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    2SK2573 Search Results

    2SK2573 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2573 Panasonic TRANS MOSFET N-CH 500V 20A 3TOP-3E-A1 Original PDF
    2SK2573 Panasonic N-Channel Power F-MOS FET Original PDF
    2SK2573 Panasonic Silicon N-Channel Power F-MOS FET Original PDF
    2SK2573 Panasonic Silicon N-Channel Power F-MOS FET Scan PDF

    2SK2573 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2573 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm (2.0) ● Contactless relay ● Diving circuit for a solenoid


    Original
    PDF 2SK2573

    Untitled

    Abstract: No abstract text available
    Text: 2SK2574 Power F-MOS FETs 2SK2573 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed 10.0 2.0 1.2 secondary breakdown ● Solenoid relay 2.0 4.0 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 equipment ● Switching 5.5±0.3


    Original
    PDF 2SK2574 2SK2573

    2SK2573

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2573 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm (2.0) ● Contactless relay ● Diving circuit for a solenoid


    Original
    PDF 2SK2573 2SK2573

    2SK2573

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2573 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 10.0 VDSS 500 V Gate to Source voltage VGSS ±30


    Original
    PDF 2SK2573 2SK2573

    PD1001

    Abstract: 2SK2573
    Text: Power F-MOS FETs 2SK2573 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 10.0 VDSS 500 V Gate to Source voltage VGSS ±30


    Original
    PDF 2SK2573 PD1001 2SK2573

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    ON3105

    Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
    Text: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S


    Original
    PDF MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 ON3105 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013

    2SK2573

    Abstract: No abstract text available
    Text: Panasonic P o w er F -M O S FE T s 2SK2573 Tentative S ilic o n N - C h a n n e l P o w e r F - M O S • Features U nit : mm • Avalanche energy capability guaranteed • High-speed switching £ t • Low ON-resistance • No secondary breakdown 5X ■Applications


    OCR Scan
    PDF 2SK2573

    Untitled

    Abstract: No abstract text available
    Text: Panasonic P o w e r F -M O S F E T s 2SK2573 Tentative Silicon N-Channel Power F-MOS • Features Unit : mm • Avalanche energy capability guaranteed • High-speed switching • Low ON-resistance • No secondary breakdown 5X ■Applications • Non-contact relay


    OCR Scan
    PDF 2SK2573

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK2573 Tentative Silicon N-Channel Power F-MOS U nit : m m • Features • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown 5X ■Applications • • • • •


    OCR Scan
    PDF 2SK2573

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan
    PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202