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    2SD151 Search Results

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    2SD1513-T-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SD1513-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
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    2SD151 Price and Stock

    Panasonic Electronic Components 2SD15110RL

    TRANS NPN DARL 80V 1A MINIP3-F1
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    DigiKey 2SD15110RL Reel 1,000
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    2SD15110RL Digi-Reel 1
    • 1 $1.26
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    2SD15110RL Cut Tape 1
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    TAIYO YUDEN QMK212SD151KD-T

    CAP CER 150PF 250V 0805
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    Avnet Americas QMK212SD151KD-T Reel 4,000
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    Mouser Electronics QMK212SD151KD-T
    • 1 $0.26
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    • 100 $0.098
    • 1000 $0.064
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    Sunlord SDVL4532SD151PTHS501

    VARISTOR 180V 300A 1812
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    DigiKey SDVL4532SD151PTHS501 Reel 4,000
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    Panasonic Electronic Components 2SD1511

    1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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    Quest Components 2SD1511 20
    • 1 $5.4
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    2SD151 Datasheets (81)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD151 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD151 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD151 Unknown Cross Reference Datasheet Scan PDF
    2SD151 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD151 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD151 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD151 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD151 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD151 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD151 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD151 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD151 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1510 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1510 Unknown Cross Reference Datasheet Scan PDF
    2SD1510 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1510 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1510 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1510 Panasonic Silicon PNP Triple Diffused Planar Darlington Power Transistor Scan PDF
    2SD1511 Panasonic NPN Transistor darlington Original PDF
    2SD1511 Panasonic Silicon NPN epitaxial planer type darlington Original PDF

    2SD151 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SB1068 TRANSISTOR PNP 1. EMITTER FEATURES z Low Collector Saturation Voltage z High DC Current Gain z High Collector Power Dissipation z Complementary To The 2SD1513 NPN Transistor


    Original     		PDF 2SB1068 2SD1513 -10mA -20mA -75mA -50mA

    2SD1511G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511G Silicon NPN epitaxial planar type darlington For low-frequency output amplification • Package ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4 000


    Original     		PDF 2002/95/EC) 2SD1511G 2SD1511G

    2SD1511

    Abstract: power darlington npn transistor
    Text: Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency output amplification ● 0.5±0.08 1.5±0.1 2.5±0.1 0.4±0.04 3.0±0.15 3 • Absolute Maximum Ratings +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE


    Original     		PDF 2SD1511 2SD1511 power darlington npn transistor

    2SD1511

    Abstract: No abstract text available
    Text: Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency output amplification 4.5±0.1 ● • * 1.5±0.1 Parameter Symbol Ratings Unit VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current


    Original     		PDF 2SD1511 2SD1511

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors 2SD1513 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. EMITTER PCM: 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current 2 A ICM: Collector-base voltage 20 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF 2SD1513 100mA

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511G Silicon NPN epitaxial planar type darlington For low-frequency output amplification • Package ■ Features • Code MiniP3-F2 • Pin Name 1: Base 2: Collector 3: Emitter


    Original     		PDF 2002/95/EC) 2SD1511G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification 4.5±0.1 1.6±0.2 1.5±0.1 Symbol Rating Collector-base voltage (Emitter open) VCBO


    Original     		PDF 2002/95/EC) 2SD1511

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD1511 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification 4.5±0.1 ● • * 1.5±0.1 Parameter Symbol Ratings Unit VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current


    Original     		PDF 2SD1511

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SD1513 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. EMITTER PCM: 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current 2 A ICM: Collector-base voltage 20 V V(BR)CBO:


    Original     		PDF 2SD1513 100mA

    2SD1512

    Abstract: No abstract text available
    Text: Transistor 2SD1512 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 3.0±0.2 Allowing supply with the radial taping. High foward current transfer ratio hFE. marking Ta=25˚C Parameter Symbol Ratings Unit 100 V 100 V 15 V 50 mA 20


    Original     		PDF 2SD1512 2SD1512

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD1512 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 3.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage


    Original     		PDF 2SD1512

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SD1513 TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z Low Collector Saturation z High DC Current Gain z Complementary to The 2SB1068 PNP Transistor 3. BASE


    Original     		PDF 2SD1513 2SB1068 100mA

    2SD1511G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511G Silicon NPN epitaxial planar type darlington For low-frequency output amplification • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Marking Symbol: P ■ Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SD1511G 2SD1511G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification 4.5±0.1 1.6±0.2 Parameter Symbol Rating Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SD1511

    2SD1516

    Abstract: ic 746
    Text: P o w er T ra n s is to rs 2SD1516 2SD1516 Silicon NPN Epitaxial Planar Type Package D im ensions Pow er A m plifier, Pow er S w itching 10.5 1 0 .5 • Features • Low co llector-em itter satu ration vo ltag e VcEisao • Good linearity of DC cu rrent gain (hFE)


