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    2SD2623 Search Results

    2SD2623 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD2623 Panasonic Silicon NPN epitaxial planar type Original PDF
    2SD2623 Panasonic Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires Original PDF
    2SD262300L Panasonic TRANS NPN AF AMP 20VCEO SMINI 3P Original PDF
    2SD262300L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN AF AMP 20VCEO SMINI 3P Original PDF
    2SD26232VS Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD2623G0L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 20VCEO 500MA SMINI-3 Original PDF

    2SD2623 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2623G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2623G Silicon NPN epitaxial planar type For low-frequency amplification • Features ■ Package • Code SMini3-F2 • Marking Symbol: 2V • Pin Name 1: Base 2: Emitter 3: Collector


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    PDF 2002/95/EC) 2SD2623G 2SD2623G

    2SD2623

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2623 Silicon NPN epitaxial planar type For low-frequency amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features • Low ON resistance Ron • S-Mini type package, allowing downsizing of the equipment and


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    PDF 2002/95/EC) 2SD2623 2SD2623

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2623 Silicon NPN epitaxial planar type For low-frequency amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features • Low ON resistance Ron • S-Mini type package, allowing downsizing of the equipment and


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    PDF 2002/95/EC) 2SD2623

    2SD2623

    Abstract: No abstract text available
    Text: Transistors 2SD2623 Silicon NPN epitaxial planar type 0.425 Unit: mm For low-frequency amplification 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • Low on-resistance Ron • S-Mini type package, allowing downsizing of the equipment and


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    PDF 2SD2623 2SD2623

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2623 Silicon NPN epitaxial planar type For low-frequency amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features • Low ON resistance Ron • S-Mini type package, allowing downsizing of the equipment and


    Original
    PDF 2002/95/EC) 2SD2623

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2623G Silicon NPN epitaxial planar type For low-frequency amplification • Features ■ Package • Code SMini3-F2 • Marking Symbol: 2V • Pin Name 1: Base 2: Emitter 3: Collector


    Original
    PDF 2002/95/EC) 2SD2623G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2623 Silicon NPN epitaxial planar type For low-frequency amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features • Low ON resistance Ron • S-Mini type package, allowing downsizing of the equipment and


    Original
    PDF 2002/95/EC) 2SD2623

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2623G Silicon NPN epitaxial planar type For low-frequency amplification • Features • Low ON resistance Ron • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.


    Original
    PDF 2002/95/EC) 2SD2623G

    2SD2623

    Abstract: No abstract text available
    Text: Transistors 2SD2623 Silicon NPN epitaxial planar type For low-frequency amplification 0.425 Unit: mm 0.3+0.1 –0.0 • Features • Low ON resistance Ron • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.


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    PDF 2SD2623 2SD2623

    2SD2623G

    Abstract: 2sd26
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2623G Silicon NPN epitaxial planar type For low-frequency amplification • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Absolute Maximum Ratings Ta = 25°C Parameter


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    PDF 2002/95/EC) 2SD2623G 2SD2623G 2sd26

    2SD2623

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2623 Silicon NPN epitaxial planar type For low-frequency amplification (0.425) Unit: mm 0.3+0.1 –0.0 M Di ain sc te on na tin nc ue e/ d • Features • Low ON resistance Ron


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    PDF 2002/95/EC) 2SD2623 2SD2623

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    XN01558

    Abstract: 2SD2623
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01558 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 4 5 1 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


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    PDF 2002/95/EC) XN01558 XN01558 2SD2623

    2SD2623

    Abstract: XN01558
    Text: Composite Transistors XN01558 Silicon NPN epitaxial planar transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 (0.95) 5 • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half


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    PDF XN01558 2SD2623 XN01558

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


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    PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    2SD2623

    Abstract: XN01558G XN01558
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01558G Silicon NPN epitaxial planar type For low-frequency amplification • Package ■ Features • Code Mini5-G2 • Pin Name 1: Collector (Tr1) 2: Collector (Tr2) 3: Base (Tr2)


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    PDF 2002/95/EC) XN01558G 2SD2623 XN01558G XN01558

    C3507 transistor

    Abstract: C3507 C3502 C3518 c3506 C4804 Q1009 transistor C3552 IC1002 c3552
    Text: PV-GS2P / PV-GS9P / PV-GS12P / PV-GS14P / PV-GS15P / PV-GS9PC / PV-GS13PC / PV-GS15PC NOTE: For placing a purchase order of the parts, be sure to use the part number listed in the parts list. Do not use the part number on this diagram. MAIN IX SCHEMATIC DIAGRAM


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    PDF PV-GS12P PV-GS14P PV-GS15P PV-GS13PC PV-GS15PC Q3506 UNR9214 C3551 L3506 L3507 C3507 transistor C3507 C3502 C3518 c3506 C4804 Q1009 transistor C3552 IC1002 c3552

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01558 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 4 5 2 1 (0.65) 0.30+0.10 –0.05 • Basic Part Number 5˚ • Two elements incorporated into one package


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    PDF 2002/95/EC) XN01558 2SD2623

    2SD2623

    Abstract: XN01558
    Text: Composite Transistors XN01558 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 (0.95) 3 4 5 2 1 (0.65) 0.30+0.10 –0.05 • Basic Part Number 5˚ • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half


    Original
    PDF XN01558 2SD2623 XN01558

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01558 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 1 (0.65) 0.30+0.10 –0.05 • Basic Part Number 0.4±0.2 M Di ain sc te on na


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    PDF 2002/95/EC) XN01558

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx