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    2SJ527S Search Results

    2SJ527S Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ527STR-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -5A 400Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
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    2SJ527S Price and Stock

    Renesas Electronics Corporation 2SJ527STR-E

    Silicon P Channel MOS FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SJ527STR-E 2,985 31
    • 1 -
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    • 100 $0.765
    • 1000 $0.6338
    • 10000 $0.5912
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    Quest Components 2SJ527STR-E 1,525
    • 1 $2.315
    • 10 $2.315
    • 100 $2.315
    • 1000 $0.8103
    • 10000 $0.8103
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    Chip1Stop 2SJ527STR-E Cut Tape 2,985
    • 1 $1.72
    • 10 $0.843
    • 100 $0.625
    • 1000 $0.518
    • 10000 $0.483
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    2SJ527S Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ527(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SJ527S Hitachi Semiconductor Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ527S Kexin P-Channel MOSFET Original PDF
    2SJ527(S) Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ527S Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ527S Renesas Technology FET Transistor, Silicon P Channel MOS FET High Speed Power Switching Original PDF

    2SJ527S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ527S

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type Hight Speed Power Switching 2SJ527S TO-252 Features Low on-resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 typ. 4V gate drive devices. 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 High speed switching


    Original     		PDF 2SJ527S O-252 2SJ527S

    2SJ527

    Abstract: 2SJ527L-E 2SJ527STL-E PRSS0004ZD-A PRSS0004ZD-C
    Text: 2SJ527 L , 2SJ527(S) Silicon P Channel MOS FET REJ03G0877-0300 (Previous: ADE-208-640A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.3 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching


    Original     		PDF 2SJ527 REJ03G0877-0300 ADE-208-640A) PRSS0004ZD-A PRSS0004ZD-C 2SJ527L-E 2SJ527STL-E PRSS0004ZD-A PRSS0004ZD-C

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    2SJ527

    Abstract: 2SJ527L-E 2SJ527STL-E PRSS0004ZD-A PRSS0004ZD-C
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF