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    2SK2397 EQUIVALENT Search Results

    2SK2397 EQUIVALENT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation

    2SK2397 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power Diode 800V 5A

    Abstract: 2SK2397-01MR
    Text: 2SK2397-01MR N-channel MOS-FET FAP-II Series 800V > Features - 2,3Ω 5A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2397-01MR power Diode 800V 5A 2SK2397-01MR

    Untitled

    Abstract: No abstract text available
    Text: 2SK2397-01MR N-channel MOS-FET FAP-II Series 800V > Features - 2,3Ω 5A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2397-01MR

    DS800

    Abstract: 2SK2397-01MR
    Text: F U JI nuMEirijajG 2SK2397-01MR N-channel MOS-FET FAP-II Series 800V > Features - 2,3 a 5A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications


    OCR Scan     		PDF 2SK2397-01MR 20Ki2) DS800

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2397-01MR N-channel MOS-FET FAP-II Series > Features - 2,3H 80 0V 5A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    OCR Scan     		PDF 2SK2397-01MR