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    Toshiba America Electronic Components 2SK1792

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    2SK179 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1792 Toshiba Original PDF
    2SK1792 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1792 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1792 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1792 Unknown Scan PDF
    2SK1792 Unknown FET Data Book Scan PDF
    2SK1792 Toshiba Discrete Semiconductors Scan PDF
    2SK1792 Toshiba N-Channel Enhancement MOSFET Scan PDF
    2SK1793 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK1793 NEC Semiconductor Selection Guide Original PDF
    2SK1793 NEC Original PDF
    2SK1793 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1793 Unknown FET Data Book Scan PDF
    2SK1793 NEC MOS Field Effect Power Transistor Scan PDF
    2SK1793Z Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1793-Z Unknown FET Data Book Scan PDF
    2SK1793-Z NEC MOS Field Effect Power Transistor Scan PDF
    2SK1794 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK1794 NEC Semiconductor Selection Guide Original PDF
    2SK1794 NEC Original PDF

    2SK179 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


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    PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


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    PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


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    PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2sk2500

    Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1

    pa1476h

    Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH
    Text: CD-ROM版トランジスタ CD-ROM X13769XJ2V0CD00 08−1 トランジスタ パッケージ別早見表 • TO-92形トランジスタ V TO–92 CEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674


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    PDF X13769XJ2V0CD00 2SA1206* 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 pa1476h pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1792 Industrial Applications TO-22QFL Field Effect Transistor 2 Unit in mm Silicon N Channel MOSType L -ti-MOS IV 10.3 MAX 1 ,3 2 ^ - 5r " High Speed Switching, DC-DC Converter, Relay Drive, Motor Drive Applications Features


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    PDF 2SK1792 O-22QFL 100nA

    2SK1795

    Abstract: TC-2441
    Text: MOS FIELD EFFECT POWER TRANSISTOR 2SK1795 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1795 is N-channel M O S Field Effect Transistor designed for PACKAGE DIMENSIONS in m illim eters high voltage switching applications. 0 3 .0 ±0.2


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    PDF 2SK1795 2SK1795 IEI-1209) TC-2441

    2SK1795

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT POWER TRANSISTOR 2SK1795 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION


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    PDF 2SK1795 2SK1795 IEI-1209) MEI-1202 TEA-1035

    K1793

    Abstract: 2SK1793-Z 2SK1793 2SK17 MP-25 MP-25Z 1793 1793-Z 2SK1793Z diode p25
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR i 2 S K 1 7 9 3 , 1 7 9 3 -Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1793 is N-channel MOS Field Effect Transistor de­ PACKAGE DIMENSIONS in m illim eters signed for high voltage switching applications.


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    PDF 2SK1793, 2SK1793-Z 2SK1793 2SK1793 IEI-1209) K1793 2SK1793-Z 2SK17 MP-25 MP-25Z 1793 1793-Z 2SK1793Z diode p25

    2SK1792

    Abstract: irig b converter
    Text: TO SHIBA 2SK1792 Industrial Applications TQ-220FL Field Effect Transistor Unit in mm Silicon N Channel MOS Type L2-7t-MOS IV High Speed Switching, DC-DC Converter, Relay Drive, Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance


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    PDF 2SK1792 TQ-220FL 2SK1792 irig b converter

    2SK1794

    Abstract: 2SK1794 N
    Text: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1794 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2S K 1794 is N -channel M O S Field Effect T ran sisto r PACKAGE DIMENSIONS in m illim eters designed fo r high voltage switching applications.


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    PDF 2SK1794 2SK1794 IEI-1209) 2SK1794 N

    K1792

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1792 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOS]V 2 S K 1 792 HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. INDUSTRIAL APPLICATIONS TO-22QFL _ U nit in mm 10.3M AX.


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    PDF 2SK1792 O-22QFL K1792

    Untitled

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR À 2SK1796 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE


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    PDF 2SK1796

    2SK1792

    Abstract: k 2750 transistor
    Text: TOSHIBA Discrete Semiconductors 2SK1792 Field Effect Transistor Industrial Applications TQ-220FL Unit in mm Silicon N Channel M OSType l?-7t-MOS IV 10.3 M AX High Speed Switching, DC-DC Converter, Relay Drive, Motor Drive Applications Features • 4-Volt Gate Drive


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    PDF 2SK1792 100nA 2SK1792 k 2750 transistor

    2SK1796

    Abstract: MEI-1202 TEA-1035
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR À 2SK1796 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2S K 1796 is N -channel M O S Field Effect Tran sisto r PACKAGE DIMENSIONS in m illim eters designed fo r high voltage switching applications.


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    PDF 2SK1796 2SK1796 IEI-1209) MEI-1202 TEA-1035

    2SK1795

    Abstract: MEI-1202 TEA-1035
    Text: DATA SHEET i MOS FIELD EFFECT POWER TRANSISTOR 2SK1795 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The2S K 1795 is N-channel M O S Field Effect Transistor designed fo r PACKAGE DIMENSIONS in millimeters high voltage switching applications.


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    PDF 2SK1795 IEI-1209) MEI-1202 TEA-1035

    2SK1794

    Abstract: MEI-1202 TEA-1035
    Text: DATA SHEET NEC i MOS FIELD EFFECT POWER TRANSISTOR 2SK1794 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1794 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in millimeters designed for high voltage switching applications.


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    PDF 2SK1794 IEI-1209) MEI-1202 TEA-1035

    2SK1794

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98 .2 DATA SHEET NEC i MOS FIELD EFFECT POWER TRANSISTOR 2SK1794 SWITCHING N-CHANNEL POWER MOS FET


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    PDF 2SK1794 2SK1794 IEI-1209) MEI-1202 TEA-1035

    2SK1794

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1794 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE


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    PDF 2SK1794 2SK1794 IEI-1209) MEI-1202 TEA-1035

    2SK1793

    Abstract: 2SK1793-Z MP-25 MP-25Z TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET N E C ,T » * MOS FIELD EFFECT POWER TRANSISTOR 2SK1793, 1793-Z SWITCHING N-CHANNEL POWER MOS FET


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    PDF 2SK1793 1793-Z IEI-1209) 2SK1793-Z MP-25 MP-25Z TEA-1035

    PW110

    Abstract: PW-110 2SK1796 MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98 .2 DATA SHEET i MOS FIELD EFFECT POWER TRANSISTOR 2SK1796 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE


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    PDF 2SK1796 2SK1796 IEI-1209) PW110 PW-110 MEI-1202 TEA-1035

    2sj239

    Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
    Text: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]


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    PDF 2SK1112 2SK1719 2SJ239 2SK2030 2SK1079 TE12L) 2SK1078 2SJ238 2sj239 TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL

    2SK1796

    Abstract: 2SK1804 2SK1713 2SK1784 2SK1794 2SK1772 2SK1773 2SK1774 2SK1775 2SK1785
    Text: - 122 - f m £ tt ffl £ æ m i \ V * * K V js * m * Se 3 Vg s * X I* X P d /P c h (V) * * (A) a * (W) I gss (max) (A) Vg s (V) Ä (min) (max) Vd s (A) (V) (A) ft ft ä t ff) (max) V d s (V) (V) (V) (Ta=25tî) 1 Í S m (min) (S) Id (A) Vd s % ? (V) Id


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    PDF 2SK1772 2SK1773 2SK1774 2SK1775 2SK1784 30nstyp 2SK183S 25nstyp 2SK1834 105ns 2SK1796 2SK1804 2SK1713 2SK1794 2SK1785