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    2SJ507 Search Results

    2SJ507 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ507 Toshiba TRANS MOSFET P-CH 60V 1A 3(2-5J1C) Original PDF
    2SJ507 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SJ507 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ507 Toshiba Original PDF
    2SJ507 Toshiba Silicon P-channel MOS type field effect transistor for high speed, high current switching, chopper regulator, DC-DC converter, motor drive applications Scan PDF
    2SJ507 Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (LL-pi-MOSV) Scan PDF

    2SJ507 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SJ507

    Abstract: No abstract text available
    Text: 2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ507 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) l High forward transfer admittance


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    2SJ507 2SJ507 PDF

    2SJ507

    Abstract: No abstract text available
    Text: 2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ507 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance


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    2SJ507 2SJ507 PDF

    2SJ507

    Abstract: No abstract text available
    Text: 2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ507 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) z High forward transfer admittance


    Original
    2SJ507 2SJ507 PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    2SJ507

    Abstract: J507 as58
    Text: 2SJ507 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅤ 2SJ507 ○ リレー駆動DC−DC コンバータ用 単位: mm z 4V 駆動品です。 : RDS (ON) = 0.5Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 1.0S (標準)


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    2SJ507 O-92MOD 2002/95/EC) 2SJ507 J507 as58 PDF

    2SJ507

    Abstract: No abstract text available
    Text: 2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ507 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance


    Original
    2SJ507 2SJ507 PDF

    2SJ507

    Abstract: J507
    Text: 2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ507 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) z High forward transfer admittance


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    2SJ507 2SJ507 J507 PDF

    2SJ507

    Abstract: J507 transistor free
    Text: 2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ507 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) z High forward transfer admittance


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    2SJ507 2SJ507 J507 transistor free PDF

    J507

    Abstract: 2SJ507
    Text: 2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ507 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance


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    2SJ507 J507 2SJ507 PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


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    BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


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    BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


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    2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718 PDF

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


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    BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 PDF

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


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    BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent PDF

    2SJ507

    Abstract: Toshiba 2SJ Transistor
    Text: TO SHIBA 2SJ507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt- M O S V 2SJ 507 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 5.1 M AX.


    OCR Scan
    2SJ507 75MAX. --10V, 2SJ507 Toshiba 2SJ Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-7r-M O SV 2 SJ 50 7 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source On Resistance


    OCR Scan
    2SJ507 100/xA PDF

    2sj50

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ507 2 SJ 50 7 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-7r-M O SV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source On Resistance : Rd s (o N) = 0-5H (Typ.)


    OCR Scan
    2SJ507 --100/i --60V) --10V, 2sj50 PDF

    2SJ507

    Abstract: No abstract text available
    Text: TO SH IBA 2SJ507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ507 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Souree On Resistance : Rd S (ON) - 0.5 O (Typ.)


    OCR Scan
    2SJ507 2SJ507 PDF

    2SJ507

    Abstract: TO-92MOD
    Text: TOSHIBA 2SJ507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ507 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Souree On Resistance : Rd S (O N )-0.50 (Typ.)


    OCR Scan
    2SJ507 10jus VDD--48V, 2SJ507 TO-92MOD PDF