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    2SK266 Search Results

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    2SK266 Price and Stock

    Toshiba America Electronic Components 2SK2662(Q)

    Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220NIS - Rail/Tube (Alt: 2SK2662(Q))
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    Avnet Americas 2SK2662(Q) Tube 50
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    Quest Components 2SK2662(Q) 21
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    2SK2662(Q) 7,281
    • 1 $1.655
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    Quest Components 2SK2662(Q,T) 1,121
    • 1 $1.655
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    • 100 $0.8275
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    Toshiba America Electronic Components 2SK2661

    SILICON N CHANNEL MOS TYPE (PI-MOSV) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    ComSIT USA 2SK2661 150
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    Shindengen Electronic Manufacturing Co Ltd 2SK2666

    900V 3A N-CHANNEL ENHANCEMENT TYPE POWER MOSFET Power Field-Effect Transistor, 3A I(D), 900V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SK2666 1,581
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    Sanken Electric Co Ltd 2SK2663

    900V 1A N-CHANNEL ENHANCEMENT TYPE POWER MOSFET Power Field-Effect Transistor, 1A I(D), 900V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SK2663 4,720
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    2SK266 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK266 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK266 Unknown FET Data Book Scan PDF
    2SK266 Toshiba Transistors / FETs Scan PDF
    2SK2660 Panasonic Silicon N-Channel Power F-MOS FET Original PDF
    2SK2660 Panasonic Silicon N-Channel Power F-MOS FET Scan PDF
    2SK2661 Toshiba SILICON N CHANNEL MOS TYPE, FIELD EFFECT TRANSISTO Original PDF
    2SK2661 Toshiba Original PDF
    2SK2661 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2661 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2661 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK2661 Toshiba Silicon N-channel MOS type field effect transistor for high speed, high current switching applications, chopper regulator,DC-DC converter and motor drive applications Scan PDF
    2SK2662 Toshiba N-Channel MOSFET Original PDF
    2SK2662 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2662 Toshiba Original PDF
    2SK2662 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2662 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK2662 Toshiba Silicon N channel field effect transistor for high speed, high voltage switching applications, DC-DC converter, relay drive and motor drive applications Scan PDF
    2SK2662(Q) Toshiba 2SK2662 - Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220NIS Original PDF
    2SK2662T Toshiba 2SK2662T - Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220NIS T/R Original PDF
    2SK2663 Shindengen Electric N-Channel Enhancement type Power MOSFET Original PDF

    2SK266 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2668

    Abstract: FP3W90HVX2
    Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2668 N-Channel Enhancement type OUTLINE DIMENSIONS FP3W90HVX2 Case : ITO-3P (Unit : mm) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


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    PDF 2SK2668 FP3W90HVX2 2SK2668 FP3W90HVX2

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2663 N-Channel Enhancement type OUTLINE DIMENSIONS F1E90HVX2 Case : E-pack (Unit : mm) 900V 1A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


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    PDF 2SK2663 F1E90HVX2

    2SK2660

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2660 Silicon N-Channel Power F-MOS FET • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● High-speed switching ● High drain-source voltage 6.5±0.1 5.3±0.1 4.35±0.1 Symbol Ratings Unit Drain to Source breakdown voltage VDSS


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    PDF 2SK2660 2SK2660

    2SK266

    Abstract: 2SK2664 F3V90HVX2
    Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2664 N-Channel Enhancement type OUTLINE DIMENSIONS F3V90HVX2 Case : TO-220 (Unit : mm) 900V 3A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


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    PDF 2SK2664 F3V90HVX2 O-220 2SK266 2SK2664 F3V90HVX2

    2SK2669

    Abstract: MOSFET 900V TO-220 F5V90HVX2
    Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2669 N-Channel Enhancement type OUTLINE DIMENSIONS F5V90HVX2 Case : TO-220 (Unit : mm) 900V 5A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


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    PDF 2SK2669 F5V90HVX2 O-220 100mJ 2SK2669 MOSFET 900V TO-220 F5V90HVX2

    2SK2665

    Abstract: F3S90HVX2
    Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2665 F3S90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


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    PDF 2SK2665 F3S90HVX2 STO-220 2SK2665 F3S90HVX2

    K2662

    Abstract: TRANSISTOR MAKING 2SK2662
    Text: 2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2662 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


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    PDF 2SK2662 K2662 TRANSISTOR MAKING 2SK2662

    2SK2668

    Abstract: FP3W90HVX2
    Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2668 N-Channel Enhancement type OUTLINE DIMENSIONS FP3W90HVX2 Case : ITO-3P (Unit : mm) 900V 3A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original
    PDF 2SK2668 FP3W90HVX2 2SK2668 FP3W90HVX2

    2SK2665

    Abstract: F3S90HVX2
    Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2665 F3S90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 900V 3A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


