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    2SJ387S Price and Stock

    Rochester Electronics LLC 2SJ387STL-E

    P-CHANNEL POWER MOSFET
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    DigiKey 2SJ387STL-E Bulk 115
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    Renesas Electronics Corporation 2SJ387STL-E

    2SJ387 - Power Field-Effect Transistor, 10A, 20V, P-Channel MOSFET '
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    Rochester Electronics 2SJ387STL-E 14,497 1
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    2SJ387S Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ387(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SJ387S Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ387S Hitachi Semiconductor Mosfet Guide Original PDF
    2SJ387S Kexin P-Channel MOSFET Original PDF
    2SJ387(S) Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ387S Renesas Technology FET Transistor, Silicon P-Channel MOS FET Original PDF
    2SJ387S Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ387S Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ387S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SJ387S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ387S

    Abstract: TR325
    Text: IC MOSFET SMD Type SMDType Silicon P-Channel MOSFET 2SJ387S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3.80 +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28


    Original
    PDF 2SJ387S O-252 2SJ387S TR325

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    2SJ387

    Abstract: 2SJ387L-E 2SJ387STL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


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    PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    2SJ387STL-E

    Abstract: REJ03G0862-0200 2SJ387 2SJ387L-E PRSS0004ZD-B PRSS0004ZD-C *0862 dpak
    Text: 2SJ387 L , 2SJ387(S) Silicon P Channel MOS FET REJ03G0862-0200 (Previous: ADE-208-1196) Rev.2.00 Sep 07, 2005 Description High speed power switching Features • • • • Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source


    Original
    PDF 2SJ387 REJ03G0862-0200 ADE-208-1196) PRSS0004ZD-B PRSS0004ZD-C 2SJ387STL-E REJ03G0862-0200 2SJ387L-E PRSS0004ZD-B PRSS0004ZD-C *0862 dpak