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    2SJ49 Search Results

    2SJ49 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ496TZ-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -5A 160Mohm To-92 Mod Visit Renesas Electronics Corporation
    2SJ495-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SJ494-AZ Renesas Electronics Corporation Switching P-Channel Power MOSFET Visit Renesas Electronics Corporation
    2SJ493-AZ Renesas Electronics Corporation Switching P-Channel Power MOSFET, MP-45F, /Bag Visit Renesas Electronics Corporation
    2SJ495-S12-AZ Renesas Electronics Corporation Power MOSFETs for Automotive, MP-45F, / Visit Renesas Electronics Corporation
    2SJ492-Z-E1-AZ Renesas Electronics Corporation Switching P-Channel Power MOSFET Visit Renesas Electronics Corporation
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    2SJ49 Price and Stock

    Rochester Electronics LLC 2SJ499-TL-E

    PCH 4V DRIVE SERIES
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    Rochester Electronics LLC 2SJ495-S12-AZ

    P-CHANNEL POWER MOSFET
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    onsemi 2SJ499-TL-E

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    Rochester Electronics 2SJ499-TL-E 4,200 1
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    Renesas Electronics Corporation 2SJ495-S12-AZ

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    Rochester Electronics 2SJ495-S12-AZ 989 1
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    Renesas Electronics Corporation 2SJ492-AZ

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    Rochester Electronics 2SJ492-AZ 7 1
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    2SJ49 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SJ49 Hitachi Semiconductor LOW FREQUENCY POWER AMPLIFIER Scan PDF
    2SJ49 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SJ49 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SJ49 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ49 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SJ49 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SJ49 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ49 Unknown Scan PDF
    2SJ49 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SJ49 Unknown FET Data Book Scan PDF
    2SJ490 Shindengen Electric Power MOSFET Selection Guide Original PDF
    2SJ490 Shindengen Electric Power MOS FET Scan PDF
    2SJ491 Shindengen Electric Power MOSFET Selection Guide Original PDF
    2SJ491 Shindengen Electric Power MOS FET Scan PDF
    2SJ492 Kexin P-Channel MOSFET Original PDF
    2SJ492 NEC SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SJ492 NEC Semiconductor Selection Guide Original PDF
    2SJ492-S NEC SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SJ492-ZJ NEC SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SJ493 NEC SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF

    2SJ49 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ493

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ493 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is P-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SJ493 Isolated TO-220 designed for high current switching applications.


    Original     		PDF 2SJ493 O-220 2SJ493

    mosfet 2SJ499

    Abstract: 2SJ499
    Text: Ordering number : ENN6589 2SJ499 P-Channel Silicon MOSFET 2SJ499 Load Switching Applications Features Low ON-state resistance. 4V drive. unit : mm 2083B [2SJ499] 2.3 0.5 5.5 7.0 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source


    Original     		PDF ENN6589 2SJ499 2083B 2SJ499] 2092B mosfet 2SJ499 2SJ499

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SJ496 R07DS0433EJ0400 Previous: REJ03G0870-0300 Rev.4.00 Jun 07, 2011 Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices.


    Original     		PDF 2SJ496 R07DS0433EJ0400 REJ03G0870-0300) PRSS0003DC-A

    PC1094C

    Abstract: tea 1020 2SJ494 1094g 682 FET TEI-603 MEB-504 TEA 0298 MOS 4011
    Text: データ・シート MOS形電界効果パワートランジスタ MOS Field Effect Power Transistors 2SJ494 ＰチャネルパワーMOS FET スイッチング用 工業用 本製品はＰチャネル縦型パワーMOS FETで，スイッチング特性が優れており，各種アクチュエータ駆動回路やスイ


    Original     		PDF 2SJ494 O-220MP-45F 108-0171NEC 46017NEC 54024NEC PC1094C tea 1020 2SJ494 1094g 682 FET TEI-603 MEB-504 TEA 0298 MOS 4011

    2SJ493

    Abstract: pc1094 tea 1020
    Text: データ・シート MOS形電界効果パワートランジスタ MOS Field Effect Power Transistors 2SJ493 PチャネルパワーMOS FET スイッチング用 工業用 本製品はＰチャネル縦型パワーMOS FETで，オン抵抗特性が優れており，各種アクチュエータ駆動回路やスイッチ


    Original     		PDF 2SJ493 O-220MP-45F PW10s, 108-0171NEC 46017NEC 54024NEC 2SJ493 pc1094 tea 1020

    2SJ492

    Abstract: 2SJ492-S 2SJ492-ZJ MP-25
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ492 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES ORDERING INFORMATION • Low on-state resistance


    Original     		PDF 2SJ492 O-220AB MP-25) 2SJ492-S O-262 MP-25 2SJ492-ZJ O-220SMD MP-25ZJ) 2SJ492 2SJ492-S 2SJ492-ZJ

    C11892E

    Abstract: 2SJ495 TEA-1035 A3856 m30 tf 125
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor in millimeter designed for high current switching applications. 10.0 ± 0.3


    Original     		PDF 2SJ495 C11892E 2SJ495 TEA-1035 A3856 m30 tf 125

    2SJ492

    Abstract: No abstract text available
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SJ492 TO-263 +0.1 1.27-0.1 RDS on 2 = 185 m (MAX.) (VGS =-4 V, ID =-10 A) Low Ciss: Ciss = 1210 pF (TYP.) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode +0.2 4.57-0.2 5.60 (MAX.) (VGS = -10 V, ID = -10 A)


