Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SJ55 Search Results

    2SJ55 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ551L-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -18A 65Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation
    2SJ552L-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -20A 55Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation
    2SJ550STL-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -15A 95Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    2SJ554-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -45A 37Mohm To-3P Visit Renesas Electronics Corporation
    2SJ553L-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -30A 37Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SJ55 Price and Stock

    Renesas Electronics Corporation 2SJ550S-E

    TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SJ550S-E Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Rochester Electronics LLC 2SJ559-T1-A

    MOSFET P-CH 30V 100MA SC75-3 USM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SJ559-T1-A Bulk 1,892
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.16
    		Buy Now

    Rochester Electronics LLC 2SJ557-T1B-A

    SMALL SIGNAL P-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SJ557-T1B-A Bulk 541
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.55
    • 10000 $0.55
    		Buy Now

    Rochester Electronics LLC 2SJ559(0)-T1-A

    SMALL SIGNAL P-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SJ559(0)-T1-A Bulk 1,623
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.18
    		Buy Now

    Rochester Electronics LLC 2SJ557(0)T1B-AT

    SMALL SIGNAL P-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SJ557(0)T1B-AT Bulk 592
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.51
    • 10000 $0.51
    		Buy Now
    Find more 2SJ55 price and stock on Findchips.com

    2SJ55 Datasheets (92)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ55 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SJ55 Hitachi Semiconductor Silicon P-Channel MOS FET, Low Freq. Power Amplifier Scan PDF
    2SJ55 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SJ55 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ55 Unknown FET Data Book Scan PDF
    2SJ55 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SJ55 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SJ55 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ55 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SJ550 Hitachi Semiconductor Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ550 Renesas Technology FET Transistor, Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ550 Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ550(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SJ550(L) Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ550L Renesas Technology FET Transistor, Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ550L Renesas Technology Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ550L Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ550L-E Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ550(L)-(S) Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ550(L)/(S) Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF

    2SJ55 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ555

    Abstract: Hitachi 2SJ DSA003643
    Text: 2SJ555 Silicon P Channel MOS FET High Speed Power Switching ADE-208-634A Z 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–3P D G 1 S


    Original     		PDF 2SJ555 ADE-208-634A 2SJ555 Hitachi 2SJ DSA003643

    2SJ557

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 3 1.5 • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)


    Original     		PDF 2SJ557 2SJ557

    Hitachi 2SJ

    Abstract: Hitachi DSA002757
    Text: 2SJ551 L , 2SJ551(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-647B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 2SJ551(L),2SJ551(S)


    Original     		PDF 2SJ551 ADE-208-647B Hitachi 2SJ Hitachi DSA002757

    Hitachi DSA002757

    Abstract: No abstract text available
    Text: 2SJ555 Silicon P Channel MOS FET High Speed Power Switching ADE-208-634A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–3P D G 1 S 2


    Original     		PDF 2SJ555 ADE-208-634A D-85622 Hitachi DSA002757

    D1380

    Abstract: 2SJ559
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is


    Original     		PDF 2SJ559 2SJ559 D1380

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm FEATURES 0.4 +0.1 –0.05 +0.1 0.65–0.15 0.16+0.1 –0.06 3 1.5 2.8±0.2 The 2SJ557A is a switching device which can be driven directly


    Original     		PDF 2SJ557A 2SJ557A 95ntrol

    2SJ550

    Abstract: Hitachi 2SJ Hitachi DSA00315
    Text: 2SJ550 L , 2SJ550(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-633A (Z) 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK


    Original     		PDF 2SJ550 ADE-208-633A Hitachi 2SJ Hitachi DSA00315

    2SJ559

    Abstract: SC-75
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SJ559 is a switching device which can be driven directly by a 0.3 +0.1 –0 2.5 V power source. 0.15 +0.1


    Original     		PDF 2SJ559 2SJ559 SC-75 SC-75

    2SJ553

    Abstract: 2SJ553L-E PRSS0004AE-A
    Text: 2SJ553 L , 2SJ553(S) Silicon P Channel MOS FET REJ03G0900-0400 (Previous: ADE-208-650B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices.


    Original     		PDF 2SJ553 REJ03G0900-0400 ADE-208-650B) PRSS0004AE-A PRSS0004AE-B 2SJ553L-E PRSS0004AE-A

    2SJ551

    Abstract: 2SJ551L-E PRSS0004AE-A
    Text: 2SJ551 L , 2SJ551(S) Silicon P Channel MOS FET REJ03G0898-0400 (Previous: ADE-208-647B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices.


    Original     		PDF 2SJ551 REJ03G0898-0400 ADE-208-647B) PRSS0004AE-A PRSS0004AE-B 2SJ551L-E PRSS0004AE-A

    2SJ557A

    Abstract: marking xs
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm FEATURES 0.4 +0.1 –0.05 +0.1 0.65–0.15 1.5 0 to 0.1 1 • 4 V drive available • Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −1.0 A)


    Original     		PDF 2SJ557A SC-96) 2SJ557A marking xs

    651b

    Abstract: 2SJ552 Hitachi DSA00236
    Text: 2SJ552 L ,2SJ552(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-651B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK


    Original     		PDF 2SJ552 ADE-208-651B 651b Hitachi DSA00236

    2SJ554

    Abstract: Hitachi 2SJ DSA003643
    Text: 2SJ554 Silicon P Channel MOS FET High Speed Power Switching ADE-208-628B Z 3rd. Edition Jun. 1998 Features • Low on-resistance R DS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–3P D G 1 S


    Original     		PDF 2SJ554 ADE-208-628B 2SJ554 Hitachi 2SJ DSA003643

    Hitachi 2SJ

    Abstract: Hitachi DSA002757
    Text: 2SJ553 L , 2SJ553(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-650B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 2SJ553(L),2SJ553(S)


    Original     		PDF 2SJ553 ADE-208-650B Hitachi 2SJ Hitachi DSA002757

    2SJ550

    Abstract: 2SJ550L-E PRSS0004AE-A
    Text: 2SJ550 L , 2SJ550(S) Silicon P Channel MOS FET REJ03G0897-0300 (Previous: ADE-208-633A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices.


