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    2SK1105 Search Results

    2SK1105 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1105 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1105 Collmer Semiconductor MOSFET Selection Guide Scan PDF
    2SK1105R Fuji Electric TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,5A Scan PDF
    2SK1105-R Fuji Electric N-Channel Silicon Power MOSFET Scan PDF

    2SK1105 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK1045

    Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
    Text: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100


    Original     		2SC642A O-204AA/TO-3: 2SC643 2N4030DIE 2C4030 2SC643A 2SK1045 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373 PDF

    2SK2079-01M

    Abstract: 2SK2079 2SK2001-01M 2SK1549 2SK900 2SK901 2SK902 2SK905 2SK906 2SK947M
    Text: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45


    OCR Scan     		2SK905 2SK906 2SK900 T0220 2SK947M T0220F15 2SK901 2SK1549 T03PF 2SK902 2SK2079-01M 2SK2079 2SK2001-01M PDF

    K1105

    Abstract: No abstract text available
    Text: 2SK1105-R FUJI P O W E R M O S-FE T N-CHANNEL SILICON POWER MOS-FET F - I S E R I E S • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators


    OCR Scan     		2SK1105-R GaTg30 K1105 PDF

    2SK2079

    Abstract: 2SK2079-01M
    Text: S MOSFETs F-l Series Low Rds (ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Maximum Ratinas Id (A) V dss (V) Pd (W)


    OCR Scan     		2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK2079 2SK2079-01M PDF

    2SK725

    Abstract: 2sk899 2SK960 90-340 K949 2SK900 2SK903MR k902 k952 2SK1549R
    Text: <S MOSFETs F-l Series - Low R d s ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK9Ò2 2SK949MR 2SK950 2SK724 2SK725 2SK899 2SK897MR 2SK903MR 2SK904 2SK1105R 2SK1663L.S 2ÔK1384R 2SK955 2SK960MR 2SK961 Miaximum Ratifias V dss (V)


    OCR Scan     		2SK905 2SK906 2SK900 T0-220 2SK947MR T0-220F15 2SK901 2SK1549R K949MR O-220F15 2SK725 2sk899 2SK960 90-340 K949 2SK903MR k902 k952 PDF

    sk1212

    Abstract: 2SK1549R 2SK724 2SK900 2SK901 2SK905 2SK906 2SK947MR 2SK950
    Text: <S MOSFETs F-l Series - Low R d s ON 50 - 800 Volts Miiximum Ralinas Device Type V dss (V) 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1540ft 2ÔK902 2SK949MR 2SK950 2SK724 2SK725 2SK899 2SK897MR 2SK903MR 2SK904 2SK1105R 2SK1663L.S 2ÔK1384R 2'3K055 2SK960MR


    OCR Scan     		2SK905 2SK906 2SK900 T0-220 2SK947MR T0-220F15 2SK901 2SK1549R K949MR O-220F15 sk1212 2SK724 2SK950 PDF

    2Sk955

    Abstract: 2SK725 K949 2sk899 2SK960 EE35 2SK903-MR 2SK900 2SK903MR 2SK901
    Text: MOSFETs F-l Series - Low R d s ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R ¿Sk902 2ÔK949MR 2SK950 2SK724 2SK725 2SK899 2SK897MR 2SK903MR 2SK904 2SK1105R 2SK1663L.S 2SK1384R 2SK955 2SK960MR 2SK961 Mi iximum Ratinas P d (W)


    OCR Scan     		2SK905 2SK906 2SK900 T0-220 2SK947MR O-220F15 2SK901 2SK1549R Sk902 K949MR 2Sk955 2SK725 K949 2sk899 2SK960 EE35 2SK903-MR 2SK903MR PDF

    2sk2079

    Abstract: 2SK2079-01M 2SK2001
    Text: MOSFETs F-l Series Low R d S ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miìximum Ratinas V d s s (V) Id (A) 45


    OCR Scan     		2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2sk2079 2SK2079-01M 2SK2001 PDF

    2sk2079

    Abstract: 2SK955 2SK2079-01M 2SK727-01 2SK727 2SK899 2SK961 2SK900 2SK1549 2SK901
    Text: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45


    OCR Scan     		2SK905 2SK906 2SK900 T0220 2SK947M T0220F15 2SK901 2SK1549 T03PF 2SK902 2sk2079 2SK955 2SK2079-01M 2SK727-01 2SK727 2SK899 2SK961 PDF

    1105R

    Abstract: 2SK1105-R TFMt 2SK1105 2sk mosfet
    Text: 2SK1105-R FUJI POWER MOS-FET N-C HANNEL SILICON POWER MOS-FET F -I S E R I E S lOutline Drawings • Features • High speed switching • Low on-resistance • N o secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators


    OCR Scan     		2SK1105-R 1105R 2SK1105-R TFMt 2SK1105 2sk mosfet PDF

    2SK1171

    Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
    Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn


    OCR Scan     		001SS7 25-35kg 2SK1171 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151 PDF

    2SK100

    Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:


    OCR Scan     		T0-220 T0-220F15 2SJ472-01L 2SJ314-01L 2SJ473-01L 2SK2248-01L 2SK1942-01 2SK2770-01 2SK2528-01 2SK1944-01 2SK100 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182 PDF

