Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SD1994A
2SB1322A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping
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2002/95/EC)
2SB1322A
2SD1994A
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2sb1322
Abstract: No abstract text available
Text: Transistor 2SB1322A Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 1.0 1.0 0.2 Allowing supply with the radial taping. 0.5 4.5±0.1 • Features ●
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2SB1322A
2SD1994A
2sb1322
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Untitled
Abstract: No abstract text available
Text: 2SD1994A NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 3.5 ±0.2 4.55±0.2 4.5±0.2 Features * Allowing Supply With The Radial Taping 14.3 ±0.2 * Low collector-Emitter Saturation Voltage VCE SAT
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2SD1994A
01-Jun-2002
200MHz
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping
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2SB1322A
2SD1994A
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2SB1322A
Abstract: 2SD1994A
Text: Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Allowing supply with the radial taping (0.5) (1.0) (0.2) 4.5±0.1 0.7 14.5±0.5 (1.0)
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2SB1322A
2SD1994A
2SB1322A
2SD1994A
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2SB1322A
Abstract: 2SD1994A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Th an W is k y Th e a pro ou Fo an po du fo
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2002/95/EC)
2SB1322A
2SD1994A
2SB1322A
2SD1994A
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2SB1322A
Abstract: 2SD1994A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 Th an W is k y
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2002/95/EC)
2SD1994A
2SB1322A
2SB1322A
2SD1994A
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2SB1322A
Abstract: 2SD1994A
Text: Transistors 2SD1994A Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 6.9±0.1 4.0 0.8 0.2 0.7 14.5±0.5 0.65 max. +0.1 2.5±0.5 3 2.5±0.1 2 +0.1 2.5±0.5 1 0.45−0.05 0.45−0.05 • Absolute Maximum Ratings Ta = 25°C Parameter 1.0 1.0 ■ Features
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2SD1994A
2SB1322A
2SB1322A
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2SD1994A
Abstract: 2SB1322A 2SD1994
Text: Transistor 2SD1994A Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SB1322A Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat .
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2SD1994A
2SB1322A
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2SB1322A
2SD1994
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2SB1322A
Abstract: 2SD1994A
Text: Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping
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2SD1994A
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2SD1994A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping
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2002/95/EC)
2SB1322A
2SD1994A
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2SB1322A
Abstract: 2SD1994A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es
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2SB1322A
2SD1994A
2SB1322A
2SD1994A
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2SB1322A
Abstract: 2SD1994A
Text: Transistor 2SB1322A Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 • Features 0.65 max. Allowing supply with the radial taping. 14.5±0.5 1.0 ● (0.5) (1.0) (0.2) 4.5±0.1 0.7 2.5±0.1
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2SB1322A
2SD1994A
55nductor
2SB1322A
2SD1994A
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2SD1994A
Abstract: 2SB1322A
Text: Transistors 2SD1994A Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 6.9±0.1 4.0 0.8 0.2 0.7 14.5±0.5 0.65 max. +0.1 2.5±0.5 3 2.5±0.1 2 +0.1 2.5±0.5 1 0.45−0.05 0.45−0.05 • Absolute Maximum Ratings Ta = 25°C Parameter 1.0 1.0 ■ Features
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2SD1994A
2SB1322A
2SD1994A
2SB1322A
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2SD1994A
Abstract: 2SB1322A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SD1994A
2SB1322A
2SD1994A
2SB1322A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)
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2SD1994A
2SB1322A
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SD1994A TRANSISTOR NPN 1. EMITTER FEATURES z Low Collector to Emitter Saturation Voltage z Complementary Pair with 2SB1322A z Allowing Supply with the Radial Taping
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2SB1322A
200MHz
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2SD1994A
Abstract: No abstract text available
Text: 2SD1994A NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z TO-92 Low collector-emitter saturation voltage VCE sat Allowing supply with the radial taping G H 1Emitter
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2SD1994A
01-December-2008
2SD1994A
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SD1994
Abstract: 2SB1322 2SB1322A 2SD1994A
Text: Panasonic 2SB1322, 2SB1322A -> [J = 1 > P N P I f ÿ d f > 7 ’ J U 7 ‘ U 2SD1994, 2SD1994A ¿ =1 >7°U • # - i ' J f i U Ä • 2SD1994, 2SD1994A t =1 y -f' ¿ ^ 7 0 • ÿ'Jr^T- ■ Ta=25°C) ; Item n V9 9 * 3 1 / ^ - Unit -3 0 2SB1322 V cbo 2SB1322A
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OCR Scan
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2SB1322,
2SB1322A
2SD1994,
2SD1994A
2SB1322
2SD1994
2SB1322A
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2SD2037
Abstract: 2SD2001 2SD1993 2SD1995 2sd2033 2SD1988 2SD1989 2SD1990 2SD1991A 2SD1992A
Text: - 276 - 13=25*0, *Ep[àTc=25Tï M 2SD1988 2SD1989 2SD1990 2SD1991A 2SD1992A 2SD1993 2SD1994A 2SD1995 2SD1996 2SD1997 2SD1998 2SD1999 2SD2000 2SD2001 2SD2Q12 2SD2014 2SD20Î5 2SD2016 2SD2017 2SD2018 2SD2019 2SD2022 2SD2023 2SD2024 2SD2025 2SD2027 2SD2028
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2SD1988
2SD1989
2SD1990
2SD1991A
2SD1992A
2SD1993
2SD1994A
2SD1995
2SD2017
2SD2018
2SD2037
2SD2001
2sd2033
2SD1991A
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