2SK13 Search Results

2SK13 Result Highlights (5)

Part	Manufacturer	Description
2SK1335L-E	Renesas Electronics Corporation	Nch Single Power Mosfet 200V 3A Mohm DPAK(L)
2SK1316STR-E	Renesas Electronics Corporation	Silicon N Channel MOSFET
2SK1335STL-E	Renesas Electronics Corporation	Nch Single Power Mosfet 200V 3A Mohm DPAK(S)/To-252
2SK1340-E	Renesas Electronics Corporation	Nch Single Power Mosfet 900V 5A 4000Mohm To-3P
2SK1329-E	Renesas Electronics Corporation	Silicon N Channel MOSFET

2SK13 Price and Stock

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Renesas Electronics Corporation 2SK1317-E MOSFET N-CH 1500V 2.5A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK1317-E	Tube	4,544		1	1 $6.13 10 $6.13 100 $3.944 1000 $3.944 10000 $3.944	Buy Now
Avnet Americas	2SK1317-E	Tube		18 Weeks	330	1 $4.206 10 $4.206 100 $4.206 1000 $4.206 10000 $4.206	Buy Now
Mouser Electronics	2SK1317-E		87,992			1 $6.59 10 $5.21 100 $3.79 1000 $3.79 10000 $3.79	Buy Now
Newark	2SK1317-E	Bulk	5		1	1 $6.38 10 $5.62 100 $4.1 1000 $4.1 10000 $4.1	Buy Now
TME	2SK1317-E				1	1 $6.11 10 $5.36 100 $4.26 1000 $4.26 10000 $4.26	Get Quote

Avnet Asia	2SK1317-E			18 Weeks	390	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	2SK1317-E			20 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	2SK1317-E		31,350		1	1 - 10 - 100 $5.59 1000 $5.59 10000 $5.59	Buy Now
Renesas Electronics America	2SK1317-E	Tube	4,544		1	1 $6.13 10 $6.13 100 $3.944 1000 $3.944 10000 $3.944	Buy Now
Win Source Electronics	2SK1317-E		39,200			1 - 10 - 100 $2.5047 1000 $2.4045 10000 $2.4045	Buy Now
Renesas Electronics Corporation 2SK1339-E MOSFET N-CH 900V 3A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK1339-E	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Silica	2SK1339-E			28 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation 2SK1342-E MOSFET N-CH 900V 8A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK1342-E	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Asia	2SK1342-E			18 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation 2SK1341-E MOSFET N-CH 900V 6A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK1341-E	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components 2SK137400L MOSFET N-CH 50V 50MA SMINI3-G1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK137400L	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 2SK13 price and stock on Findchips.com

2SK13 Datasheets (500)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK13	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SK13	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK13	Unknown	FET Data Book	Scan	PDF
2SK13	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2SK13	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK13	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SK13	National Semiconductor	Shortform National Semiconductor Datasheet	Short Form	PDF
2SK130	Unknown	FET Data Book	Scan	PDF
2SK1300	Hitachi Semiconductor	Silicon N-Channel MOS FET	Original	PDF
2SK1300	Hitachi Semiconductor	Silicon N Channel MOS FET	Original	PDF
2SK1300	Hitachi Semiconductor	Mosfet Guide	Original	PDF
2SK1300	Renesas Technology	Silicon N Channel MOS FET	Original	PDF
2SK1300	Renesas Technology	Silicon N-Channel MOS FET	Original	PDF
2SK1300	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF

2SK1300	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK1300	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK1300	Unknown	FET Data Book	Scan	PDF
2SK1300-E	Renesas Technology	Silicon N Channel MOS FET	Original	PDF
2SK1301	Hitachi Semiconductor	Silicon N-Channel MOS FET	Original	PDF
2SK1301	Hitachi Semiconductor	Silicon N Channel MOS FET	Original	PDF

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2SK13 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SK1336 Silicon N Channel MOS FET REJ03G0933-0200 Previous: ADE-208-1273 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source	Original	2SK1336 REJ03G0933-0200 ADE-208-1273) PRSS0003ZA-A	PDF
k1365 Abstract: 2SK1365 Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 4.0 S (typ.)	Original	2SK1365 k1365 2SK1365	PDF
k1359 Abstract: K135 2SK1359 Text: 2SK1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1359 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	2SK1359 k1359 K135 2SK1359	PDF
2SK1374 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK1374 Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 3 M Di ain sc te on na tin nc ue e/ d 5˚ • High-speed switching	Original	2002/95/EC) 2SK1374 2SK1374	PDF
2SK1303 Abstract: No abstract text available Text: 2SK1303 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,	Original	2SK1303 2SK1303	PDF
2SK1307 Abstract: 2SK1302 Text: 2SK1307 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive	Original	2SK1307 220FM 2SK1307 2SK1302	PDF
ECG 1277 Abstract: 2SK1340 DSA003639 Text: 2SK1340 Silicon N-Channel MOS FET ADE-208-1277 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter	Original	2SK1340 ADE-208-1277 ECG 1277 2SK1340 DSA003639	PDF
2SK1317 Abstract: DSA003638 Text: 2SK1317 Silicon N-Channel MOS FET ADE-208-1268 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver	Original	2SK1317 ADE-208-1268 2SK1317 DSA003638	PDF
2SK1304 Abstract: DSA003638 RA1010 Text: 2SK1304 Silicon N-Channel MOS FET ADE-208-1262 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive	Original	2SK1304 ADE-208-1262 2SK1304 DSA003638 RA1010	PDF
2SK1341 Abstract: DSA003639 Text: 2SK1341 Silicon N-Channel MOS FET ADE-208-1278 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter	Original	2SK1341 ADE-208-1278 2SK1341 DSA003639	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA 2SK1359 Field Effect Transistor U nit in m m Silicon N Channel MOS Type tc-MOS 11.5 15.9MAX High Speed, High Current DC-DC Converter, 032±O2 & Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance cJ " Rds(ON) = 3-OQ (Typ.)	OCR Scan	2SK1359	PDF
2SK1357 Abstract: 2Sk1357 transistor Text: 2SK1357 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jt-MOS h -5 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. 1 5.9 MAX. *3.2±0 2 FEATURES: • Low Drain-Source ON Resistance : RDS(0N)=2.5Q (Typ.) •High Forward Transfer Admittance : I Y f s ! = 2. 0S( Typ. )	OCR Scan	2SK1357 300/uA 10jKS 2SK1357 2Sk1357 transistor	PDF
800v nmos Abstract: No abstract text available Text: TOSHIBA 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type n-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - Rds(on ) = 1 (Typ.) • High Forward Transfer Admittance - Yfs' = 4. OS (Typ.)	OCR Scan	2SK1365 800v nmos	PDF
2SK1380 Abstract: No abstract text available Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSm 2SK1380 H I GH S P E E D , H I G H CURRENT SWI TCHING A P P L I C A T I O N S . INDUSTRIAL APPLICATIONS R E L A Y D R I V E , M O T O R D RI VE AND DC-DC C ONV ER T ER A P P L I C A T I O N S .	OCR Scan	2SK1380 2SK1380	PDF

