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    2SK285 Search Results

    2SK285 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2857C-T1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK2858-T1-A Renesas Electronics Corporation Power MOSFETs for Automotive, SSP, / Visit Renesas Electronics Corporation
    2SK2858(0)-T1-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK2857C(0)-T1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK2857-T1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    2SK285 Price and Stock

    Rochester Electronics LLC 2SK2858-T1-A

    MOSFET N-CH 30V 100MA SC70-3 SSP
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    DigiKey 2SK2858-T1-A Bulk 38,000 13,172
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    Rochester Electronics LLC 2SK2857-T1-AZ

    2SK2857-T1-AZ - N-CHANNEL MOSFET
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    DigiKey 2SK2857-T1-AZ Bulk 14,621 606
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    Rochester Electronics LLC 2SK2851TZ-E

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey 2SK2851TZ-E Bulk 339
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    Toshiba America Electronic Components 2SK2854(TE12L,F)

    RF MOSFET 10V PW-MINI
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    2SK2854(TE12L,F) Cut Tape 1
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    2SK2854(TE12L,F) Digi-Reel 1
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    Renesas Electronics Corporation 2SK2858(0)-T1-AT

    D73032F16V - POWER MOSFETS FOR AUTOMOTIVE - Bulk (Alt: 2SK2858(0)-T1-AT)
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    Avnet Americas 2SK2858(0)-T1-AT Bulk 4 Weeks 4,554
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    Rochester Electronics 2SK2858(0)-T1-AT 192,000 1
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    Find more 2SK285 price and stock on Findchips.com

    2SK285 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK285 Panasonic Transistor Selection Guide Scan PDF
    2SK2850 Fuji Electric N-Channel Enhancement Mode Power MOSFET Scan PDF
    2SK2850-01 Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK2850-01 Fuji Electric MOSFET / Power MOSFET Selection Guide Original PDF
    2SK2850-01 Fuji Electric N-Channel Enhancement Mode Power MOSFET Scan PDF
    2SK2850-1 Unknown POWER MOSFET Scan PDF
    2SK2851 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2851 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2851 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2854 Toshiba Silicon N-channel MOS type field effect transistor for UHF band switch applications Original PDF
    2SK2854 Toshiba 2SK2854 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, LEAD FREE, 2-5K1D, SC-62, 3 PIN, FET RF Small Signal Original PDF
    2SK2854 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK2854(TE12L,F) Toshiba RF FETs, Discrete Semiconductor Products, MOSFET RF N CH 10V 500MA Original PDF
    2SK2855 Toshiba Silicon N-channel MOS type field effect transistor for UHF band amplifier applications Original PDF
    2SK2855 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK2856 Toshiba Field Effect Transistor GaAs N Channel Single Gate Modulation Dope Type Scan PDF
    2SK2856 Toshiba N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
    2SK2857 Kexin N-Channel MOSFET Original PDF
    2SK2857 NEC N-Channel MOS Field Effect Transistor for High Speed Switching Original PDF
    2SK2857 NEC Semiconductor Selection Guide Original PDF

    2SK285 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 1.0 A Drain Power Dissipation


    Original     		PDF 2SK2855

    2SK2850-01

    Abstract: No abstract text available
    Text: 2SK2850-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK2850-01 SC-65 2SK2850-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK2850-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK2850-01

    2SK2858

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2858 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The 2SK2858 is a switching device which can be driven directly by a 2.1 ± 0.1 0.3 +0.1 –0 2.5-V power source.


    Original     		PDF 2SK2858 2SK2858 SC-70

    2SK2854

    Abstract: No abstract text available
    Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 0.5 A Drain Power Dissipation


    Original     		PDF 2SK2854 SC-62 849MHz 13d54 000707EAA2 2SK2854

    Untitled

    Abstract: No abstract text available
    Text: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


    Original     		PDF 2SK2855

    TOSHIBA Semiconductor Reliability Handbook

    Abstract: 2SK2855
    Text: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use


    Original     		PDF 2SK2855 TOSHIBA Semiconductor Reliability Handbook 2SK2855

    2SK2855

    Abstract: No abstract text available
    Text: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 1.0 A Drain Power Dissipation


    Original     		PDF 2SK2855 SC-62 849MHz 2SK2855

    D1164

    Abstract: 2SK2857 marking NX ic 451
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK2857 N チャネル MOS FET スイッチング用 2SK2857 は，4V 駆動タイプの N チャネル縦型 MOS FET で，5V 電源系 IC の出力による直接駆動が可能なスイッ


    Original     		PDF 2SK2857 2SK2857 D1164 marking NX ic 451

    2SK2851

    Abstract: Hitachi DSA00238
    Text: 2SK2851 Silicon N Channel MOS FET High Speed Power Switching ADE-208-478 1st. Edition Features • Low on-resistance R DS on = 0.055Ω typ. (at VGS = 10 V, I D = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A Outline TO-92MOD. D


