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    2SD216 Search Results

    2SD216 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SD2164-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SD2161-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SD2163-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SD2162-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SD2165-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-45F, / Visit Renesas Electronics Corporation
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    2SD216 Price and Stock

    Rochester Electronics LLC 2SD2161-AZ

    POWER BIPOLAR TRANSISTOR NPN
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    Rochester Electronics LLC 2SD2164-AZ

    POWER BIPOLAR TRANSISTOR NPN
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    ROHM Semiconductor 2SD2167T100P

    TRANS NPN 31V 2A MPT3
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    Renesas Electronics Corporation 2SD2161-AZ

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    Rochester Electronics 2SD2161-AZ 4,173 1
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    Renesas Electronics Corporation 2SD2164-AZ

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    Rochester Electronics 2SD2164-AZ 1,540 1
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    2SD216 Datasheets (77)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD216 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD216 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD216 Unknown Cross Reference Datasheet Scan PDF
    2SD216 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD216 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD216 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD216 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD216 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2161 NEC Semiconductor Selection Guide 1995 Original PDF
    2SD2161 NEC Semiconductor Selection Guide Original PDF
    2SD2161 NEC NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW- Original PDF
    2SD2161 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2161 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2161 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2161 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2162 NEC Semiconductor Selection Guide 1995 Original PDF
    2SD2162 NEC Semiconductor Selection Guide Original PDF
    2SD2162 NEC NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW- Original PDF
    2SD2162 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2162 Unknown Transistor Substitution Data Book 1993 Scan PDF

    2SD216 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2167

    Abstract: T100
    Text: 2SD2167 Transistors Power Transistor 31±4V, 2A 2SD2167 zExternal dimensions (Unit : mm) zFeatures 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads.


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    PDF 2SD2167 SC-62 2SD2167 T100

    Untitled

    Abstract: No abstract text available
    Text: 2SD2166 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


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    PDF 2SD2166

    2SD2165

    Abstract: *d2165
    Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SD2165 NPNエピタキシアル形シリコン・トランジスタ 低周波電力増幅,低速度スイッチング用 2SD2165は,hFEが特に高くなるように設計されたシングルのパ


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    PDF 2SD2165 2SD2165hFE O-220MP-45F 200IB D13178JJ3V0DS M8E02 2SD2165 *d2165

    d204 transistor

    Abstract: D204 2SD2166 2SB1412 2SB1436 2SD2097 2SD2098 2SD2118 transistors 96-229-D204
    Text: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /


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    PDF 2SD2098 2SD2118 2SD2097 2SD2166 2SB1386 2SB1412 2SB1326 2SB1436. 96-229-D204) d204 transistor D204 2SD2166 2SB1436 transistors 96-229-D204

    2SD2576

    Abstract: 2SD2394 D310 2SD2167 D348 transistor D348
    Text: Transistors 2SD2167 2SD2394 / 2SD2576 92S-358–D310 (94L-1098-D348) 314


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    PDF 2SD2167 2SD2394 2SD2576 92S-358 94L-1098-D348) 2SD2576 D310 2SD2167 D348 transistor D348

    NEC RELAY

    Abstract: No abstract text available
    Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct


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    PDF 2SD2163 2SD2163 NEC RELAY

    transistor C017

    Abstract: D1560 transistor t 2190 2SD2164
    Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SD2164 NPN エピタキシアル形シリコン・トランジスタ 低周波電力増幅,低速度スイッチング用 2SD2164 は,hFE が特に高くなるように設計されたシングルの


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    PDF 2SD2164 2SD2164 D15606JJ3V0DS transistor C017 D1560 transistor t 2190

    2SD2161

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and


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    PDF 2SD2161 2SD2161 O-220 O-220)

    2SD2167

    Abstract: T100 2A 5v ZENER DIODE
    Text: 2SD2167 Transistors Power Transistor 31±4V, 2A 2SD2167 !External dimensions (Units : mm) !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads.


