Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SJ128Z Search Results

    2SJ128Z Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ128-Z-E1-AZ Renesas Electronics Corporation P-Channel Silicon Power MOSFET For High Speed Switching Visit Renesas Electronics Corporation
    2SJ128-Z-E2-AZ Renesas Electronics Corporation P-Channel Silicon Power MOSFET For High Speed Switching Visit Renesas Electronics Corporation
    2SJ128-Z-AZ Renesas Electronics Corporation P-Channel Silicon Power MOSFET For High Speed Switching Visit Renesas Electronics Corporation

    2SJ128Z Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ128Z Unknown FET Data Book Scan PDF
    2SJ128-Z Unknown MOS Field Effect Power Transistors Scan PDF
    2SJ128-Z NEC TRANS MOSFET P-CH 100V 2A 3TO-252 Scan PDF
    2SJ128-Z NEC Fast switching P-channel silicon power MOS FET industrial use. Scan PDF
    2SJ128-Z NEC Fast Switching P-Channel Silicon Power MOS FET Industrial Use Scan PDF
    2SJ128-Z-AZ NEC Transistor Mosfet P-CH 100V 2A 3TO-252 Scan PDF

    2SJ128Z Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sj111

    Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118


    Original     		PDF 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2sj111 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122

    2sk4145

    Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
    Text: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current


    Original     		PDF SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919

    2sk4145

    Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080
    Text: PowerMOSFET Product Overview www.renesas.eu 2010.04 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: Renesas uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)


    Original     		PDF SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    2SJ128-Z

    Abstract: TC181
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ128-Z P-CHANNEL SILICON POWER MOS FET FOR HIGH SPEED SWITCHING PACKAGE DRAWING Unit: mm • Suitable for switching power supplies, actuator controls, and pulse circuits. 5.0 ±0.2 • 4 V gate drive (Logic level)


    Original     		PDF 2SJ128-Z 2SJ128-Z TC181

    SC-95

    Abstract: 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2sk3919 2SJ598 2SK3570 UPA2723T1A
    Text: PowerMOSFET Product Overview April 2007 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current


    Original     		PDF MP-10, SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) O-252Z, O-252ZK, O-263ZJ, O-263ZK, SC-95 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2sk3919 2SJ598 2SK3570 UPA2723T1A

    2SJ128

    Abstract: 2SJ128-Z
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF 2SJ128 128-Z 2SJ128-ZIC O-252MP-3Z D18294JJ3V0DS003 TC-6092A D18294JJ3V0DS 2SJ128-Z

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original     		PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059

    2SJ128

    Abstract: 2SJ128-Z K1988
    Text: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistors 2SJ128,128-Z Pチャネル・パワーMOS FET スイッチング用 特 外形図（単位：mm） ★ 徴 6.5 ±0.2 ○2SJ128-ZはハイブリッドIC実装に最適なリード加工品です。


    Original     		PDF 2SJ128 128-Z 2SJ128-ZIC O-251MP-3 PW300 Cycle10% O-252MP-3Z D18294JJ3V0DS003 TC-6092A 2SJ128-Z K1988

    2SJ128-Z

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2sk520

    Abstract: 3sk131 cross 2S880 TRANSISTOR AF 416 pnp 2SK738 2SK739 3SK133A 2sc3554 transistor pnp 3906 2SK508
    Text: TY P E NO. CROSS IN D E X TYPE No. A PPLIC ATIO N & STRUCTURE PACKAGE PAGE 1S2835 ANODE COMMON SWITCHING DIO DE M IN I MOLD 83 1S2836 ANO DE COMMON SWITCHING DIODE M IN I MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE M IN I MOLD 86 1S2838 CATHODE COMMON SWITCHING DIOOE


    OCR Scan     		PDF 1S2835 1S2836 1S2837 1S2838 1SS123 1SS153 1SS220 1SS221 1SS222 1SS223 2sk520 3sk131 cross 2S880 TRANSISTOR AF 416 pnp 2SK738 2SK739 3SK133A 2sc3554 transistor pnp 3906 2SK508

    Untitled

    Abstract: No abstract text available
    Text: MOS FIELD EFFECT POWER TRANSISTOR 2 S J 1 2 8 - Z FAST SW ITCHING P-CHANNEL SILICON POWER MOS FET INDUSTRIAL USE FE A TU R E S P A C K A G E D IM E N S IO N S in millimeters • Suitable fo r sw itch ing pow er supplies, actuater c ontrols, and pulse circuits.


    OCR Scan     		PDF 2SJ128Z 2SJ128-Z

    2SJ128

    Abstract: VDS-100
    Text: mos m m n M O S F ie ld E f fe c t P o w e r T r a n s is t o r s 2SJ128,1 28-Z P7- + & JU ' < r7 — M OS F E T •X - f ' y - ? - > 7 l if f l O D x V '7 'U 'O V V cs = — 4 V T 'i O r h E f t j 'j 'n i j l - C 'i - . o ü iR USl., (-0.8 2) ^ /_•¡ h W r t - B C


    OCR Scan     		PDF o2SJ128-ZÃ Ta-25 PWS300 Vcc--50V. 2SJ128 128-Z 2SJ1281-fi0 2SJ128-ZWBB VDS-100