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    Rochester Electronics LLC 2SD1997-TD-E

    BIP NPN 3A 30V
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    DigiKey 2SD1997-TD-E Bulk 10,000 1,268
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    Panasonic Electronic Components 2SD1992A0A

    TRANS NPN 50V 0.5A MT-1-A1
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    DigiKey 2SD1992A0A Ammo Pack
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    Panasonic Electronic Components 2SD1991ARA

    TRANS NPN 50V 0.1A MT-1-A1
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    DigiKey 2SD1991ARA Ammo Pack 4,000
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    Panasonic Electronic Components 2SD1994ASA

    TRANS NPN 50V 1A MT-2-A1
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    DigiKey 2SD1994ASA Ammo Pack 2,000
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    Panasonic Electronic Components 2SD1991A0A

    TRANS NPN 50V 0.1A MT-1-A1
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    DigiKey 2SD1991A0A Ammo Pack 4,000
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    2SD199 Datasheets (127)

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    Description
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    Datasheet Type
    PDF
    2SD199 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD199 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD199 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD199 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD199 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD199 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD199 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD199 Unknown Silicon NPN Triple Diffused Mesa Transistor Scan PDF
    2SD199 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD199 Unknown Scan PDF
    2SD199 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD199 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD199 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1990 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1990 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1990 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1990 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1990 Panasonic Silicon NPN Triple-Diffused Planar Type / Power Switching Scan PDF
    2SD1990 Panasonic Silicon Medium Power Transistors Scan PDF
    2SD1990P Panasonic Silicon NPN Triple Diffused Power Transistors Scan PDF
    ...

    2SD199 Datasheets Context Search

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    PDF

    Untitled

    Abstract: No abstract text available
    Text: O rd e rin g n u m b e r : EN 3 1 7 5 2SB1325/2SD1999 No.3175 S A \Y O PNP/NPN Epitaxial Planar Silicon Transistors i Compact Motor Driver Applications F e a tu re s • Low saturation voltage •Contains diode between collector and em itter • Contains bias resistance between base and em itter


    OCR Scan     		2SB1325/2SD1999 2SB1325 250mm2x 150mA 7149MO PDF

    2SD1990

    Abstract: IC003
    Text: 2SD1990 Power Transistors 2SD1990 Silicon NPN Triple-Diffused Planar Type Power Switching Package Dimensions U n it ! m m • Features • High speed switching • Good linearity of DC current gain I ì f e • Large collector power dissipation (Pc) ,10.5 + 0.5


    OCR Scan     		2SD1990 O-220 bT32052 2SD1990 IC003 PDF

    2SB1325

    Abstract: 2SD1999
    Text: Ordering number : ENN3175A 2SB1325 / 2SD1999 PNP / NPN Epitaxial Planar Transistors 2SB1325 / 2SD1999 Compact Motor Driver Applications Features • • • • Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter.


    Original     		ENN3175A 2SB1325 2SD1999 2SD1999] 25max 2SB1325 2SD1999 PDF

    2SB1324

    Abstract: 2SD1998
    Text: Ordering number:EN3130 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1324/2SD1998 Compact Motor Driver Applications Features Package Dimensions • Low saturation voltage. · Contains diode between collector and emitter. · Contains bias resistance between collector and


    Original     		EN3130 2SB1324/2SD1998 2SB1324/2SD1998] 2SB1324 2SB1324 2SD1998 PDF

    2SB1323

    Abstract: 2SD1997
    Text: Ordering number:EN3129 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1323/2SD1997 Compact Motor Driver Applications Features Package Dimensions • Contains input resistance R1 , base-to-emitter resistance (RBE). · Contains diode between collector and emitter.


    Original     		EN3129 2SB1323/2SD1997 2SB1323/2SD1997] 2SB1323 2SB1323 2SD1997 PDF

    LLO14

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1322 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SD1994 • Package M Di ain sc te on na tin nc ue e/ d  Features  Allowing supply with the radial taping


    Original     		2002/95/EC) 2SB1322 2SD1994 LLO14 PDF

    2sb132

    Abstract: 2A marking 2SB1324 2SD1998 ITR09586 ITR09587 ITR09588
    Text: 2SB1324 / 2SD1998 Ordering number : EN3130A SANYO Semiconductors DATA SHEET 2SB1324 / 2SD1998 PNP / NPN Epitaxial Planar Silicon Transistors Compact Motor Driver Applications Features • • • • • Low saturation voltage. Contains diode between collector and emitter.


