100mA) 2.1 (3) 0.65 0.65 1.3 zFeatures 1) Low on-resistance.


    Original     		PDF 2SK3018 100mA) 2SK3018

    um6k1n

    Abstract: 2SK3018
    Text: Transistor Small switching 30V, 0.1A UM6K1N FFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half. 4) Low on-resistance. 5) Low voltage drive (2.5V) makes this


    Original     		PDF 2SK3018 100mA) um6k1n

    UM6K1N

    Abstract: two transistor forward 2SK3018
    Text: Transistor Small switching 30V, 0.1A UM6K1N FFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half. 4) Low on-resistance. 5) Low voltage drive (2.5V) makes this


    Original     		PDF 2SK3018 100mA) UM6K1N two transistor forward

    2SK3018

    Abstract: UM5K1N
    Text: UM5K1N Transistors 2.5V Drive Nch+Nch MOS FET UM5K1N zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET UMT5 2.0 1.3 zFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance.


    Original     		PDF 2SK3018 100mA) 30ipment UM5K1N

    UM5K1N

    Abstract: 2SK3018 two transistor forward
    Text: Transistor Small switching 30V, 0.1A UM5K1N FFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (2.5V) makes this device ideal for portable equipment. 5) Easily designed drive circuits.


    Original     		PDF 2SK3018 100mA) UM5K1N two transistor forward

    02M45

    Abstract: No abstract text available
    Text: UM5K1N Transistors 2.5V Drive Nch+Nch MOS FET UM5K1N zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET UMT5 2.0 1.3 zFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance.


    Original     		PDF 2SK3018 100mA) 02M45

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS UM6K1N SOT-363 Dual N-channel MOSFET FEATURES 1 Two 2SK3018 transistors in a package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half.


    Original     		PDF OT-363 OT-363 2SK3018

    Untitled

    Abstract: No abstract text available
    Text: UM6K1N Transistors 2.5V Drive Nch+Nch MOS FET UM6K1N zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm UMT6 2.0 0.9 1.3 0.65 0.65 0.7 (5) (4) (6) 1.25 2.1 1pin mark (3) (1) (2) 0.2 0.1Min. zFeatures 1) Two 2SK3018 transistors in a single UMT package.


    Original     		PDF 2SK3018 100mA) R1102A

    2SK3018 SOT-23

    Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET MOSFET IGSS 100uA 2sk3018 package mosfet vgs 5v n-channel mosfet vgs 3v
    Text: 2SK3018 N-Channel Enhancement Mode MOSFET • Features • External dimensions 1 Low on-resistance. 2) Fast switching speed. 3) Low voltage drive 2.5V) makes this ③ device ideal for portable equipment. ② 4) Easily designed drive circuits. ① 5) Easy to parallel.


    Original     		PDF 2SK3018 100mA) OT-323 OT-23 2SK3018 SOT-23 5V GATE TO SOURCE VOLTAGE MOSFET MOSFET IGSS 100uA 2sk3018 package mosfet vgs 5v n-channel mosfet vgs 3v

    2SK3018

    Abstract: 3018G 2SK3018 UTC
    Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ DESCRIPTION The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is


    Original     		PDF UK3018 2SK3018 400mA UK3018G-AE2-R UK3018G-AL3-R OT-23-3 OT-323 QW-R502-313 3018G 2SK3018 UTC

    2SK3018

    Abstract: No abstract text available
    Text: UM6K1N Transistors 2.5V Drive Nch+Nch MOS FET UM6K1N zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm UMT6 2.0 0.9 1.3 0.65 0.65 0.7 (5) (4) (6) 1.25 2.1 1pin mark (3) (1) (2) 0.2 0.15 0.1Min. zFeatures 1) Two 2SK3018 transistors in a single UMT package.


    Original     		PDF 2SK3018 100mA)

    Untitled

    Abstract: No abstract text available
    Text: UM6K1N Transistors 2.5V Drive Nch+Nch MOS FET UM6K1N zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm UMT6 2.0 0.9 1.3 0.65 0.65 0.7 (5) (4) (6) 1.25 2.1 1pin mark (3) (1) (2) 0.2 0.1Min. zFeatures 1) Two 2SK3018 transistors in a single UMT package.


    Original     		PDF 2SK3018 100mA)

    k72 sot-23

    Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
    Text: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS


    Original     		PDF 2N7002DW OT-363 2N7002T 2SK3019 OT-523 2N7002KW 2N7002W 2SK3018 O-251 k72 sot-23 sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303

    rkm 33 transistor

    Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


    Original     		PDF IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A IMH11A IMH14A IMH15A rkm 33 transistor g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor

    2SK3018

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# UM6K1N Features • • • • • • • • Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1


    Original     		PDF 2SK3018 OT-363

    2SK3018

    Abstract: No abstract text available
    Text: US6J2 Transistors Small switching −20V, −1A US6J2 TUMT6 2.0±0.1 0.85MAX 0.77±0.05 (6) (5) (4) (1) (2) (3) 2.1±0.1 1.7±0.1 0.2 0.3 +0.1 −0.05 0~0.1 1pin mark !Applications Interfacing, switching (−20V, −1A) 0.2MAX !External dimensions (Unit : mm)


    Original     		PDF 85MAX 2SK3018

    rds035

    Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198
    Text: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW


    Original     		PDF RHU002N06 2SD2167 56to270 2SB1132 2SD1664 82to390 2SB1188 2SD1766 2SB1182 2SD1758 rds035 rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198

    2SK3018

    Abstract: No abstract text available
    Text: UM5K1N Transistors Small switching 30V, 0.1A UM5K1N !Equivalent circuit (4) (1) Tr1 Gate (2) Source (3) Tr2 Gate (4) Tr2 Drain (6) Tr1 Drain ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use.


    Original     		PDF SC-88A 2SK3018

    2sk3808

    Abstract: 2SK3807 2sk3805 2sk3806 Shortform Transistor Guide sp8m3 RSQ035P03 RTQ035P02 FET SP8M4 sp8m5
    Text: Transistors MOS FET 1. Can be used with automatic placement machines. Available in a wide variety of packages. Like bipolar transistors, taped MOS FETs are available for assembly lines using automatic placement equipment. 2. MOS FETs operating from 4 volts and 2.5 volts


    Original     		PDF RSS140N03 O-220FN 2SK2095N 2SK2713 2SK2299N 2SK2793 2SK2792 2SK2740 /products/shortform/21trstr/trstr1 2sk3808 2SK3807 2sk3805 2sk3806 Shortform Transistor Guide sp8m3 RSQ035P03 RTQ035P02 FET SP8M4 sp8m5

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# UM6K1N Features • • • • • • • Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1


    Original     		PDF 2SK3018 OT-363

    113 marking code transistor ROHM

    Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


    Original     		PDF

    2SK3018

    Abstract: T106
    Text: Transistor Small switching 30V, 0.1 A 2SK3018 Features External dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 1.3±0.1 3) Low voltage drive (2.5V) makes this 0.65 0.65 2 .0 ± 0.2 device ideal for portable equipment. 4) Easily designed drive circuits.


    OCR Scan     		PDF 2SK3018 100mA) SC-70 10//s, 2SK3018 T106