    Original
    PDF 2SK2665 F3S90HVX2 STO-220 2SK2665 F3S90HVX2

    K2661

    Abstract: 2SK2661 2-10P1B
    Text: 2SK2661 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2661 Chopper Regulator, DC–DC Converter and Motor Drive Applications z Low drain–source ON resistance : RDS (ON) = 1.35 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


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    PDF 2SK2661 K2661 2SK2661 2-10P1B

    Untitled

    Abstract: No abstract text available
    Text: 2SK758 Power F-MOS FETs 2SK2660 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● High-speed switching 6.5±0.1 ● High drain-source voltage (VDSS) 4.35±0.1 1.8±0.1 2.5±0.1 5.3±0.1 3.0±0.1 0.85±0.1 Parameter Symbol Rating Unit Drain-Source breakdown voltage


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    PDF 2SK758 2SK2660 SC-63

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2665 F3S90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 900V 3A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


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    PDF 2SK2665 F3S90HVX2 STO-220

    L67c

    Abstract: 2-10P1B 2SK2661
    Text: T O S H IB A 2SK2661 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2661 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance


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    PDF 2SK2661 L67c 2-10P1B 2SK2661

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2661 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV] 2SK2661 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE U nit in mm APPLICATIONS 10.3MAX. •


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    PDF 2SK2661 100/iA

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2662 DATA SILICON N CHANNEL MOS TYPE tt- M O S V (2SK2662) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS


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    PDF 2SK2662 2SK2662) 20kii) 2SK2662

    diode RT7

    Abstract: 2sk2661
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2661 SILICON N CHANNEL MOS TYPE tt- M O S V DATA (2SK2661) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE


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    PDF 2SK2661 2SK2661) 2SK2661 diode RT7

    2SK2674

    Abstract: No abstract text available
    Text: Power MOSFETs HVX-II series N-Channel, Enhancement type I, ^¿y E-pack SMD Surface Mount Cis3 (typ) R dS(ON) V dss Id Pt .i ' j . . .JA I. . 2SK2663 2SK2665 2SK2670 900 1 3 5 . m Tch V gss (max) . ivi . .L'ÌL . _


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    PDF STO-220 2SK2663 2SK2665 2SK2670 STO-220 Fig30-45-4 2SK2333 2SK2664 2SK2674

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFET E-pack SMD HVX- II series TO-220 STO-220 (SMD) ITO-3P FTO-220 N-Channel, Enhancement type Absolute Maximum Ratings Type No. 2SK2663 2664 2665 2666 2667 2668 2669 2670 2671 2672 2673 2674 2675 2676 2677 2333 Electrical Characteristics R d s (on )


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    PDF O-220 STO-220 FTO-220 T0220 STO-220 FTO-220 O-220

    K2662

    Abstract: 2SK2662
    Text: T O SH IB A 2SK2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 +0.3 • •


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    PDF 2SK2662 20kii) C2662 K2662 2SK2662

    Untitled

    Abstract: No abstract text available
    Text: H V X -ïïv U -X A 9 -M 0 SFET HVX-n SERIES POWER MOSFET N-fr-V m KM O U T L IN E D IM E N S IO N S Case : ITO-3P 2SK2668 n.2-°-2 FP3W90HVX2 900v 3a + % Date code oa 5.5±0-3 ÎS.O *« @ ¡" 5 9 ^ K2668 EIAJ No. " W 3.3±0-3 2.1MAX-H 2.1 MAX ± 0.2 l,Q±0-2


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    PDF 2SK2668 FP3W90HVX2) K2668 90HVX2)

    2SK2662

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 2.7± 0.2


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    PDF 2SK2662 2SK2662

    2SK2662

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Source ON Resistance : Rd S(O N )- 1.350 (Typ.)


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    PDF 2SK2662 2SK2662

    Untitled

    Abstract: No abstract text available
    Text: H V X - E v U - X M 9 -M 0 S F E T H V X -1 SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK2665 F3S 90H V X 2 900v 3a L e a d type is a vailab le. I Ë ftX R A TIN G S A b s o lu te Maxim um R a tin g s h m ie Item ~f~ A' -î' C h a n n e l T e m p e r a tu r e


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    PDF 2SK2665

    F3F90HVX2

    Abstract: 2SK2666 2sk2666 t
    Text: H V X -I Iv 'J -X M OSFET HVX-n SERIES POWER MOSFET • Wfê-SÜÉBI O U T L IN E D IM E N S IO N S 2SK2666 F3F90H VX 2 ■ R A TIN G S ■ A b s o lu te M axim um R a tin g s if Ite m g od Tn Sym bol S t o r a g e T e m p e ra tu r e -f- -y JU C h a n n e l T e m p e r a tu r e


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    PDF 2SK2666 F3F90H 10//S. F3F90HVX2) F3F90HVX2 2SK2666 2sk2666 t