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    PDF 2SD2167 SC-62 A/50mA 30MHz 2SD2167 T100 2A 5v ZENER DIODE

    2SD2162

    Abstract: TD-7622
    Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SD2162 NPN エピタキシアル形シリコン・トランジスタ(ダーリントン接続) 低周波電力増幅,低速度スイッチング用 工業用


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    PDF 2SD2162 2SD2162 O-220 O-220) D14865JJ2V0DS00 TD-7622 D14865JJ2V0DS00 TD-7622

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD2167 Features Built-in zener diode between collector and base. Zener diode has low voltage dispersion. Strong protection against reverse power surges due to low loads. PC=2 W on 40 40 0.7mm ceramic board .


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    PDF 2SD2167 30MHz

    2SB1436

    Abstract: tc255 2SD2166 f-30MHz
    Text: SavantIC Semiconductor Product Specification 2SB1436 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SD2166 ·Low collector saturation voltage APPLICATIONS ·For audio power amplifier applications PINNING PIN DESCRIPTION


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    PDF 2SB1436 O-126 2SD2166 30MHz 2SB1436 tc255 2SD2166 f-30MHz

    Untitled

    Abstract: No abstract text available
    Text: 2SD2167 Transistors Power Transistor 31±4V, 2A 2SD2167 !External dimensions (Units : mm) !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads.


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    PDF 2SD2167 SC-62

    transistor

    Abstract: B204 2SB1412 2sb1386 2SD2098 hFE is transistor 2SD2166 2SB1436 2SB1326 data sheet transistor PNP
    Text: Transistors Low Frequency Transistor *20V,*5A 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.


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    PDF 2SB1386 2SB1412 2SB1326 2SB1436 2SD2098 2SD2118 2SD2097 2SD2166. 96-141-B204) transistor B204 hFE is transistor 2SD2166 2SB1436 data sheet transistor PNP

    2SD2165

    Abstract: NEC marking b
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and


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    PDF 2SD2165 2SD2165 NEC marking b

    2sD2394

    Abstract: D348 transistor TI2150 marking HRA 2SD2576
    Text: 2SD2167 2SD2394 / 2SD2576 Transistors I Power Transistor 31 ± 4 V , 2A 1) 2) 3) 4) Built-in zene r diode betw een collector and base. Z ener diode has low voltage dispersion. Strong protection against reverse pow er surges due to low loads. P c * 2 W (On 4 0 X 4 0 X 0 -7 m m ceram ic board)


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    PDF 2SD2167 2SD2394 2SD2576 2SD2167 O-220, 0Dlb713 O-220FN O-220FN O220FP T0-220FP, D348 transistor TI2150 marking HRA 2SD2576

    Untitled

    Abstract: No abstract text available
    Text: h 7 > V ^ ^/Transistors 2SD2167 2SD2167 vu=i>h7>v* W Epitaxial Planar NPN Silicon Transistor ftHiSMzftiSliffl/l-ow Freq. Power Amp. • ft* • W fN 'jiia / 'D im e n sio n s U nit: mm 1) H U ? ? • 3 1 ± 4 V 0 }y x l — ? ! * - K S rtlK o 2) "J tlT -* & . < » r t v V W f t H U Z 'P


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    PDF 2SD2167 A/50mA) 30MHz

    Q451

    Abstract: 143ES 144ESA 2SB1616 2SD2478 96-229-D 124ES 114ES 2sD 313 2SD 388 A
    Text: Transistors LOW VcE sat Trsnsistoffstrobe flash) 2SD2098/2SD2118/2SD2097/2SD2166 •F e a tu re s 1) Low VcE(sat). V cE M = 0 .2 5 V (Typ.) (Ic / I b 2) •E x t e r n a l dim ensions (Units: mm) 2SD2098 18±0.1 r—-I = 4 A /0 .1 A ) r~fi Excellent D C current gain charac­