    Original     		PDF 2SK2851 ADE-208-478 O-92MOD. 2SK2851 Hitachi DSA00238

    D1164

    Abstract: 2SK2857
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2857 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK2857 is a switching device which can be driven directly 4.5±0.1 by a 5V power source. The 2SK2857 features a low on-state resistance and excellent


    Original     		PDF 2SK2857 2SK2857 D1164

    smd marking NX

    Abstract: nx marking smd 2SK2857 MOSFET marking smd RG 265
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK2857 SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low On-state resistance : MAX. VGS = 10 V, ID = 2.5 A 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 0.80-0.1 MAX. (VGS = 4 V, ID = 1.5 A)


    Original     		PDF 2SK2857 OT-89 smd marking NX nx marking smd 2SK2857 MOSFET marking smd RG 265

    Untitled

    Abstract: No abstract text available
    Text: IC SMD Type Type SMD Product specification 2SK2857 SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low On-state resistance : MAX. VGS = 10 V, ID = 2.5 A 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 0.80-0.1 MAX. (VGS = 4 V, ID = 1.5 A)


    Original     		PDF 2SK2857 OT-89

    2SA2859

    Abstract: 2SA285
    Text: Ordering number:EN5851 N Channel Silicon MOSFET 2SK2859 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low On resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2149 [2SA2859] 5 4 1.8max 1 1.27 0.595 0.43 0.2 1 : No Contact


    Original     		PDF EN5851 2SK2859 2SA2859] 2SA2859 2SA285

    2sk2850

    Abstract: 2SK2850-01 16V8 2sk2850 DATASHEET 2sk2850 transistor NC010
    Text: 2SK2850-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK2850-01 2sk2850 2SK2850-01 16V8 2sk2850 DATASHEET 2sk2850 transistor NC010

    Untitled

    Abstract: No abstract text available
    Text: 2SK2851 Silicon N Channel MOS FET High Speed Power Switching REJ03G1036-0200 Previous: ADE-208-478 Rev.2.00 Sep.07,2005 Features • Low on-resistance RDS(on) = 0.055 Ω typ. (at VGS = 10 V, ID = 2.5 A) • 4 V gate drive devices. • Large current capacitance


    Original     		PDF 2SK2851 REJ03G1036-0200 ADE-208-478) PRSS0003DC-A

    transistor marking 7D

    Abstract: ED34 2SK2855 7d marking
    Text: TOSHIBA 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND AMPLIFIER APPLICATION SILICON N CHANNEL MOS TYPE 2SK2855 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Drain Power Dissipation Channel Temperature


    OCR Scan     		PDF 2SK2855 SC-62 849MHz f-849MHz 23dBmW transistor marking 7D ED34 2SK2855 7d marking

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND AMPLIFIER APPLICATION SILICON N CHANNEL MOS TYPE 2SK2854 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Drain Power Dissipation Channel Temperature


    OCR Scan     		PDF 2SK2854 849MHz 13dBmW 849MHzontained f-849M

    Untitled

    Abstract: No abstract text available
    Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK2858 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK2858 is a switching device which can be driven directly by a 2.1 ± 0.1 2.5-V power source. 1.25 ± 0.1


    OCR Scan     		PDF 2SK2858 2SK2858 SC-70 D11706EJ2V0DS00

    2SK2850

    Abstract: 2SK2850-01 SK2850 T0-247
    Text: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2850-01 : SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DR AW N CHECKED •I I II 1/ L-] -• ; I I.Scope This specifies Fuji Power MOSFET 2SK2850-01


    OCR Scan     		PDF 2SK2850-01 2SK2850 2SK2850-01 SK2850 T0-247

    2SK2856

    Abstract: transistor 4809
    Text: TOSHIBA 2SK2856 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2856 UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 0.7dB f=1.5GHz • High Gain : Ga = 21.5dB (f=1.5GHz) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SK2856 53Z14 2SK2856 transistor 4809

    2SK2856

    Abstract: pi1510
    Text: TOSHIBA 2SK2856 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2856 UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 0.7dB f=1.5GHz • High Gain : Ga = 21.5dB (f=1.5GHz) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SK2856 53Z14 2SK2856 pi1510

    UAA 1250

    Abstract: H1250
    Text: SPECIFICATION D EVICE NAME : Power MOSFET 2SK2850-01 TYPE NAME - SPEC. NO. : Fuji Electric Co.Ltd. This Specification is subject to change without notice. DA TE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED s' il i 1/ Mi h I.S co p e This specifies Fuji Power MOSFET 2SK2850-01


    OCR Scan     		PDF 2SK2850-01 2SK2850-01 UAA 1250 H1250

    nf 922

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2856 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2856 UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.7dB f=1.5GHz High Gain : Ga = 21.5dB (f= 1.5GHz) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SK2856 53Z14 --j250 nf 922