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    2SD200 Price and Stock

    JRH Electronics ZW-10-12-S-D-200-415

    STACKING BOARD CONNECTOR, ZW SER
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    DigiKey ZW-10-12-S-D-200-415 Bulk 487 1
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    JRH Electronics ZW-25-12-S-D-200-415

    STACKING BOARD CONNECTOR, ZW SER
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    DigiKey ZW-25-12-S-D-200-415 Bulk 201 1
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    JRH Electronics DWM-05-52-S-D-200

    STACKING BOARD CONNECTOR, DWM SE
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    DigiKey DWM-05-52-S-D-200 Bulk 147 1
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    JRH Electronics DWM-06-52-S-D-200

    STACKING BOARD CONNECTOR, DWM SE
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    DigiKey DWM-06-52-S-D-200 Bulk 136 1
    • 1 $4.82
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    JRH Electronics DWM-08-52-S-D-200

    STACKING BOARD CONNECTOR, DWM SE
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    DigiKey DWM-08-52-S-D-200 Bulk 96 1
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    2SD200 Datasheets (70)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD200 Various Russian Datasheets Transistor Original PDF
    2SD200 Wing Shing Computer Components NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) Original PDF
    2SD200 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2SD200 Continental Device India TO-3 Power Package Transistors Scan PDF
    2SD200 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD200 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD200 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD200 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD200 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD200 Unknown Cross Reference Datasheet Scan PDF
    2SD200 Unknown Transistor Replacements Scan PDF
    2SD200 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD200 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD200 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD200 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD200 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD200 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2000 Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD2000 Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD2000 Panasonic NPN Transistor Original PDF

    2SD200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2000

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SD2000 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High-speed switching ·Large collector power dissipation APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base


    Original     		PDF 2SD2000 O-220Fa O-220Fa) 10MHz 2SD2000

    2SD200

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SD200 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·For color TV horizontal output applications PINNING see fig.2 PIN


    Original     		PDF 2SD200 100mA; 2SD200

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2000 Silicon NPN triple diffusion planar type Unit: mm Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO


    Original     		PDF 2002/95/EC) 2SD2000

    2SD200

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SD200 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3 package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·For color TV horizontal output applications PINNING see fig.2


    Original     		PDF 2SD200 100mA; 2SD200

    2SD2000

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SD2000 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High-speed switching ·Large collector power dissipation APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base


    Original     		PDF 2SD2000 O-220Fa O-220Fa) 10MHz 2SD2000

    2SD2000

    Abstract: No abstract text available
    Text: Power Transistors 2SD2000 Silicon NPN triple diffusion planar type Unit: mm 16.7±0.3 14.0±0.5 • High-speed switching • Satisfactory linearity of forward current transfer ratio hFE • Large collector power dissipation PC • Full-pack package which can be installed to the heat sink with one


    Original     		PDF 2SD2000 2SD2000

    2SD2000

    Abstract: No abstract text available
    Text: Power Transistors 2SD2000 Silicon NPN triple diffusion planar type For power switching Unit: mm • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage


    Original     		PDF 2SD2000 2SD2000

    2SD2000

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2000 Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


    Original     		PDF 2002/95/EC) 2SD2000 SC-67 O-220F-A1 2SD2000

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2000 Silicon NPN triple diffusion planar type Unit: mm 16.7±0.3 14.0±0.5 • High-speed switching • Satisfactory linearity of forward current transfer ratio hFE • Large collector power dissipation PC • Full-pack package which can be installed to the heat sink with one


    Original     		PDF 2SD2000

    2SD200

    Abstract: No abstract text available
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR 2SD200 COLOR TV HORIZONTAL OUTPUT APPLICATIONS No Damper Diode TO-3 ! ! High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (TA=25℃ ℃) Characteristic Collector-Base Voltage


    Original     		PDF 2SD200 2SD200

    2SD2000

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2000 Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


    Original     		PDF 2002/95/EC) 2SD2000 SC-67 O-220F-A1 2SD2000

    2SD2000

    Abstract: No abstract text available
    Text: Power Transistors 2SD2000 Silicon NPN triple diffusion planar type Unit: mm Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open) VCEO 60 V Emitter-base voltage (Collector open) VEBO 6 V Collector current


    Original     		PDF 2SD2000 SC-67 O-220F-A1 2SD2000

    2SD2000

    Abstract: No abstract text available
    Text: Power Transistors 2SD2000 Silicon NPN triple diffusion planar type Unit: mm 16.7±0.3 14.0±0.5 • High-speed switching • Satisfactory linearity of forward current transfer ratio hFE • Large collector power dissipation PC • Full-pack package which can be installed to the heat sink with one


    Original     		PDF 2SD2000 2SD2000

    2SD2005

    Abstract: 1FS transistor TRANSISTOR C 369 transistor 2sD2005
    Text: 2SD2005 Transistor, NPN Features Dimensions Units : mm • available in MRT package • high collector power dissipation: Pc = 1.2 W suitable for use at low voltage because transistor has a low saturation voltage, typically V CE(sat) = 0.15 V at lc/lB = 500 mA/50 mA


    OCR Scan     		PDF 2SD2005 2SB1329 2SD2005 1FS transistor TRANSISTOR C 369 transistor 2sD2005

    2SB1330

    Abstract: 2SD2006 2sb transistor mrt package transistor 2SB
    Text: 2SB1330 Transistor, PNP Features Dimensions Units : mm • available in MRT package • high breakdown voltage and current capacity VCE0 = -80 V, lc = -0.7 A • complementary pair with 2SD2006 2SB1330 (MRT) 6.5 ± 0.2 Applications • 3.4 ±0.2 1.0 medium power amplifier and


