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    2SJ438 Price and Stock

    Toshiba America Electronic Components 2SJ438,Q(J

    MOSFET P-CH TO220NIS
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    Toshiba America Electronic Components 2SJ438,Q(M

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    Toshiba America Electronic Components 2SJ438,MDKQ(J

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    Toshiba America Electronic Components 2SJ438,MDKQ(M

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    Toshiba America Electronic Components 2SJ438(CANO,Q,M)

    MOSFET P-CH TO220NIS
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    2SJ438 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SJ438 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SJ438 Toshiba TRANS MOSFET P-CH 60V 5A 3(2-10R1B) Original PDF
    2SJ438 Toshiba Original PDF
    2SJ438 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ438 Toshiba Silicon P channel field effect transistor for high speed, high current switching applications, DC-DC converter, relay drive and motor drive applications Scan PDF
    2SJ438 Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (LL-pi-MOSV) Scan PDF
    2SJ438,MDKQ(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH Original PDF
    2SJ438,MDKQ(M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH Original PDF
    2SJ438,Q(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH Original PDF
    2SJ438,Q(M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH Original PDF
    2SJ438(AISIN,A,Q) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH Original PDF
    2SJ438(AISIN,Q,M) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH Original PDF
    2SJ438(CANO,A,Q) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH Original PDF
    2SJ438(CANO,Q,M) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH Original PDF
    2SJ438(Q) Toshiba 2SJ438 - Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) TO-220NIS Original PDF

    2SJ438 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistor J438

    Abstract: j438 J438 3 2SJ438
    Text: 2SJ438 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ438 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SJ438 Transistor J438 j438 J438 3 2SJ438

    2SJ438

    Abstract: No abstract text available
    Text: 2SJ438 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ438 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ438 2SJ438

    Transistor J438

    Abstract: j438 2SJ438 J438 3
    Text: 2SJ438 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ438 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ438 Transistor J438 j438 2SJ438 J438 3

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    j438

    Abstract: 2SJ438
    Text: 2SJ438 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅤ 2SJ438 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 0.16Ω (標準) z オン抵抗が低い。


    Original     		PDF 2SJ438 SC-67 2-10R1B 2002/95/EC) j438 2SJ438

    2SJ438

    Abstract: No abstract text available
    Text: 2SJ438 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ438 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) l High forward transfer admittance


    Original     		PDF 2SJ438 2SJ438

    2SJ438

    Abstract: No abstract text available
    Text: 2SJ438 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ438 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ438 2SJ438

    Transistor J438

    Abstract: j438 2SJ438
    Text: 2SJ438 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ438 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SJ438 Transistor J438 j438 2SJ438

    Transistor J438

    Abstract: J438 2SJ438
    Text: 2SJ438 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ438 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SJ438 Transistor J438 J438 2SJ438

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    2SJ438

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ438 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ438 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS (.2 ± 0 .2 2.710.2


    OCR Scan     		PDF 2SJ438 --60V) --10V, 2SJ438

    2SJ438

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ438 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ438 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10 ± 0.3 0 3 .2 ± 0.2


    OCR Scan     		PDF 2SJ438 2SJ438

    2SJ438

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ438 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ438 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RE LAY DRIVE AND MOTOR DRIVE APPLICATIONS 10 ± 0.3 ^ 3.2 ± 0.2


    OCR Scan     		PDF 2SJ438 2SJ438

    2SJ438

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ438 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ438 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 r 4V Gate Drive


    OCR Scan     		PDF 2SJ438

    sc sf 12A H3

    Abstract: 2SJ438
    Text: TO SHIBA 2SJ438 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2 S J 43 8 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 0 3 .2 ± 0 .2


    OCR Scan     		PDF 2SJ438 100/i sc sf 12A H3 2SJ438

    2SJ438

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ438 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ438 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS r 10 ±0.3 4V Gate Drive


    OCR Scan     		PDF 2SJ438 0-16O 2SJ438

    transistor 016h

    Abstract: 2SJ438
    Text: T O SH IB A 2SJ438 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ438 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive


    OCR Scan     		PDF 2SJ438 --100//A --60V) --10V, --25fì transistor 016h 2SJ438