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    2SK275 Search Results

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    2SK275 Price and Stock

    Panasonic Electronic Components 2SK275100L

    JFET N-CH 10MA MINI3-G1
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    DigiKey 2SK275100L Digi-Reel 1
    • 1 $0.38
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    • 100 $0.38
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    2SK275100L Reel 3,000
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    • 10000 $0.10237
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    2SK275100L Cut Tape 1
    • 1 $0.38
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    Hitachi Ltd 2SK2752WV-TL

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2752WV-TL 2,400
    • 1 $3.6
    • 10 $3.6
    • 100 $3.6
    • 1000 $1.98
    • 10000 $1.8
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    Toshiba America Electronic Components 2SK2750

    SILICON N CHANNEL MOS TYPE (PI-MOSV) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 3.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA 2SK2750 30
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    2SK275 Datasheets (51)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK275 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK275 Unknown FET Data Book Scan PDF
    2SK2750 Toshiba FETs - Nch 500V Original PDF
    2SK2750 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2750 Toshiba Original PDF
    2SK2750 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2750 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK2750 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V) Scan PDF
    2SK2750 Toshiba Silicon N-channel MOS type field effect transistor for high speed, high current switching applications, chopper regulator,DC-DC converter and motor drive applications Scan PDF
    2SK2751 Panasonic TRANS JFET N-CH 0.0047A 3MINI3-G1 Original PDF
    2SK2751 Panasonic Silicon N-Channel Junction FET Original PDF
    2SK2751 Panasonic N-Channel Junction FET Original PDF
    2SK2751 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK2751 Panasonic Silicon N-Channel Junction FET Original PDF
    2SK275100L Panasonic JFETs (Junction Field Effect), Discrete Semiconductor Products, JFET N-CH 10MA 200MW MINI-3 Original PDF
    2SK2753-01 Fuji Electric N-channel MOS-FET Original PDF
    2SK2753-01 Fuji Electric TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,5A Scan PDF
    2SK2754-01L Fuji Electric MOSFET / Power MOSFET Selection Guide Original PDF
    2SK2754-01L Fuji Electric N-channel MOS-FET Original PDF
    2SK2754-01L Fuji Electric Power MOSFET Scan PDF

    2SK275 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK2758-01L,S N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    Original     		PDF 2SK2758-01L

    mosfet 300V 10A datasheet

    Abstract: No abstract text available
    Text: 2SK2757-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK2757-01 O-220AB mosfet 300V 10A datasheet

    2SK2756-01R

    Abstract: No abstract text available
    Text: 2SK2756-01R N-channel MOS-FET FAP-IIS Series 450V > Features - 0,45Ω 18A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -


    Original     		PDF 2SK2756-01R 2SK2756-01R

    2SK2757-01

    Abstract: No abstract text available
    Text: 2SK2757-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original     		PDF 2SK2757-01 2SK2757-01

    2sk2756 equivalent

    Abstract: No abstract text available
    Text: 2SK2756-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK2756-01R 2sk2756 equivalent

    Untitled

    Abstract: No abstract text available
    Text: 2SK2759-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK2759-01R

    Untitled

    Abstract: No abstract text available
    Text: 2SK2758-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings T-pack S T-pack (L) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		PDF 2SK2758-01L

    2SK2755-01

    Abstract: No abstract text available
    Text: 2SK2755-01 N-channel MOS-FET FAP-IIS Series 450V > Features - 0,45Ω 18A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -


    Original     		PDF 2SK2755-01 2SK2755-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK2757-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK2757-01 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For impedance conversion in low frequency For pyroelectric sensor • Package ■ Features


    Original     		PDF 2002/95/EC) 2SK2751

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For pyroelectric sensor 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 0.4±0.2


    Original     		PDF 2002/95/EC) 2SK2751

    Untitled

    Abstract: No abstract text available
    Text: 2SK2754-01L,S N-channel MOS-FET FAP-IIS Series 450V > Features - 0,65Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    Original     		PDF 2SK2754-01L

    Untitled

    Abstract: No abstract text available
    Text: 2SK2759-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings 15.5 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 Applications 3.2 +0.3 Switching regulators UPS Uninterruptible Power Supply DC-DC converters ±0.3 20 Min