    OCR Scan     		PDF 2SB1330 2SD2006 2SB1330 2SD2006 2sb transistor mrt package transistor 2SB

    2sd2004

    Abstract: 2SB1328 transistor 2SD2004
    Text: h ÿ > V 7 $ / I ransistors 2SD2004 2SD2004 11: £ * V NPN > U U > h -7 > V 7s $ Epitaxial Planar NPN Silicon Transistor * *> *S *1 /S /M e d iu m Power Amp. /Dimensions Unit : mm 1) * i K K T ' i > £ 0 BVcEO=160V 2) S O A tf'lA l'o 3) fT *>'•#< , C o b ^ J ^ l ' o


    OCR Scan     		PDF 2SD2004 2SD2004 2SB1328 2SB1328. 2S02004 transistor 2SD2004

    2SD2008

    Abstract: No abstract text available
    Text: h 7 > y X í ¡ /Transistors 2 S D 2 2SD2008 1 NPN y U =¡ 7> y7 Epitaxial Planar NPN Silicon Transistor Power Amp. 8 > h $ • ^ jfí'ra jlS I/D im e n s io n s Unit : mm • të ê 1) V C E O = 8 0 V t ^ L ' o 6.510.2 3.41 0.2 2) lc = 1 A £ ± È \ . 'o


    OCR Scan     		PDF 2SD2008 75BVceo 2SD2008

    2SD2009

    Abstract: hFE-15000
    Text: h "7 > V 7s $ /Transistors 2SD2009 2SD2009 * - y > b > & m Epitaxial Planar NPN Silicon Transistor (Darlington) /M e d iu m Power Amp. • £Hfi\f'iil3l/Dim ensions (Unit : mm) 1) h > f t » T ' * h FE T i > 5 o 6.5 + 0.2 3.4+0.2 hFE=15000 (Typ.) (V c e = 3V, lC= 5 00 m A )


    OCR Scan     		PDF 2SD2009 2SD2009 hFE-15000

    2SD2000

    Abstract: No abstract text available
    Text: Power Transistors 2SD2000 2SD2000 Silicon NPN Triple-Diffused Planar Type Power Switching • Features • • • • High speed sw itching Good linearity of DC cu rren t gain I Large collector pow er dissipation (Pc) “Full P ack” package for simplified m ounting on a heat sink w ith one


    OCR Scan     		PDF 2SD2000 2SD2000

    2SB1329

    Abstract: 2SD2005
    Text: 2SB1329 Transistor, PNP Features Dimensions Units : mm • available in MRT package • high power, Pc = 1.2 W • low collector saturation voltage, typically VCE(sat) = -0.2 V at Iq/I b = -500 mA/-50 mA • complementary pair with 2SD2005 2SB1329 (MRT)


    OCR Scan     		PDF 2SB1329 A/-50 2SD2005 2SB1329

    2SD2005

    Abstract: 2SD2004 2SB1482 2SB1328 2SD2010
    Text: Bipolar transistors-2SA series MRT summary Table 6 MRT general use transistors *c V (A) (A) Pc (W) (T. = 2 5 X ) 2SB1329 -3 2 -1 -2 1.2 2SB1330 -8 0 -0 .7 2SB1328 -1 6 0 -1 .5 2SB1517 -5 0 2SD2005 V CEO Application Part no. (max) * V CES h FE h FE ranking


    OCR Scan     		PDF 2SB1329 2SB1330 2SB1328 2SB1517 2SD2005 2SD2006 2SD2004 2SD2146 2SB1482 2SB1333 2SD2010

    2sd2009

    Abstract: 2sd transistors equivalent HA2000 HA-2000
    Text: 2SD2009 Transistor, NPN, Darlington Features Dimensions Units : mm • available in MRT package • Darlington connection provides high dc current gain, typically hFE = 15000 at V qe = 3 V, Iq = 500 mA • high input impedance 2SD2009 (MRT) 6.5 ± 0.2 r


    OCR Scan     		PDF 2SD2009 2SD2009 2SD2009, 2sd transistors equivalent HA2000 HA-2000

    2SD2007

    Abstract: 2SB1331
    Text: h 7 > y 7. $ / I ransistors 2SD2007 2SD2007 1 1 T V j\ s - - y %NPN > U =l> h -7> y 7 ,$ Epitaxial Planar NPN Silicon Transistor * m * > * lílf f l/M e d iu m Power Amp. • • ÿi-ffi^üO /D im ensions Unit : mm) 1) Ic m = 2 .5 A P c = 1 .2 W <r)±&t>o


    OCR Scan     		PDF 2SD2007 2SD2007 2SB1331

    2SD2037

    Abstract: 2SD2001 2SD1993 2SD1995 2sd2033 2SD1988 2SD1989 2SD1990 2SD1991A 2SD1992A
    Text: - 276 - 13=25*0, *Ep[àTc=25Tï M 2SD1988 2SD1989 2SD1990 2SD1991A 2SD1992A 2SD1993 2SD1994A 2SD1995 2SD1996 2SD1997 2SD1998 2SD1999 2SD2000 2SD2001 2SD2Q12 2SD2014 2SD20Î5 2SD2016 2SD2017 2SD2018 2SD2019 2SD2022 2SD2023 2SD2024 2SD2025 2SD2027 2SD2028


    OCR Scan     		PDF 2SD1988 2SD1989 2SD1990 2SD1991A 2SD1992A 2SD1993 2SD1994A 2SD1995 2SD2017 2SD2018 2SD2037 2SD2001 2sd2033 2SD1991A