    2SK056

    Abstract: No abstract text available
    Text: MOSFETs F-l Series - Low Rds ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947M R 2SK901 i;-: tJdiruAin RSBr V dss (V ) MA) P d (W ) Qss(pt) Coss(pf) ton (ns) toff (ns) 50 100 250 250 250 45 32 12 12 20 125 125 80 40 125 0.03 0.06 0.30 0.30 0.15 3000


    OCR Scan     		2SK905 2SK906 2SK900 2SK947M 2SK901 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK056 PDF

    2sk1005

    Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
    Text: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn


    OCR Scan     		001SS7 CT03P t-39-13 2MI50F-050 2MI50S-050 2MI100F-025 2MI100F-050 2MI200F-025 6MI15FS-050 6MI20FS-025 2sk1005 T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101 PDF

    ET412

    Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
    Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646


    OCR Scan     		2SB1532 2SC3821 2SC3822 2SC3865 2SC3886 2SC4383 2SC4507 2SC4508 2SD1726 2SD1740 ET412 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082 PDF

    2SK1212

    Abstract: 2sk904 replacement
    Text: <5 MOSFETs F-l Series - Low R d s ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK902 2SK949MR 2SK950 2SK724 *2SK725 2SK899 2SK897MR '2SK903MR *2SK904 •2SK1105R *2SK1663L,S •2SK1384R •2SK955 2SK960MR 2SK961 Maximum Ratinas


    OCR Scan     		2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK902 2SK949MR 2SK950 2SK724 2SK1212 2sk904 replacement PDF

    2SK1143

    Abstract: 2SK1142 2SK1117 2SK1139 2SK1121 2SK1138 2SK1118 2SK1136 2sk1114 2SK1105
    Text: r. . . . m *t £ £ m ÌÈ Í Í t H ^ fë aË 2 P d /P c h «1 £ Hf m f* V * 2SKU05 -M tn m SW-Reg, UPS, DDC MOS N E 800 DSS 2SK1108 NEC C-MIC, Imp-C J N D 20 DSX 2SK1109 NEC (V) » * ±20 S (A) & 3 D (W) lass (max) (A) 80 ±100n 10m G 100m fà % (min) (max) Vds


    OCR Scan     		2SK1105 2SK1108 2SK1109 2SKU12 2SK1113 170ns. 550nstyp VDD-30V 2SK1134 155ns, 2SK1143 2SK1142 2SK1117 2SK1139 2SK1121 2SK1138 2SK1118 2SK1136 2sk1114 2SK1105 PDF

    T03P

    Abstract: 2SK101
    Text: COLLNER SE MICONDUCTOR INC b3E D • 22307^2 00D1A70 b05 « C O L <§ MOSFETs F-l Series Low R d s ON 50-900 Volts Device TvDe 2SK1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1549 2SK902 2SK901A 2SK902A 2SK949M 2SK950 2SK723


    OCR Scan     		00D1A70 2SK1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 T03P 2SK101 PDF

    2SK956

    Abstract: 2sk1005 2SK947 2SK1015 2SK948 436s 2SK906A 0 280 130 055 2SK726 2SK900
    Text: COLLMER S E M I C O N D U C T O R INC SEBûT'iS ÜÜD1S 7Ô 153 4ñE » MOSFETS ICOL <§ 13 F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099


    OCR Scan     		D1S70 2SK905 2SK1134 T03PF 2SK905A 2SK906 2SK906A 2SK900 T0220 2SK947 2SK956 2sk1005 2SK1015 2SK948 436s 0 280 130 055 2SK726 PDF

    2SK726

    Abstract: 2SK955 2SK956 2sk94 2SK727 2SK906A 2SK1004 2SK902A 2SK900 2sk1018
    Text: COLLMER S E M I C O N D U C T O R INC SEBûT'iS ÜÜD1S 7Ô 153 4ñE » MOSFETS ICOL <§ 13 F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099


    OCR Scan     		D1S70 2SK905 2SK1134 T03PF 2SK905A 2SK906 2SK906A 2SK900 T0220 2SK947 2SK726 2SK955 2SK956 2sk94 2SK727 2SK1004 2SK902A 2sk1018 PDF

    523a1

    Abstract: 2SK955 2SK956-01 equivalent 2SK956 2sk1018 2sk956 equivalent 2sk1144 2SK1388 2sk725 equivalent 2SK900
    Text: COLLMER SEMICONDUCTOR INC 34E S53Û7T2 » Ü001SS7 1 ICOL "T'3P\- 3 PUI1 [lU.IM sO’OSOE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on VGS + /- 30V Reduced turn off time High avalanced ruggedness VGS + /- 30V, Reduced turn off time


    OCR Scan     		001SS7 25-35kg 523a1 2SK955 2SK956-01 equivalent 2SK956 2sk1018 2sk956 equivalent 2sk1144 2SK1388 2sk725 equivalent 2SK900 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,


    OCR Scan     		2SK2770-01 2SK2272-01R 2SK2528-01 2SK1212-01R 2SK1944-01 2SK2653-01R 2SK727-01 2SK1217-01R 2SK1082-01 2SK2655-01R PDF

    k1507

    Abstract: K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05
    Text: FUJI G l T L t lC s ï r i jg û E C O L LH ER SEMICONDUCTOR INC MAE D • 5 5 3 6 7 ^ 5 0 Q 0 1 Ô 0 2 DbM « C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn


    OCR Scan     		T0220F15 K1663 k1507 K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05 PDF