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    2SD2029 Search Results

    2SD2029 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD2029 Panasonic NPN Transistor Original PDF
    2SD2029 Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD2029 Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD2029 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2029 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2029 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2029 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2029S Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF

    2SD2029 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1347

    Abstract: 2SD2029
    Text: SavantIC Semiconductor Product Specification 2SB1347 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2029 ·Wide area of safe operation ·High transition frequency fT ·Optimum for the output stage of a Hi-Fi audio amplifier


    Original     		PDF 2SB1347 2SD2029 -160V; -20mA 2SB1347 2SD2029

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm 2.0±0.3 3.0±0.3 Unit Collector-base voltage Emitter open VCBO −160 V Collector-emitter voltage (Base open) VCEO −160 V


    Original     		PDF 2SB1347 2SD2029

    2SB1347

    Abstract: 2SD2029
    Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 5.0±0.3 3.0 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


    Original     		PDF 2SD2029 2SB1347 2SB1347 2SD2029

    2SB1347

    Abstract: 2SD2029
    Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (1.5) 1.0±0.2 0.6±0.2 10.9±0.5 Rating Unit Collector to base voltage VCBO 160 V


    Original     		PDF 2SD2029 2SB1347 2SB1347 2SD2029

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm 2.0 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −160


    Original     		PDF 2SB1347 2SD2029

    2SB1347

    Abstract: 2SD2029
    Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current


    Original     		PDF 2SB1347 2SD2029 2SB1347 2SD2029

    2SB1347

    Abstract: 2SD2029
    Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (2.0) (1.5) • Excellent collector current IC characteristics of forward current transfer ratio hFE


    Original     		PDF 2SB1347 2SD2029 2SB1347 2SD2029

    2SD2029

    Abstract: 2SB1347
    Text: SavantIC Semiconductor Product Specification 2SD2029 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SB1347 ·Wide area of safe operation ·High transition frequency APPLICATIONS ·Optimum for the output stage of a Hi-Fi audio amplifier applications


    Original     		PDF 2SD2029 2SB1347 2SD2029 2SB1347

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm φ 3.3±0.2 2.0±0.3 3.0±0.3 1.5 2.7±0.3 1.0±0.2 • Absolute Maximum Ratings TC = 25°C 0.6±0.2 5.45±0.3 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a


    Original     		PDF 2SD2029 2SB1347

    2SB1347

    Abstract: 2SD2029
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1347 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2029 APPLICATIONS ·Power amplifier applications


    Original     		PDF 2SB1347 -160V 2SD2029 -160V; -20mA; 2SB1347 2SD2029

    2SB1347

    Abstract: 2SD2029
    Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (2.0) (1.5) • Excellent collector current IC characteristics of forward current transfer ratio hFE


    Original     		PDF 2SD2029 2SB1347 2SB1347 2SD2029

    2SB1347

    Abstract: 2SD2029
    Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ● • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO


    Original     		PDF 2SB1347 2SD2029 2SB1347 2SD2029

    2SB1347

    Abstract: 2SD2029
    Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1347 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ● • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO


    Original     		PDF 2SD2029 2SB1347 700mA 600mA 500mA 400mA 2SB1347 2SD2029

    Untitled

    Abstract: No abstract text available
    Text: , One, TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SD2029 Silicon NPN triple diffusion planar type For high power amplification Unit: mm Complementary to 2SB1347 • Features • Satisfactory foward current transfer ratio hFE collector current Ic


    Original     		PDF 2SD2029 2SB1347

    2SB1347

    Abstract: 2SD2029
    Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (1.5) 1.0±0.2 0.6±0.2 10.9±0.5 Rating Unit Collector to base voltage VCBO 160 V


    Original     		PDF 2SD2029 2SB1347 2SB1347 2SD2029

    2SB1347

    Abstract: 2SD2029
    Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ● • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO


    Original     		PDF 2SB1347 2SD2029 2SB1347 2SD2029

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SB1347

    Abstract: 2SD2029 SS 109
    Text: Power T ransistors 2SB1347 2SB1347 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2029 U n it : mm 5.3max. 20.5max. • Features 3.0— • Very good linearity of DC current gain hFi • Wide area of safety operation (ASO)


    OCR Scan     		PDF 2SB1347 2SD2029 G01b2Tb 2SB1347 2SD2029 SS 109

    2SB1347

    Abstract: 2SD2029 20 A class b power transistors current gain
    Text: Power Transistors 2SD2029 2SD2029 Silicon Trip le -D iffu se d Planar Type P a c k a g e D im e n s io n s H igh P o w e r A m p lifie r C o m p le m e n ta ry P a ir with 2 S B 1 3 4 7 U n it 1 m m 2 0 .5 m a x ._ j • F e a tu re s 5.3max. 3.0 4 • V ery g o o d lin earity of D C c u r re n t gain hFE


    OCR Scan     		PDF 2SD2029 2SB1347 2SB1347 2SD2029 20 A class b power transistors current gain

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SB1347 2SB1347 Sipcon PNP Triple-Diffused Planar Type High Power Amplifier Complementary Pair with 2SD2029 •Features • V ery good linearity of DC c u rre n t gain • Wide area of safety operation ASO Package Dimensions U nit : mm


    OCR Scan     		PDF 2SB1347 2SD2029 bT32fiS2 32flS5

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2029 2SD2029 Silicon Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complem entary Pair with 2 S B 1 3 4 7 U nit I mm 5.3max. 20.5max. 3.0- • Features 1 4 • V ery g o o d lin earity of DC c u r re n t gain hre


    OCR Scan     		PDF 2SD2029

    2SB1531

    Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140


    OCR Scan     		PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SB1531 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100


    OCR Scan     		PDF 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SA1185 2SB1054/2SD1485 2SB1421 2SD1457 2SD1457A 2SB1252/2SD1892 2SB1502/2SD2275