Untitled
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK2571 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 2.0 ● Contactless relay ● Diving circuit for a solenoid
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2SK2571
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2SK2571
Abstract: td 1555 7a DIODE
Text: Power F-MOS FETs 2SK2571 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 15.5±0.5 10.0 4.5 VDSS 450 V Gate to Source voltage VGSS ±30
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2SK2571
2SK2571
td 1555
7a DIODE
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Untitled
Abstract: No abstract text available
Text: 2SK2572 Power F-MOS FETs 2SK2571 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed 10.0 2.0 1.2 secondary breakdown ● Solenoid relay 2.0 4.0 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 equipment ● Switching 5.5±0.3
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2SK2572
2SK2571
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2SK2571
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK2571 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 15.5±0.5 10.0 4.5 VDSS 450 V Gate to Source voltage VGSS ±30
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2SK2571
2SK2571
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2SK2571
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK2571 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 2.0 5° * Gate to Source voltage VGSS ±30 V DC ID ±13 A
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2SK2571
2SK2571
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SK2571
Abstract: No abstract text available
Text: Panasonic P o w e r F - M O S FETs 2SK2571 Tentative S ilic o n N - C h a n n e l P o w e r F - M O S • Features U n it : m m • Avalanche energy capability guaranteed • High-speed switching * • Low ON-resistance • No secondary breakdown ■Applications
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OCR Scan
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2SK2571
2SK2571
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Untitled
Abstract: No abstract text available
Text: Panasonic Power F-MOS FETs 2SK2571 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown t r ■Applications • • • • •
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OCR Scan
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2SK2571
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PDF
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2sk2324
Abstract: 2SK2124 2SK2127 2sk2323
Text: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22C)F(a) TO-220E (D55) (D59) 2SK1605 2SK2123 2SK1606 TOP-3(a) (D60) TOP-3E (D65) 2SK2125 2SK1608 2SK2126 2SK1609 2SK2127 R o S 'ù n ; Id (A) 2SK2032 2SK2571 500 2SK1610 2SK2383 550 2SK2047 max. ( ü )
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OCR Scan
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O-22C
O-220E
2SK1605
2SK1606
2SK2123
2SK2124
2SK1607
2SK2032
2SK2571
2SK2509
2sk2324
2SK2127
2sk2323
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7A SF
Abstract: No abstract text available
Text: Panasonic Power F-MOS FETs 2SK2571 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown t # ■Applications • • • • •
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OCR Scan
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2SK2571
7A SF
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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OCR Scan
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1020G
N12861
N12B62
MN1381
MN13811
MN13821
15P0802
15P5402
58851A
70803A
3866S
transistor a999
bs 7818 -1995
transistor tt 2206
A999 transistor
TT 2206 transistor
a1535A
8340UAS
transistor 3866S
2SD 4515
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k3025
Abstract: K3192 k3047 K2538 k2960 K2923 K3035 K3165 K3028 k2576
Text: GaAs MMIC Microwave Monolithic IC # For Amplifiers U /V CATV Wide Band Amp. Buffer Amp. Type No. NF (dB) PG (dB) Measuring Condition Circuit Configuration O .—. > ^ Application (mA) GN1010 2.0 9 3 25 100 to 2000 GN1042 2.2 10 3 40 50 to 800 GN1044 1.8
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OCR Scan
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GN1010
GN1042
GN1044
GN8061
GN8062
01076B
N01077N
01087B
01091B
01093B
k3025
K3192
k3047
K2538
k2960
K2923
K3035
K3165
K3028
k2576
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OF03
Abstract: 2SK1263 2SK2377
Text: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128
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OCR Scan
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A2SK2277
2SK2014
2SK2047
2SK1834
220Fro
2SK1980
A2SK2128
A2SK2125
2SK1833
2SK2509
OF03
2SK1263
2SK2377
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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OCR Scan
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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Untitled
Abstract: No abstract text available
Text: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22ÛF(a) (D55) TO-220E (D59) TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (067) V dss (V) V gss (V) 500 ±20 2SK1406 2SK2509 2SK1833 2SK2125 2SK1608 2SK2126 ton typ (ns) 150 140 480 15 0.5 8
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OCR Scan
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O-220E
2SK1406
A2SK2572
2SK1605
2SK1606
2SK2123
2SK2124
2SK1607
2SK2032
2SK2571
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