Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK177 Search Results

    2SK177 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1775-E Renesas Electronics Corporation Nch Single Power Mosfet 900V 8A 1600Mohm To-3Pfm Visit Renesas Electronics Corporation
    2SK1773-E Renesas Electronics Corporation Switching N-Channel Power Mosfet, TO-3P, /Tube Visit Renesas Electronics Corporation
    2SK1772HYTR-E Renesas Electronics Corporation Switching N-Channel Power Mosfet, UPAK, /Embossed Tape Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SK177 Price and Stock

    Renesas Electronics Corporation 2SK1775-E

    MOSFET N-CH 900V 8A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1775-E Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Toshiba America Electronic Components 2SK1771(TE85L)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1771(TE85L) 836
    • 1 $1.63
    • 10 $1.63
    • 100 $0.815
    • 1000 $0.652
    • 10000 $0.652
    		Buy Now

    Renesas Electronics Corporation 2SK1772HYTR-E

    2SK1772 - Small Signal Field-Effect Transistor, 1A, 30V, N-Channel MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK1772HYTR-E 167 1
    • 1 $0.392
    • 10 $0.392
    • 100 $0.3685
    • 1000 $0.3332
    • 10000 $0.3332
    		Buy Now

    2SK177 Datasheets (60)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK1770 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1770 Unknown FET Data Book Scan PDF
    2SK1770 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1770 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1770 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1771 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK1771 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1771 Toshiba TRANS MOSFET N-CH 12.5V 0.03A 4(2-3J1D) Scan PDF
    2SK1771 Toshiba Field Effect Transistor Silicon N-Channel MOS Type Scan PDF
    2SK1771 Toshiba Silicon N channel field effect transistor for FM tuner and VHF RF amplifier applications Scan PDF
    2SK1772 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK1772 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1772 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK1772 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1772 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1772 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1772 Unknown FET Data Book Scan PDF
    2SK1772 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1772 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1772 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    2SK177 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK1771 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK1771 FM Tuner, VHF RF Amplifier Applications • Superior inter modulation performance. • Low noise figure: NF = 1.0dB typ. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SK1771

    Hitachi DSA002748

    Abstract: No abstract text available
    Text: 2SK1772 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive


    Original     		PDF 2SK1772 D-85622 Hitachi DSA002748

    2SK1342

    Abstract: 2SK1775
    Text: 2SK1775 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 1 2 3 1. Gate


    Original     		PDF 2SK1775 2SK1342 2SK1342 2SK1775

    2SK1772

    Abstract: Hitachi DSA00398
    Text: 2SK1772 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive


    Original     		PDF 2SK1772 2SK1772 Hitachi DSA00398

    Untitled

    Abstract: No abstract text available
    Text: 2SK1773 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1k V(BR)GSS (V)30 I(D) Max. (A)5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)15 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)


    Original     		PDF 2SK1773

    2SK1771

    Abstract: No abstract text available
    Text: 2SK1771 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK1771 FM Tuner, VHF RF Amplifier Applications • Superior inter modulation performance. • Low noise figure: NF = 1.0dB typ. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SK1771 2SK1771

    2SK1775-E

    Abstract: 2SK1775 PRSS0003ZA-A
    Text: 2SK1775 Silicon N Channel MOS FET REJ03G0973-0200 Previous: ADE-208-1320 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter


    Original     		PDF 2SK1775 REJ03G0973-0200 ADE-208-1320) PRSS0003ZA-A 2SK1775-E 2SK1775 PRSS0003ZA-A

    2SK1775 equivalent

    Abstract: 2SK1342 2SK1775 DSA003639
    Text: 2SK1775 Silicon N-Channel MOS FET ADE-208-1320 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter


    Original     		PDF 2SK1775 ADE-208-1320 2SK1775 equivalent 2SK1342 2SK1775 DSA003639

    2SK1772

    Abstract: No abstract text available
    Text: 2SK1772 Silicon N Channel MOS FET Application UPAK High speed power switching Features 3 Low on–resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. • Suitable for DC – DC converter, motor drive,


    Original     		PDF 2SK1772 2SK1772

    2SK1773

    Abstract: DSA003639
    Text: 2SK1773 Silicon N-Channel MOS FET ADE-208-1319 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter


