2SJ337
Abstract: No abstract text available
Text: Ordering number:EN4669 P-Channel Silicon MOSFET 2SJ337 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ337] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5
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EN4669
2SJ337
2083B
2SJ337]
2092B
2SJ337
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2SJ337
Abstract: No abstract text available
Text: Ordering number:EN4669 P-Channel Silicon MOSFET 2SJ337 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ337] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5
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EN4669
2SJ337
2083B
2SJ337]
2092B
2SJ337
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2SJ337
Abstract: ITR00443 ITR00444 ITR00445 ITR00446 ITR00447 d4120 BX-0830 18V00
Text: 注文コード No. N 4 6 6 9 2SJ337 No. 4 6 6 9 52599 新 2SJ337 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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2SJ337
2092B
ITR00448
--10V
ITR00447
ITR00449
ITR00450
2SJ337
ITR00443
ITR00444
ITR00445
ITR00446
ITR00447
d4120
BX-0830
18V00
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2SJ337
Abstract: s6590
Text: Ordering number: EN 4669 i No.4669 SA IVO i _ 2SJ337 P-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu res • Low ON resistance. - Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C
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2SJ337
s6590
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2SK2637
Abstract: No abstract text available
Text: • LD Series Lineup Type No. Package V OSS * * - V (V) *0 o Pd m Electrical characteristics at Ta = 25°C « tm » 'iifflP. Absolute maximum 1 VDss = 12 V, P-channel m Vostofl) min to max M 2SJ316 2SJ335 1.0 ±15 PCP ±10 XP5 FX601 XP6 ±15 Vg s = 4V VfigstOV
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2SJ316
2SJ335
2SJ381
FX207
FX601
2SJ336
2SJ337
2SJ382
2SJ383
2SJ419
2SK2637
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Untitled
Abstract: No abstract text available
Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch
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2SJ284*
2SJ286*
2SK1847
2SJ285*
2SJ233
2SK1731
2SK1732
2SK1734
2SK1735
DD14SSD
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2SJ468
Abstract: 2SJ191 2SJ271 2SJ260 2SJ189 2SJ192 2SJ194 2SJ195 2SJ281 2SJ336
Text: Continued from previous page Electrical characteristics Ta = 25 V Absolute maximum ratings Type No. Package type Applications Rds(<w) @ Id •VGS VOSS (V) VGSS (V) ID (A) PD (W) Tdi OC) |Yfi|@ VDS ■ID RDS(mi) max(Q) Id (A) VGS (V) JA VDS (V) (A) 2S JI8 8
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2SJI88
2SJ189
2SJ191
2SJ192
2SJ194
2SJ195
2SJ253
T0220
2SJ260
2SJ468
2SJ271
2SJ281
2SJ336
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2SK2153
Abstract: 2SJ332S
Text: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^
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2SJ381
2SJ382
2SJ383
2SJ419
2SJ42Q
2SK2316
2SK2317
2SK2318
2SK2440
2SK2441
2SK2153
2SJ332S
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Untitled
Abstract: No abstract text available
Text: 3.50 PHONE JACK -o 1 V Schematic -o 1 -o ♦ -O 1 -O 1 -o 4 A— o AE=S A£=g W/l NEW 2SJ-33723T13 2SJ-33733T13 2SJ-33743T13 2SJ-33753T13 SCREW OLD W/O NEW 2SJ-33723N13 2SJ-33733N13 2SJ-33743N13 2SJ-33753N13 SCREW OLD SJ-3372-N-M SJ-3373-N-M SJ-3374-N-M SJ-3375-N-M
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2SJ-3372
2SJ-33723T13
2SJ-33733T13
2SJ-33743T13
2SJ-33753T13
SJ--3373--M
SJ--3374--M
2SJ-33723N13
2SJ-33733N13
2SJ-33743N13
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2DC-S005D100
Abstract: 2dc-0005d100 2MP-0402 2DC-0005B100 2AC-009A 2DJ-050A0003 2MJ-0106A121 2SJ-05031T13 2DJ-0215PGS2 jack p10
Text: Part AC Part No No Index RECEPTACLE Page No Part No Page No 2AC-00100030 P63 2AC-015B2340 P68 2AC-00400030 P64 2AC-015B2540 P68 2AC-00500030 P64 2AC-015B3040 P68 2AC-008A0810 P65 2AC-015C1040 P68 2AC-008A0820 P65 2AC-015C1340 P68 2AC-008A2010 P65 2AC-015C1540
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2AC-00100030
2AC-00400030
2AC-00500030
2AC-008A0810
2AC-008A0820
2AC-008A2010
2AC-008A2020
2AC-009A3910
2AC-009A3920
2AC-009A4010
2DC-S005D100
2dc-0005d100
2MP-0402
2DC-0005B100
2AC-009A
2DJ-050A0003
2MJ-0106A121
2SJ-05031T13
2DJ-0215PGS2
jack p10
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