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    Toshiba America Electronic Components 2SK2611

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    Bristol Electronics 2SK2611 276
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    Quest Components 2SK2611 706
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    Toshiba America Electronic Components 2SK2611(F)

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    Quest Components 2SK2611(F) 69
    • 1 $10.455
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    2SK2611 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK2611 Toshiba N-Channel MOSFET Original PDF
    2SK2611 Toshiba Original PDF
    2SK2611 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2611 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2611 Unknown Scan PDF
    2SK2611 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK2611 Toshiba Silicon N channel field effect transistor for high speed, high voltage switching applications, DC-DC converter, relay drive and motor drive applications Scan PDF
    2SK2611(F,T) Toshiba 2SK2611 - Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN Original PDF
    2SK2611FT Toshiba 2SK2611FT - Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN Original PDF
    2SK2611T Toshiba 2SK2611T - Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN Original PDF

    2SK2611 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k2611

    Abstract: toshiba transistor k2611 transistor k2611 toshiba k2611 K2611 equivalent equivalent transistor k2611 2SK2611 INFORMATION ON K2611 K2611 toshiba SC-65
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2611 k2611 toshiba transistor k2611 transistor k2611 toshiba k2611 K2611 equivalent equivalent transistor k2611 2SK2611 INFORMATION ON K2611 K2611 toshiba SC-65

    2SK2611

    Abstract: transistor 2sk2611 toshiba 2sk2611 SC-65
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2611 2SK2611 transistor 2sk2611 toshiba 2sk2611 SC-65

    K2611

    Abstract: toshiba transistor k2611 toshiba K2611 transistor k2611 K2611 toshiba k261 K2611 circuits 2sk2611 transistor transistor Toshiba K2611
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 1.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2611 K2611 toshiba transistor k2611 toshiba K2611 transistor k2611 K2611 toshiba k261 K2611 circuits 2sk2611 transistor transistor Toshiba K2611

    toshiba transistor k2611

    Abstract: K2611 toshiba K2611 transistor k2611 K2611 toshiba transistor Toshiba K2611 k2611 Transistor INFORMATION ON K2611 K261-1 k2611 a
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2611 toshiba transistor k2611 K2611 toshiba K2611 transistor k2611 K2611 toshiba transistor Toshiba K2611 k2611 Transistor INFORMATION ON K2611 K261-1 k2611 a

    2SK2611

    Abstract: transistor 2sk2611 2sk2611 transistor SC-65
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) l High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2611 15transportation 2SK2611 transistor 2sk2611 2sk2611 transistor SC-65

    K2611

    Abstract: transistor k2611 toshiba transistor k2611 toshiba K2611 K2611 toshiba INFORMATION ON K2611 K261-1 transistor Toshiba K2611 2SK2611 k2611 Transistor
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2611 K2611 transistor k2611 toshiba transistor k2611 toshiba K2611 K2611 toshiba INFORMATION ON K2611 K261-1 transistor Toshiba K2611 2SK2611 k2611 Transistor

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    MOSFET TOSHIBA 2SK2917

    Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
    Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6


    Original     		PDF DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    k2611

    Abstract: toshiba transistor k2611 toshiba k2611 transistor k2611 2SK2611 toshiba 2sk2611 K2611 toshiba SC-65
    Text: 2SK2611 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS tt-MOSIII INDUSTRIAL APPLICATIONS Unit in mm 1 5.9 M A X. Low Drain-Source ON Resistance : Rd S (O N )-1-1^ (Typ.)


    OCR Scan     		PDF 2SK2611 k2611 toshiba transistor k2611 toshiba k2611 transistor k2611 2SK2611 toshiba 2sk2611 K2611 toshiba SC-65

    2SK2611

    Abstract: diode co35
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL 2SK2611 DATA SILICON N CHANNEL MOS TYPE tt- MOS I I I (2SK2611) HIGH SPEED, HIGH VO LTA G E SW ITCHIN G APPLIC A TIO N S I N D U S T R IA L A P P L IC A T I O N S U n it in mm DC-DC CONVERTER, R ELA Y DRIVE A N D M O TO R DRIVE A PPLICATIO N S


    OCR Scan     		PDF 2SK2611 2SK2611) 100/zA 2SK2611 diode co35

    2sk2611

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2 S K2 611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		PDF 2SK2611 --720V) 2sk2611

    2Sk2611

    Abstract: transistor 2sk2611 TE5500 2sk2611 transistor
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2611 SILICON N CHANNEL MOS TYPE tt- M O S I I I DATA (2SK2611) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF 2SK2611 2SK2611) 20kil) 2SK2611 transistor 2sk2611 TE5500 2sk2611 transistor

    2SK2611

    Abstract: SC-65 toshiba 2sk2611
    Text: 2SK2611 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS U nit in mm 1 5.9 M A X. • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2611 SC-65 toshiba 2sk2611

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low D rain-Source O N Resistance


    OCR Scan     		PDF 2SK2611

    2sk2611 transistor

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SIII 2SK2611 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS U nit in mm DC-DC CONVERTER, RELAY DRIVE A N D M O TOR DRIVE APPLICATIONS 15.9MAX.


    OCR Scan     		PDF 2SK2611 20kil) 2sk2611 transistor

    2SK2611

    Abstract: LDR 24v LT 7207
    Text: Ì/'J Z ¡ > N ? r * 2SK2611 J U M O S E tt-M O S U I IÍÍKJ6U) o sa. iá « X * ffl O O í - n -7 ^ ffl • 151MW SlltO] * : R d S (O N )= l l H t W H ) I R t M é ü r \r‘ I 9 's A *«¡*¡v'a • *Hf2 : mm i l s - t . D C -D C = J> /< -? ffl : |Yfs|=7.0S<«*»)


    OCR Scan     		PDF 2SK2611 100//A( 00A//v8 2SK2611 LDR 24v LT 7207

    K2611

    Abstract: toshiba transistor k2611 toshiba k2611 transistor k2611 toshiba 2sk2611 20kO 2SK2611 K2611 toshiba SC-65
    Text: T O S H IB A 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS U n it in mm


    OCR Scan     		PDF 2SK2611 K2611 toshiba transistor k2611 toshiba k2611 transistor k2611 toshiba 2sk2611 20kO 2SK2611 K2611 toshiba SC-65