    Original     		PDF 2SK1773 ADE-208-1319 2SK1773 DSA003639

    2SK1342

    Abstract: 2SK1775 Hitachi DSA00396
    Text: 2SK1775 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PFM D G 1 S 2


    Original     		PDF 2SK1775 2SK1342 2SK1775 Hitachi DSA00396

    2SK1771

    Abstract: No abstract text available
    Text: 2SK1771 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK1771 FM Tuner, VHF RF Amplifier Applications • Superior inter modulation performance. · Low noise figure: NF = 1.0dB typ. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		PDF 2SK1771 2SK1771

    Hitachi DSA00349

    Abstract: 2SK1773
    Text: 2SK1773 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3P D 1 G 2 S 3


    Original     		PDF 2SK1773 Hitachi DSA00349 2SK1773

    Hitachi DSA002779

    Abstract: No abstract text available
    Text: 2SK1773 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3P D 1 G 2 S 3


    Original     		PDF 2SK1773 D-85622 Hitachi DSA002779

    Untitled

    Abstract: No abstract text available
    Text: 2SK1775 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline


    OCR Scan     		PDF 2SK1775

    100C

    Abstract: 2SK1771 V782
    Text: 2SK1771 T O S H IB A TO SHIBA FIELD EFFECT TRANSISTOR SILICON N -C H AN N EL MOS TYPE 2 S K 1 7 71 Unit in mm FM TUNER, VHF RF AMPLIFIER APPLICATIONS. 2.9 • • Superior Inter Modulation Performance. Low Noise Figure. : NF = 1.0dB Typ. - 0.3 a 1 B ID 2


    OCR Scan     		PDF 2SK1771 100MHz, --10mA 100C 2SK1771 V782

    Untitled

    Abstract: No abstract text available
    Text: 2SK1772 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — can be driven from 5 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive


    OCR Scan     		PDF 2SK1772

    Untitled

    Abstract: No abstract text available
    Text: 2SK1773 Silicon N-Channel MOS FET HITACHI November 1996 A pplication High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline


    OCR Scan     		PDF 2SK1773

    transistor T600

    Abstract: 100C 2SK1771
    Text: TO SH IBA 2SK1771 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL MOS TYPE 2 S K 1 771 Unit in mm FM TUNER, VHF RF AMPLIFIER APPLICATIONS + 0.2 • • 2 .9 - 0 . 3 Superior Inter Modulation Performance. Low Noise Figure : NF = 1.0dB Typ. 1 a MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SK1771 transistor T600 100C 2SK1771

    2SK1774

    Abstract: 2SK68 2SK684 Hitachi Scans-001
    Text: HM^bsas 001334=1 3 m h « h i t m 2SK1774 HITACHI/ OPTOELECTRONICS blE D Silicon N Channel MOS FET Application High speed power switching TO-3P*FM Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown


    OCR Scan     		PDF 2SK1774 001354e! 2SK684 D013SS1 2SK1774 2SK68 Hitachi Scans-001

    Untitled

    Abstract: No abstract text available
    Text: SILICON N CHANNEL MOS TYPE O 2SK1771 Unit in mm FM TUNER, VHF RF AMPLIFIER APPLICATIONS. o n+ 0-« 2 . 9 - 0.3 • Superior Inter Modulation Performance. • Low Noise Figure. r~ B 1 : NF = 1.0db TYP. 2 1 K ' 0'* 1 - 5 - 0.1 5* *ir ÎT M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SK1771 100MHz

    100C

    Abstract: 2SK1771
    Text: 2SK1771 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL MOS TYPE 2 S K 1 771 Unit in mm FM TUNER, VHF RF AM PLIFIER APPLICATIONS • • + 0.2 2.9-0.3 Superior Inter Modulation Performance. Low Noise Figure : NF = 1.0dB Typ. 1 a B l M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SK1771 100MHz, --10mA 100C 2SK1771

    I342

    Abstract: I342 G
    Text: 2SK1775 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulalor. DC-DC converter Outline TO-3PFM D


    OCR Scan     		PDF 2SK1775 I342 I342 G

    Untitled

    Abstract: No abstract text available
    Text: 44^505 2SK1774 0D13541 344 • H I T M HITACHI/ OPTOELECTRONICS blE D Silicon N Channel MOS FET Application High speed power switching TO-3P*FM Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC


    OCR Scan     		PDF 0D13541 2SK1774 2SK684 0Q13SS1