    Original     		PDF 2SJ492 O-263 --10A 2SJ492

    2SJ499

    Abstract: N6589
    Text: 注文コード No. N 6 5 8 9 2SJ499 No. N6589 63000 新 2SJ499 特長 P チャネル MOS 形シリコン電界効果トランジスタ ロードスイッチ用 ・低オン抵抗。 ・ 4V駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃ ドレイン・ソース電圧


    Original     		PDF 2SJ499 N6589 2092B IT01954 IT01953 --15V --10V IT01952 IT01955 2SJ499 N6589

    Untitled

    Abstract: No abstract text available
    Text: 2SJ499 P- Channel Silicon MOS FET TENTATIVE Features and Applications • Low ON-state resistance. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current(Pulse) Allowable power Dissipation


    Original     		PDF 2SJ499 --30V --10V --10V --15V

    Hitachi 2SJ

    Abstract: Hitachi DSA00279
    Text: 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features • Low on-resistance R DS on = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A Outline 2SJ496


    Original     		PDF 2SJ496 ADE-208-482 Hitachi 2SJ Hitachi DSA00279

    2SJ496

    Abstract: 2SJ496TZ-E PRSS0003DC-A
    Text: 2SJ496 Silicon P Channel MOS FET REJ03G0870-0300 Previous: ADE-208-482A Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance


    Original     		PDF 2SJ496 REJ03G0870-0300 ADE-208-482A) PRSS0003DC-A 2SJ496 2SJ496TZ-E PRSS0003DC-A

    2SJ492

    Abstract: 2SJ492-S 2SJ492-ZJ MP-25
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SJ492 P チャネル・パワーMOS FET スイッチング用 2SJ492 は P チャネル縦型パワーMOS FET で，スイッチング特性が優れており，各種アクチュエータ駆動用途や


    Original     		PDF 2SJ492 O-262 MP-25 2SJ492-ZJ O-220AB MP-25) 2SJ492-S O-220SMD 2SJ492 2SJ492-S 2SJ492-ZJ

    2SJ492

    Abstract: 2SJ492-S 2SJ492-ZJ MP-25
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ492 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is P-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SJ492 TO-220AB 2SJ492-S TO-262 2SJ492-ZJ TO-263 designed for DC/DC converters and motor/lamp driver


    Original     		PDF 2SJ492 O-220AB 2SJ492-S O-262 2SJ492-ZJ O-263 2SJ492 2SJ492-S 2SJ492-ZJ MP-25

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SJ496 R07DS0433EJ0400 Previous: REJ03G0870-0300 Rev.4.00 Jun 07, 2011 Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices.


    Original     		PDF 2SJ496 R07DS0433EJ0400 REJ03G0870-0300) PRSS0003DC-A

    2SJ496

    Abstract: Hitachi 2SJ DSA003642
    Text: 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482A Z 2nd. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A


    Original     		PDF 2SJ496 ADE-208-482A 2SJ496 Hitachi 2SJ DSA003642

    2SJ496

    Abstract: No abstract text available
    Text: 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features • Low on-resistance R DS on = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A Outline TO-92 Mod


    Original     		PDF 2SJ496 ADE-208-482 2SJ496

    PC1094

    Abstract: tea 1020 2SJ495 D1126
    Text: データ・シート MOS形電界効果パワートランジスタ MOS Field Effect Power Transistors 2SJ495 PチャネルパワーMOSFET スイッチング用 工業用 本製品はＰチャネル縦型パワーMOSFETで，オン抵抗特性が優れており，各種アクチュエータ駆動回路やスイッチ


    Original     		PDF 2SJ495 MP-45FISOLATED O-220 PW10s, 108-0171NEC 46017NEC 54024NEC PC1094 tea 1020 2SJ495 D1126

    Hitachi 2SJ

    Abstract: Hitachi DSA002757
    Text: 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features • Low on-resistance R DS on = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A Outline 2SJ496


    Original     		PDF 2SJ496 ADE-208-482 Hitachi 2SJ Hitachi DSA002757

    Untitled

    Abstract: No abstract text available
    Text: _ DATA SHEET_ MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.


    OCR Scan     		PDF 2SJ494

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 10 .0 ± 0.3


    OCR Scan     		PDF 2SJ494

    2sk135

    Abstract: 2SK134 2SJ49 2sk134 hitachi 2sk135 2SK133 2Sk135 HITACHI 2Sk134 HITACHI 2SK13S HITACHI 2SK133 2sk133 2Sj48
    Text: blE D *44^205 ÜD13D0Ö 217 IHIT4 2SK133,2SK134,2SK135 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ48, 2SJ49, 2SJ50 • FEATURES • • • • • • • High Power Gain. Excellent Frequency Response.


    OCR Scan     		PDF D13D0Ö 2SK133 2SK134 2SK135 2SJ48, 2SJ49, 2SJ50 35FOR 2sk135 2SJ49 2sk134 hitachi 2sk135 2Sk135 HITACHI 2Sk134 HITACHI 2SK13S HITACHI 2SK133 2sk133 2Sj48

    C11892E

    Abstract: TEA-1037 D1297
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in m illim eter T his product is P-Channel MOS Field Effect Transistor designed for high current switching applications.


    OCR Scan     		PDF 2SJ495 C11892E TEA-1037 D1297

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in m illim eter This product is P-Channel MOS Field E ffect Transistor designed for high current switching applications.


    OCR Scan     		PDF 2SJ495