    Original     		PDF 2SK2759-01R

    2SK2751

    Abstract: JISC7030
    Text: Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 1 0.95 3 +0.1 0.4 –0.05 +0.2 2.9 –0.05


    Original     		PDF 2SK2751 2SK2751 JISC7030

    "N-Channel JFET"

    Abstract: list of n channel fet Jfet n-channel JFET sot23 JFET application note 2SK2751 pyro
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET „ FEATURES * Low noise-figure NF . * High gate to drain voltage VGDO. „ APPLICATIONS * For impedance conversion in low frequency. * For pyroelectric sensor. *Pb-free plating product number:2SK2751L


    Original     		PDF 2SK2751 2SK2751L 2SK2751-AE3-R 2SK2751L-AE3-R 2SK2751-AL3-R 2SK2751L-AL3-R OT-23 OT-323 QW-R206-067 "N-Channel JFET" list of n channel fet Jfet n-channel JFET sot23 JFET application note 2SK2751 pyro

    2sk2774

    Abstract: TO220F15 2SK3271 2sk2251 to 220f15 TO-220F15 2sk1818 2sk2954 2SK2255 2sk2098
    Text: VDSS 100 to 250 volts Series Package Drain-source voltage VDSS Voltage 100 F-I series TO-3P F-II series T-Pack FAP-II series TO-220AB 120 150 200 250 2SK2753(50,0.032) 2SK2849(18,0.18) 2SK2519(10,0.4) 2SK2521(18,0.18) 2SK2520(10,0.4) 2SK2522(18,0.18) TO-220F15


    Original     		PDF O-220AB 2SK2753 2SK2849 2SK2519 2SK2521 2SK2520 2SK2522 O-220F15 2SK2250 2SK2292 2sk2774 TO220F15 2SK3271 2sk2251 to 220f15 TO-220F15 2sk1818 2sk2954 2SK2255 2sk2098

    2SK2759-01R

    Abstract: No abstract text available
    Text: 2SK2759-01R N-channel MOS-FET FAP-IIS Series 500V > Features - 0,55Ω 15A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -


    Original     		PDF 2SK2759-01R 2SK2759-01R

    2SK2755-01

    Abstract: No abstract text available
    Text: 2SK2755-01 N-channel MOS-FET FAP-IIS Series 450V > Features - 0,45Ω 18A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -


    Original     		PDF 2SK2755-01 2SK2755-01

    2SK2751

    Abstract: n-channel JFET sot23
    Text: UTC 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET FEATURES *Low noise-figure NF . *High gate to drain voltage VGDO. APPLICATIONS *For impedance conversion in low frequency. *For pyroelectric sensor. 1 2 MARKING SYMBOL 3 HS SOT-23 1: DRAIN 2: SOURCE 3: GATE


    Original     		PDF 2SK2751 OT-23 QW-R206-067 2SK2751 n-channel JFET sot23

    2SK2751

    Abstract: JISC7030
    Text: Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.65) ● Low noise-figure (NF) ● High gate to drain voltage VGDO


    Original     		PDF 2SK2751 2SK2751 JISC7030

    2SK2758-01L

    Abstract: 2U 73 diode
    Text: FU JI 2SK2758-01L,S N-channel MOS-FET FAP-IIS Series > Features - 50 0V 0 ,9 Q 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated T-RA.CK S


    OCR Scan     		PDF 2SK2758-01L 00047DS 2U 73 diode

    EFL 233

    Abstract: 2SK2757-01 n4570
    Text: F U JI ölüMeulßäUG 2SK2757-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0 ,9 Q 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated


    OCR Scan     		PDF 2SK2757-01 O-220AB EFL 233 n4570

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction For impedance conversion in low frequency For pyro-electric sensor 2 . 8 - 0.3 + 0.25 1 . 5 - 0.05 0.65±0.15 • Features Parameter Gate-Drain voltage Drain current Gate current


    OCR Scan     		PDF 2SK2751 O-236 SC-59 C7030,

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SK2750 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2750 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		PDF 2SK2750 100//A