Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK1084 Search Results

    2SK1084 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1084 Collmer Semiconductor F-II, FAP, F-III, F-V Series Modules Scan PDF
    2SK1084 Collmer Semiconductor MOSFET Scan PDF
    2SK1084 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1084 Fuji Electric MOSFETs Scan PDF
    2SK1084 Unknown FET Data Book Scan PDF
    2SK1084 Unknown Scan PDF

    2SK1084 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T0220F

    Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
    Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)


    OCR Scan     		PDF 2SK1082 2SK962 2SK1217 T03PF 2SK1512 2SK1511 2SK1008-01 T0220 2SK1010-01 T0220F T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390

    2SK1171

    Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
    Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn


    OCR Scan     		PDF 001SS7 25-35kg 2SK1171 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151

    2sk1005

    Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
    Text: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn


    OCR Scan     		PDF 001SS7 CT03P t-39-13 2MI50F-050 2MI50S-050 2MI100F-025 2MI100F-050 2MI200F-025 6MI15FS-050 6MI20FS-025 2sk1005 T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101

    2SK962

    Abstract: T03P 2MI200F-025
    Text: COLLHER SEMICONDUCTOR INC 22367^2 OOGIS?^ OTT « C O L 4ÔE » MOSFETS <§ F-ll SERIES toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 Ratings lo (A) Vdss(V) 900 900 900 900 1000 Characteristics (Tc=25°C) Sis(S)


    OCR Scan     		PDF 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 T03PF 2SK1008-01 2SK1010-01 2SK1012-01 2SK1014-01 T03P 2MI200F-025

    90T03P

    Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
    Text: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn


    OCR Scan     		PDF FAP-11 T03PF 2SK957-01 T0220F 2SK958-01 T0220 2SK959-01 2SK1548-01 2SK1024-01 90T03P 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors

    2SK1073

    Abstract: lm815 2SK1074 LM8002 2SK1078 2SK1079 2SK1082 2SK1092 2SK1084 2SK1100
    Text: m s tí: % m & m iS H f V j Hi A K V * * 2S K 1 0 6 9 H # LF A J N D -4 0 G D S BÍL LF/HF A J N D -2 2 G D O 2SK1074 S M 2SK1078 2SK1079 të S P d/Pc h 2SK1070 2SK1073 £ 1 9} * (V) - 22 0 & (A) * (W) I gss (max) (A) Vg s (V) (min) (A) % (max) V d s (A)


    OCR Scan     		PDF 2sk1069 2sk1070 2sk1073 2SK1074 2sk1078 130nstyp 2SK1096 120nstyp VDD-30V 2SK1097 2SK1073 lm815 LM8002 2SK1078 2SK1079 2SK1082 2SK1092 2SK1084 2SK1100

    523a1

    Abstract: 2SK955 2SK956-01 equivalent 2SK956 2sk1018 2sk956 equivalent 2sk1144 2SK1388 2sk725 equivalent 2SK900
    Text: COLLMER SEMICONDUCTOR INC 34E S53Û7T2 » Ü001SS7 1 ICOL "T'3P\- 3 PUI1 [lU.IM sO’OSOE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on VGS + /- 30V Reduced turn off time High avalanced ruggedness VGS + /- 30V, Reduced turn off time


    OCR Scan     		PDF 001SS7 25-35kg 523a1 2SK955 2SK956-01 equivalent 2SK956 2sk1018 2sk956 equivalent 2sk1144 2SK1388 2sk725 equivalent 2SK900

    k1507

    Abstract: K1507 MOSFET 90T03P 2SK1081 2SK1276 2SK1821 2SK1388 2SK1661 90.T03P 2SK1084
    Text: FUJI [ITLilC&irOgDE COLLHER SEMICONDUCTOR INC MAE » 55367^5 GGQ1Ô02 DbM • C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn off time Logic level operation, low


    OCR Scan     		PDF T03PF 2SK1081 2SK956-01 2SK1385-01 2SK957-01 T0220F 2SK958-01 T0220 2SK959-01 2SK1548-01 k1507 K1507 MOSFET 90T03P 2SK1276 2SK1821 2SK1388 2SK1661 90.T03P 2SK1084

    2SK1969-01

    Abstract: No abstract text available
    Text: COLLMER SEMICONDUCTOR INC b3E ]> • 22307^2 G001Ô72 4êfi « C O L <§ MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low RdS ON , High Avalanche Ruggedness, Integrated G-SSurge Protection, 60 Volts Device Type 2SK1822-01M 2SK1823-01 2SK1969-01


    OCR Scan     		PDF 2SK1822-01M 2SK1823-01 2SK1969-01 T0220F15 T03PF 2SK1505M 2SK2048 2SK1388 2SK1083M 2SK1096M

    2SK1217

    Abstract: 2SK962 2SK1512 MOSFET Modules 2SK1008-01 2SK1010-01 2SK1012-01 2SK1082 2SK1511 2SK1171
    Text: COLLHER SEMICONDUCTOR INC 22307^2 ODGISTT OTT « C O L MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)


    OCR Scan     		PDF 2SK1082 2SK962 2SK1217 T03PF 2SK1512 2SK1511 2SK1008-01 T0220 2SK1010-01 MOSFET Modules 2SK1012-01 2SK1171

    2SK1082

    Abstract: T0220F 2SK1512 T0-220F 2SK1018-01 2SK1084 2SK1388 2SK1217 2SK1090 2SK1276
    Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss 0 0 900 900 900 900 1000 C h aracteristics (Tc=25°C)


    OCR Scan     		PDF 2SK1082 2SK962 2SK1217 T03PF 2SK1512 2SK1511 2SK1008-01 T0220 2SK1010-01 T0220F T0-220F 2SK1018-01 2SK1084 2SK1388 2SK1090 2SK1276

    k1507

    Abstract: K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05
    Text: FUJI G l T L t lC s ï r i jg û E C O L LH ER SEMICONDUCTOR INC MAE D • 5 5 3 6 7 ^ 5 0 Q 0 1 Ô 0 2 DbM « C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn


    OCR Scan     		PDF T0220F15 K1663 k1507 K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05

    2SK1661

    Abstract: 2SK727 2sk1084 2SK1090 2SK1024 2sk1021 2SK1385 2SK1821
    Text: FUJI [ITLilC&irOgDE COLLHER SEMI CONDUCTOR INC MAE » 55367^5 GGQ1Ô02 DbM • C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn off time Logic level operation, low


    OCR Scan     		PDF T03PF 2SK1661 2SK727 2sk1084 2SK1090 2SK1024 2sk1021 2SK1385 2SK1821