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    PDF 2SD2098/2SD2118/2SD2097/2SD2166 2SD2098 SC-62 2SD2118 SC-63 TA114ESA 114ESA 100mA TA124ESA 124ESA Q451 143ES 144ESA 2SB1616 2SD2478 96-229-D 124ES 114ES 2sD 313 2SD 388 A

    sc6202

    Abstract: SC-6202 ZENER DIODE 2A MARKING DL 2SD2167 T100
    Text: 2SD2167 Power Transistor 31±4V, 2A 2SD2167 •Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due


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    PDF 2SD2167 40x40x0 SC-62 /50mA 30MHz sc6202 SC-6202 ZENER DIODE 2A MARKING DL 2SD2167 T100

    2sd2166

    Abstract: oc sc62
    Text: T r a n s is to r s • 7 f l 2 f l 1 1 cì O G lbTG a b lT ■ LOW VcE sat TrànSÌStOr(Strobe flash) 2SD2098/2SD2118/2SD2097/2SD2166 #F eatures 1) •E x te rn a l dimensions (Units: mm) LOW VcE(sat). VcE(sat) (I c / I b = 0.25V (Typ.) 2SD2098 = 4A/0.1A)


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    PDF 2SD2098/2SD2118/2SD2097/2SD2166 2SD2098 2SB13 /2SB141 2SD2118 SC-62 SC-63 2SD2097 2SD2166 O-220, 2sd2166 oc sc62

    2sd2152

    Abstract: C4115S 2SC4115 C4115-S 2SD2154
    Text: 2SC4115S/2SD2152/2SD2154/2SD2164 h 7 > y 7 £ /T ra n s is to rs 2 S C 4 1 1 5 2 S D 2 1 6 S / 2 S D 2 1 5 2 / 2 S D 2 1 5 4 / 4 Epitaxial Planar NPN Silicon Transistors • fô ft • ÿl-Jfi'ïf iiS l/D im e n s io n s Unit : mm 1) V c E ( s a t|* sß ^ ' o


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    PDF 2SC4115S/2SD2152/2SD2154/2SD2164 2sd2152 C4115S 2SC4115 C4115-S 2SD2154

    transistor D 2394

    Abstract: 2SD2576
    Text: 2SD2167 2SD2394 / 2SD2576 Transistors I Power Transistor 31 ± 4 V , 2A 2SD2167 •F e a tu re s 1 ) Built-in zs n e r diode betw een collector and base. 2 ) Z en er diode has low voltage dispersion. 3 ) Strong protection aga inst reverse pow er surges due to low loads.


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    PDF 2SD2167 2SD2394 2SD2576 2SD2167 -----2SD2576 cb--60V 94L-1098-0348) transistor D 2394 2SD2576

    2SD209B

    Abstract: No abstract text available
    Text: Transistors Low VcE sat Transist0r(strobe flash) 2SD2098/2SD2118/2SD2097/2SD2166 •F eatu re s 1) •E xte rn a l dimensions (Units: mm) L O W VcE(eat). VcE(sat) = 0.25V (Typ.) ( I c / I b = 4A/0.1 A) 2) Excellent DC current gain charac­ teristics. 3) Complements the


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    PDF 2SD2098/2SD2118/2SD2097/2SD2166 2SD2098 2SB1386/2SB1412/2SB1326/2SB SC-62 2SD2118 2SD209B

    0.25V zener

    Abstract: 2SD2167
    Text: 2SD2167 N "7 > V 7s 2/Transistors 2SD216T Epitaxial Planar NPN Silicon Transistor fiffl/L o w Freq. Power Amp. ÿ j-Îi^ jiH /D im e n s io n s Unit : mm 1) • A i- x n m : : 3 1 ± 4 V W 'V 2) 7 i t - i Œ » / < 7 7 i« g i: ÿ l.fi±0.l & i'o = jr T i_


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    PDF 2SD2167 2SD216T SC-62 40X40X0 A/50mA 30MHz 0.25V zener 2SD2167