    Original     		2SB1324 2SD1998 EN3130A 2SB1324 2sb132 2A marking 2SD1998 ITR09586 ITR09587 ITR09588 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1996 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 6.9±0.1 (4.0) (0.7) 2.5±0.1 (0.8) • Low collector-emitter saturation voltage VCE(sat)


    Original     		2002/95/EC) 2SD1996 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features


    Original     		2002/95/EC) 2SB1321A 2SD1992A 60nteed PDF

    2SD1995

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1995 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Unit: mm 6.9±0.1 (4.0) (0.7) 2.5±0.1 (0.8) • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)


    Original     		2002/95/EC) 2SD1995 2SD1995 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)


    Original     		2002/95/EC) 2SD1994A 2SB1322A PDF

    2SB1321A

    Abstract: 2SD1992A
    Text: Transistor 2SB1321A Silicon PNP epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 0.15 ● Allowing supply with the radial taping. Large collector power dissipation PC. 600mW 1.0 ●


    Original     		2SB1321A 2SD1992A 600mW) 2SB1321A 2SD1992A PDF

    transistor 2sd1996

    Abstract: 2SD1996
    Text: Transistor 2SD1996 Silicon NPN epitaxial planer type Unit: mm 6.9±0.1 1.05 2.5±0.1 1.45 ±0.05 0.8 4.0 0.8 0.15 0.7 ● 0.85 +0.1 0.45–0.05 2.5±0.5 2.5±0.5 +0.1 ● 14.5±0.5 ● 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron.


    Original     		2SD1996 transistor 2sd1996 2SD1996 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping


    Original     		2002/95/EC) 2SB1322A 2SD1994A PDF

    2sb1322

    Abstract: No abstract text available
    Text: Transistor 2SB1322A Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 1.0 1.0 0.2 Allowing supply with the radial taping. 0.5 4.5±0.1 • Features ●


    Original     		2SB1322A 2SD1994A 2sb1322 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1997 Features Contains diode between collector and emitter. Low saturation voltage. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25


    Original     		2SD1997 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1994A NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 3.5 ±0.2 4.55±0.2 4.5±0.2 Features * Allowing Supply With The Radial Taping 14.3 ±0.2 * Low collector-Emitter Saturation Voltage VCE SAT


    Original     		2SD1994A 01-Jun-2002 200MHz PDF

    smd ic marking 1A

    Abstract: 2SD1997 MARKING SMD npn TRANSISTOR 1a
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1997 Features Contains diode between collector and emitter. Low saturation voltage. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25


    Original     		2SD1997 smd ic marking 1A 2SD1997 MARKING SMD npn TRANSISTOR 1a PDF

    smd transistor MARKING 2A npn

    Abstract: TRANSISTOR MARKING DM npn smd 2a smd diode marking 2a TRANSISTOR MARKING DM W SMD TRANSISTOR MARKING 2v 2SD1998 NPN MARKING 2A transistor marking 2a MARKING DM
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1998 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide highdensity,


    Original     		2SD1998 100mA smd transistor MARKING 2A npn TRANSISTOR MARKING DM npn smd 2a smd diode marking 2a TRANSISTOR MARKING DM W SMD TRANSISTOR MARKING 2v 2SD1998 NPN MARKING 2A transistor marking 2a MARKING DM PDF

    2SD1994

    Abstract: 2SB1322 2SB1322A 2SD1994A
    Text: Panasonic 2SB1322, 2SB1322A -> [J = 1 > P N P I f ÿ d f > 7 ’ J U 7 ‘ U 2SD1994, 2SD1994A ¿ =1 >7°U • # - i ' J f i U Ä • 2SD1994, 2SD1994A t =1 y -f' ¿ ^ 7 0 • ÿ'Jr^T- ■ Ta=25°C) ; Item n V9 9 * 3 1 / ^ - Unit -3 0 2SB1322 V cbo 2SB1322A


    OCR Scan     		2SB1322, 2SB1322A 2SD1994, 2SD1994A 2SB1322 2SD1994 2SB1322A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features


    Original     		2002/95/EC) 2SB1321A 2SD1992A PDF

    2SD1993

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1993 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Unit: mm 6.9±0.1 (4.0) (0.7) 2.5±0.1 (0.8) • Low noise voltage NV • High forward current transfer ratio hFE


    Original     		2002/95/EC) 2SD1993 2SD1993 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features • High forward current transfer ratio hFE


    Original     		2002/95/EC) 2SD1991A 2SB1320A PDF

    2SD1993

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1993 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Unit: mm 6.9±0.1 (4.0) (0.7) 2.5±0.1 (0.8) • Low noise voltage NV • High forward current transfer ratio hFE


    Original     		2002/95/EC) 2SD1993 2SD1993 PDF