2SJ181S Search Results

2SJ181S Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SJ181STR-E		Renesas Electronics Corporation	Pch Single Power Mosfet -600V -0.5A 25000Mohm DPAK(S)/To-252

2SJ181S Datasheets (10)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SJ181(S)		Hitachi Semiconductor	Power switching MOSFET		Original	PDF
2SJ181(S)		Hitachi Semiconductor	Silicon P-Channel MOS FET		Original	PDF
2SJ181S		Hitachi Semiconductor	Silicon P-Channel MOS FET		Original	PDF
2SJ181S		Kexin	P-Channel MOSFET		Original	PDF
2SJ181(S)		Renesas Technology	Silicon P Channel MOS FET		Original	PDF
2SJ181S		Renesas Technology	Silicon P-Channel MOS FET High speed power switching		Original	PDF
2SJ181S		Renesas Technology	Silicon P-Channel MOS FET		Original	PDF
2SJ181S		Renesas Technology	Silicon P Channel MOS FET		Original	PDF
2SJ181S		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF
2SJ181S		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF

2SJ181S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
equivalent smd mosfet Abstract: 2SJ181S Text: MOSFET SMD Type P-Channel MOS FET For High-Speed Switching 2SJ181S TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 No secondary breakdown Suitable for switching regulator and DC-DC converter 2.3 +0.1 0.60-0.1	Original	PDF	2SJ181S O-252 equivalent smd mosfet 2SJ181S
Untitled Abstract: No abstract text available Text: Preliminary Datasheet 2SJ181 L , 2SJ181(S) R07DS0395EJ0300 (Previous: REJ03G0848-0200) Rev.3.00 May 16, 2011 Silicon P Channel MOS FET Description High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current	Original	PDF	2SJ181 R07DS0395EJ0300 REJ03G0848-0200) PRSS0004ZD-A PRSS0004ZD-C
2SJ181 Abstract: 2SJ181L-E PRSS0004ZD-A PRSS0004ZD-C Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	PDF	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Untitled Abstract: No abstract text available Text: Preliminary Datasheet 2SJ181 L , 2SJ181(S) R07DS0395EJ0300 (Previous: REJ03G0848-0200) Rev.3.00 May 16, 2011 Silicon P Channel MOS FET Description High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current	Original	PDF	2SJ181 R07DS0395EJ0300 REJ03G0848-0200) PRSS0004ZD-A PRSS0004ZD-C
2SJ181 Abstract: 2SJ181L-E PRSS0004ZD-A PRSS0004ZD-C Text: 2SJ181 L , 2SJ181(S) Silicon P Channel MOS FET REJ03G0848-0200 (Previous: ADE-208-1183) Rev.2.00 Sep 07, 2005 Description High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown	Original	PDF	2SJ181 REJ03G0848-0200 ADE-208-1183) PRSS0004ZD-A PRSS0004ZD-C 2SJ181L-E PRSS0004ZD-A PRSS0004ZD-C