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    Samtec Inc TW-22-12-S-D-261-115

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    2SD261 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD261 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2SD261 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD261 Unknown Cross Reference Datasheet Scan PDF
    2SD261 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD261 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD261 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD261 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD261 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD261 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD261 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD261 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD261 Semico Medium Power Transistors Scan PDF
    2SD261 USHA Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 600mA. Scan PDF
    2SD2611 ROHM Power Transistor Scan PDF
    2SD2611 ROHM Power Transistor Scan PDF
    2SD2611 ROHM Power Transistor (80V, 7 A) Scan PDF
    2SD2614 ROHM TRANS DARLINGTON NPN 70V 5A 3TO-220FN Original PDF
    2SD2614 ROHM Medium Power Transistor (Motor, Relay drive) (60+10V, 5A) Scan PDF
    2SD2615 ROHM For Motor / Relay drive (120V, 6A) Original PDF
    2SD2615 ROHM Power Transistor (120V, 6A) Scan PDF

    2SD261 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1676

    Abstract: 2SD2618 doide base, collector, emitter
    Text: 2SD2618 Transistors Power Transistor 80V, 4A 2SD2618 !Circuit diagram !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. 4) Complements the 2SB1676. C B R E R B C E 300Ω : Base : Collector


    Original     		PDF 2SD2618 2SB1676. 100ms) 10MHz 2SB1676 2SD2618 doide base, collector, emitter

    2SB1674

    Abstract: 2SD2615
    Text: 2SD2615 Transistors For Motor / Relay drive 120V, 6A 2SD2615 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) Darlington connection , high hFE.


    Original     		PDF 2SD2615 O-220FN 2SB1674 2SB1674 2SD2615

    2SD2616

    Abstract: No abstract text available
    Text: 2SD2616 Transisitors Power Transistor 100V, 5A 2SD2616 !Features 1) Low saturation voltage, typically VCE(sat) = -0.3V at IC / IB=3A / 0.3A. 2) Excellent hFE current characteristics. 3) Pc=30W. (Tc=25°C) !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage


    Original     		PDF 2SD2616 100ms O-220FN 2SD2616

    2SB1672

    Abstract: 2SD2611
    Text: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 !Features 1) Low saturation voltage, typically VCE(sat) = 0.3V at IC / IB =4 / 0.4A. 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.


    Original     		PDF 2SD2611 2SB1672. 100ms 2SB1672 2SD2611

    2SB1676

    Abstract: 2SD2618
    Text: 2SB1676 Transistors Medium Power Transistor Motor, Relay drive (−80V, −4A) 2SB1676 !External dimensions (Units : mm) !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2618.


    Original     		PDF 2SB1676 2SD2618. O-220FN 10MHz 2SB1676 2SD2618

    2SB1674

    Abstract: 2SD2615 transistor 120v
    Text: 2SD2615 Transistors Power Transistor 120V, 6A 2SD2615 !Circuit diagram !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1674. C B R1 R2 E R1 5.0kΩ


    Original     		PDF 2SD2615 2SB1674. 10MHz 2SB1674 2SD2615 transistor 120v

    2SB1674

    Abstract: 2SD2615 transistor 120v
    Text: 2SB1674 Transistors Power Transistor −120V, −6A 2SB1674 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2615.


    Original     		PDF 2SB1674 -120V, 2SD2615. O-220FN -120V 10MHz 2SB1674 2SD2615 transistor 120v

    Untitled

    Abstract: No abstract text available
    Text: 2SD2614 Transistors For Motor / Relay drive 60±10V, 5A 2SD2614 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN zApplications Solenoid drive 8.0 1.2 5.0 15.0 2.8 1.3 0.8 (1)Base 2.54 (2)Collector


    Original     		PDF 2SD2614 O-220FN

    2SD2614

    Abstract: No abstract text available
    Text: 2SD2614 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 5A) 2SD2614 !Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter.


    Original     		PDF 2SD2614 O-220FN 2SD2614

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    fn651

    Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
    Text: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102


    Original     		PDF 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 fn651 CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343

    SK 18752

    Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
    Text: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,


    Original     		PDF O03ED0 dete7837 H1-O03ED0-0805020NM SK 18752 SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751

    ic 3A hfe 500

    Abstract: ib3a 2SD2616 2sd26
    Text: 2SD2616 Transisitors Power Transistor 100V, 5A 2SD2616 ! Features 1) Low saturation voltage, typically VcE(sat) = -0.3V at Ic / Ib=3A / 0.3A. 2) Excellent hFE current characteristics. 3) Pc=30W. (Tc=25°C) I Absolute maximum ratings (Ta=25°C) S ym bol Lim its