2SK1377 Abstract: 10R1B Text: 2SK1377 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E tt-MOS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 1Û3MAX. 0 1 2 ± d 2 /- FEATURES:	OCR Scan	2SK1377 2SK1377 10R1B	PDF
2SK1346 Abstract: No abstract text available Text: FIELD EFFECT TRANSISTOR 2SK1346 SILICON N CHANNEL MOS TYPE tt-MOSH INDUSTRIAL APPLICATIONS HIGH SPEED,HIGH CURRENT SWITCHING APPL1CAÍI0NS. Unit in ma CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES: • Low Drain-Source ON Resistance :	OCR Scan	2SK1346 040ft 10tfs 00A/us 2SK1346	PDF
2SK1333 Abstract: No abstract text available Text: FIELD EFFECT TRANSISTO R 2SK1333 SILICON N CHANNEL MOS TYPE w-MOSii HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVER, OC-DC CONVERTER ANS SWITCHING REGURATOR APPLICATIONS. • Low Drain-Source ON Resistance : RDS(ON)=0,i,n (Max.) ID=15A • With Built-in Free Wheeling Diode:	OCR Scan	2SK1333 2SK1333	PDF
2SK1362 Abstract: ifr 220 Text: TOSHIBA Discrete Semiconductors 2SK1362 Field Effect Transistor Silicon N Channel MOSType rc-MOS II High Speed, High Current Switching Applications Features • High Breakdown Voltage ' V (BR)DSS - 9 0 0 V • High Forward Transfer Admittance - \|Yfsl= 1.7S(Typ.)	OCR Scan	2SK1362 00Elbl3 ifr 220	PDF
2SK1385-01 Abstract: n mosfet 1400 v Text: 2SK1385-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S lOutline Drawings • Features • High speed sw itching • Lo w on-resistance • No second ary breakdow n • Lo w driving p o w er • High voltage • V GSs = ± 3 0 V G uarantee	OCR Scan	2SK1385-01 A2-191 n mosfet 1400 v	PDF
2SK1331 Abstract: No abstract text available Text: P o w er F-MOS FET 2SK1331 2SK1331 Silicon N-Channel Power F-M O S FET Package Dimensions • Features • Low R r d <o„ = 0 .3 8 ii typ.) Unit: mm 5.2max. . 15.5max. 6.9min. • High speed sw itching t f= 100ns (typ.) • Secondary breakdow n free 3.2	OCR Scan	2SK1331 100ns b132fi52 Q017174 2SK1331	PDF
Untitled Abstract: No abstract text available Text: 2SK1334 Silicon N-Channel MOS FET HITACHI Nov. 1 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary Breakdown • Suitable for switching regulator and DC-DC converter Outline	OCR Scan	2SK1334	PDF
Untitled Abstract: No abstract text available Text: 2SK1335 L , 2SK1335(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter	OCR Scan	2SK1335 2SK1335Ã	PDF
K1302 Abstract: No abstract text available Text: 2SK1302 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive	OCR Scan	2SK1302 K1302	PDF
Untitled Abstract: No abstract text available Text: 2SK1336 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive	OCR Scan	2SK1336	PDF

2SK13 Search Results

2SK13 Result Highlights (5)

2SK13 Price and Stock

Renesas Electronics Corporation 2SK1317-E

Renesas Electronics Corporation 2SK1339-E

Renesas Electronics Corporation 2SK1342-E

Renesas Electronics Corporation 2SK1341-E

Panasonic Electronic Components 2SK137400L

2SK13 Datasheets (500)

2SK13 Datasheets Context Search

Untitled

k1365

k1359

2SK1374

2SK1303

2SK1307

ECG 1277

2SK1317

2SK1304

2SK1341

Untitled

2SK1357

800v nmos

2SK1380

2SK1377

2SK1346

2SK1333

2SK1362

2SK1385-01

2SK1331

Untitled

Untitled

K1302

Untitled