    Original     		PDF 2SJ550 REJ03G0897-0300 ADE-208-633A) PRSS0004AE-A PRSS0004AE-B 2SJ550L-E PRSS0004AE-A

    651b

    Abstract: 2SJ552 2SJ552L-E PRSS0004AE-A 2SJ552STL 2SJ552L
    Text: 2SJ552 L , 2SJ552(S) Silicon P Channel MOS FET REJ03G0899-0400 (Previous: ADE-208-651B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.042 Ω typ. • Low drive current. • 4 V gate drive devices.


    Original     		PDF 2SJ552 REJ03G0899-0400 ADE-208-651B) PRSS0004AE-A PRSS0004AE-B 651b 2SJ552L-E PRSS0004AE-A 2SJ552STL 2SJ552L

    2SJ557

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.4 +0.1 –0.05 • Can be driven by a 4 V power source • Low on-state resistance


    Original     		PDF 2SJ557 2SJ557

    Hitachi 2SJ

    Abstract: Hitachi DSA002757
    Text: 2SJ550 L , 2SJ550(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-633A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 2SJ550(L),2SJ550(S)


    Original     		PDF 2SJ550 ADE-208-633A Hitachi 2SJ Hitachi DSA002757

    Hitachi DSA002751

    Abstract: ear 3000
    Text: 2SJ552 L , 2SJ552(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-651B (Z) 3rd. Edition June 1, 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline


    Original     		PDF 2SJ552 ADE-208-651B D-85622 Hitachi DSA002751 ear 3000

    2SJ555

    Abstract: Hitachi 2SJ Hitachi DSA00395
    Text: 2SJ555 Silicon P Channel MOS FET High Speed Power Switching ADE-208-634A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–3P D G 1 S 2


    Original     		PDF 2SJ555 ADE-208-634A 2SJ555 Hitachi 2SJ Hitachi DSA00395

    2SJ555

    Abstract: 2SJ555-E PRSS0004ZE-A SC-65
    Text: 2SJ555 Silicon P Channel MOS FET REJ03G0902-0300 Previous: ADE-208-634A Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.017 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.


    Original     		PDF 2SJ555 REJ03G0902-0300 ADE-208-634A) PRSS0004ZE-A 2SJ555 2SJ555-E PRSS0004ZE-A SC-65

    HITACHI 2SJ56

    Abstract: 2SJ56 2SJ56 2sk176 2Sk176 HITACHI 2SJ56 HITACHI 2SJ55 2Sj55 HITACHI 2SK176 2Sk175 HITACHI Hitachi 2sk176 2sj56
    Text: blE D • 4MTbEDS DGlEfi^fl 2SJ55,2SJ56 &Z3 MHIT4 HITACHI/ OPTOELECTRONICS SILICON P-CHANNEL MOS FET LOW FREQU EN CY POWER AMPLIFIER Complementary Pair with 2SK175, 2SK176 ■ FEATURES • High Power Gain. • • Excellent Frequency Response. High Speed Switching.


    OCR Scan     		PDF 2SJ55 2SJ56 2SK175, 2SK176 HITACHI 2SJ56 2SJ56 2SJ56 2sk176 2Sk176 HITACHI 2SJ56 HITACHI 2Sj55 HITACHI 2SK176 2Sk175 HITACHI Hitachi 2sk176 2sj56

    2SJ56 2sk176

    Abstract: HITACHI 2SJ56 2SJ56 2SK176 2Sk175 HITACHI 2SK175 DIODE T25 4 lo 2SJ55 2Sk176 HITACHI 2SJ56 HITACHI
    Text: blE D • MMTbEOS DDlEflTfl ATT ■ H I T M 7 ^ 3 * ? 2SJ55,2SJ56~ &2 S H I T A C H I / O P T O E L E C T R O N I C S SILICON P-CHANNEL MOS F ET LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK175, 2SK176 ■ FEATURES • High Power Gain. • Excellent Frequency Response.


    OCR Scan     		PDF 2SK175, 2SK176 2SJ55 2SJ56 441b205 2SJ56 2sk176 HITACHI 2SJ56 2SJ56 2SK176 2Sk175 HITACHI 2SK175 DIODE T25 4 lo 2Sk176 HITACHI 2SJ56 HITACHI

    2SK176

    Abstract: 2Sk176 HITACHI 2Sk175 HITACHI HITACHI 2Sk176 2SJ56 2sk176 2SK175 2SJ56 HITACHI 2SJ56 2SJ56 HITACHI Hitachi 2sk176 2sj56
    Text: ' bl E D • 4 4 cJb2DS dOlBOH ñ ü l IHIT4 2SK17S,2SK176 HITACHI/* OPTOELECTRONICS SILICON N-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ55, 2SJ56 ■ FEATURES • High Power Gain. • • Excellent Frequency Response. High Speed Switching.


    OCR Scan     		PDF 44cJb2DS 2SJ55, 2SJ56 2SK175 2SK176 Q013D13 -2SK175 2SK176 2Sk176 HITACHI 2Sk175 HITACHI HITACHI 2Sk176 2SJ56 2sk176 2SJ56 HITACHI 2SJ56 2SJ56 HITACHI Hitachi 2sk176 2sj56