    OCR Scan     		PDF 2SD2616 O-220FN ic 3A hfe 500 ib3a 2SD2616 2sd26

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) Maximum Ratings Type No. 'c PD (W) (A) 6Tc=25°t ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2SD261 40 20 5 0.5 2SD468 25 20 5 0.9 2SD468B 25 20 5 2SD46BC


    OCR Scan     		PDF 2SD261 2SD468 2SD468B 2SD46BC 2SD545 2SD545D O-92-1 BC169B BC169C

    2SB1676

    Abstract: 2SD2618 2sd26
    Text: 2SB1676 Transistors Medium Power Transistor Motor, Relay drive (-80V, -4A) 2SB1676 •External dimensions (Units: mm) •Features 1) Darlington connection for a high hre. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2618.


    OCR Scan     		PDF 2SB1676 2SD2618. -50nA -50pA 10MHz 2SB1676 2SD2618 2sd26

    2SD2615

    Abstract: 2SB1674
    Text: 2SD2615 Transistors_ Power Transistor 120V, 6A 2SD2615 •Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. •Circuit diagram 3) Built-in damper diode. 4) Complements the 2SB1674.


    OCR Scan     		PDF 2SD2615 2SB1674. 100ms 2K-20K 10MHz 2SD2615 2SB1674

    TO-220FN

    Abstract: 2SB1674 2SD2615 2sd26
    Text: 2SB1674 Transistors Power Transistor -120V, -6A 2SB1674 •External dimensions (Units: mm) •Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2615.


    OCR Scan     		PDF 2SB1674 -120V, 2SD2615. O-220FN -10MHZ TO-220FN 2SB1674 2SD2615 2sd26

    2SB1672

    Abstract: 2SD2611
    Text: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 • Features 1) Low saturation voltage, typically Vc^sat) = 0.3V at Ic / 2) Excellent DC current gain characteristics. Ib =4 / 0.4A. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.


    OCR Scan     		PDF 2SD2611 2SB1672. 100ms O-220FN 2SB1672 2SD2611

    LT 672

    Abstract: 2SB1672 2SD2611
    Text: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 • Features 1 ) Low saturation voltage, typically Versai) = 0.3V at le / 2) Excellent DC current gain characteristics. Ib =4 / Q.4A. 3) Pc = 30W (Te = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.


    OCR Scan     		PDF 2SD2611 2SB1672. 100ms O-220FN 50fiA LT 672 2SB1672 2SD2611

    2SD2618

    Abstract: 2SB1676
    Text: 2SD2618 Transistors_ Power Transistor 80V, 4A 2SD2618 •Circuit diagram • Features 1 ) Darlington connection for a high hre. 2) Built-in resistor between base and emitter. 3) Built-in damper ddde. 4) Complements the 2SB1676.


    OCR Scan     		PDF 2SD2618 2SB1676. 100ms) O-220FN 1k-10k characterist10k 10MHz 2SD2618 2SB1676

    2SB1672

    Abstract: 2SD2611
    Text: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 • Features 1) Low saturation voltage, typically Vc^sat) = 0.3V at le / 2) Excellent DC cument gain characteristics. Ib =4 / 0.4A. 3) Pc = 30W (Te = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.


    OCR Scan     		PDF 2SD2611 2SB1672. 100ms O-220FN B444S 2SB1672 2SD2611

    2SD468C

    Abstract: 2SD786R BC169C BC170 2SD545E 2SD545F BC169C transistors 2SD786 2SD261 2SD468
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Vcbo (V) Min V C E0 ^EBO (V) Min (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (W) (A) @Tc=25°t @ lc & (mA) 'cBO V CB 'c e s v ce (UA) Max § (V) (UA) Max 0 (V )


    OCR Scan     		PDF 2SD261 O-92-1 2SD468 2SD468B 2SD468C BC168B 2SD786R BC169C BC170 2SD545E 2SD545F BC169C transistors 2SD786

    2SD261

    Abstract: 2SA643 P185 transistor 2sa643 transistor 2sd261 BA RV 251C S6095
    Text: 2SA643 2SA643 PNP x U S IL IC O N E P IT A X IA L T R A N S IS T O R Frequency Pow er A m p lifie r 1# /F E A T U R E S W E I/P A C K A G E DIMENSIONS Unit-.mm S u ita b le f o r aud io p o w er ou tp u t a p p lica tio n s. • a. 2. OW g S S r i i -5 r i: # T ' i -5»


    OCR Scan     		PDF 2SA643 2SD261 2SD261. 2SA643 P185 transistor 2sa643 transistor 2sd261 BA RV 251C S6095