    OCR Scan     		PDF 2SD1516 SC-46 O-220 2SD1770/A) QGlb747 2SD1516 ic 746

    2SD1510

    Abstract: ATL2 743 ic
    Text: Pow er T ransistors 2SD1510 2SD1510 Silicon PNP Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier • Features • High DC cu rren t gain hps 2.9max. • High speed switching • “Full Pack” package for simplified mounting on a heat sink with one


    OCR Scan     		PDF 2SD1510 O-220 bR32fi52 2SD1510 ATL2 743 ic

    2SD1510

    Abstract: 743p 44max
    Text: Power Transistors 2SD1510 2SD1510 Silicon PNP Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier U n it r m m 4 .4 m a x . • Features • High DC cu rren t gain hra 2.9max • High speed switching • “Full P ack” package for simplified m ounting on a h eat sink with one


    OCR Scan     		PDF 2SD1510 0Dlb74S 2SD1510 743p 44max

    2SD1480

    Abstract: 2SD1517
    Text: Pow er T ra nsistors 2SD1517 2SD 1517 Silicon NPN Epitaxial Planar Type Package Dimensions Power Amplifier, Power Switching • Features U n i t I mm 4.4m ax. • Low collector-em itter saturation voltage VcE(sao 2.9 ma\ I • Good linearity of DC current gain (h ^ )


    OCR Scan     		PDF 2SD1517 10MHz --50mA, 2SD1480 2SD1517

    1271A

    Abstract: nec 1251 2SB2198 2SD1227M 2sd1070 2SC4008 2SD2394 2SD1593 2sd1855 2sd1944
    Text: - S « Type No. tt 2SD 1243 » 2SD 1243A T 2SD 1245 fé fé fé 2S0 1246 H W 2SD 1247 y =- 2SD 1248 . 2SD 1244 « Manuf. H n SANYO T 2SD1064 T 2SD1064 Ä $ TOSHIBA a NEC B ÌL HITACHI □ MITSUBISHI h, ROHM 2SD1962M 2SC32S6 2SD1196 i 2SD1227M 2SD965 2SD1513


    OCR Scan     		PDF 2SD1243 2SD1243A 2SD1244 2SD1245 2SD1246 2SD1247 2SD1248 2SD1248K 2SD1251 2SD1252 1271A nec 1251 2SB2198 2SD1227M 2sd1070 2SC4008 2SD2394 2SD1593 2sd1855 2sd1944

    2SD1480

    Abstract: 2SD1517
    Text: Power Transistors 1 ^ 3 2 0 5 4 0 0 1 1 15 7 347 « P N C E PANASONIC INDL/ELEK SEMI 2SD1517 2SD1517 fc.'iE D Silicon NPN Epitaxial Planar Type Package Dim ensions Pow er Amplifier, Pow er Switching • • • • • U n it ! mm 4.4m ax. 10.2m ax. • Features


    OCR Scan     		PDF 2SD1517 2SD1480) 2SD1480 2SD1517

    2SB1068

    Abstract: 2SD1513 PA33
    Text: NPN SILICON TRANSISTOR 2SD1513 D E S C R IP TIO N The 2S D 1513 is designed for use in driver and output stages of PAC KAG E D IM E N S IO N S audio frequency amplifiers. in millimeters inches FEATURES • Low Collector Saturation Voltage 5.2 MAX. V c E (s a t) : 0.2 0 V T Y P . ( Ic = 1 .0 A , l B = 1 0 m A )


    OCR Scan     		PDF 2SD1513 2SD1513 2SB1068 PA33

    5n5o

    Abstract: No abstract text available
    Text: 2SD1519O Ä 7 T u \z “ \_r . rnm 16. o MAX. 4# m iS i t EE "C'ÿ o :V q b q = i 4 0 0 V • : ^CE s a t ~ 5 V ( * * ) <äiö*£E^ ^o 0 3 .6 ± o . 2 1.5 ( I c = 8A , IQ — 2 A ) ^ 'í '7 f : t f - 1.0 a 1/ ? £ * ÍbJ i f i ¿1 y * ß s (ift^ ) ( I c p = 7 A , l B 2 ( e n d -) ^ A )


    OCR Scan     		PDF

    J6 transistor

    Abstract: 2SD1513 PA33 2sb1068 2sb10681
    Text: NEC j Silicon Transistor 2SD1513 NPNxfc NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier #* /FEA TUR ES *fffi£IU/PACKAGE DIMENSIONS o \&W±jzWimMM]cn> ^ — 9 — Y 7 4 7\ v v 4 -rm k7 U nit: mm j K K7-f 7"%f, & t i m h FEX l& = > u 7 ^ S & f t l l c l l t r f o


    OCR Scan     		PDF 2SD1513 2SB10681 PWS10 J6 transistor 2SD1513 PA33 2sb1068

    2SD1516

    Abstract: No abstract text available
    Text: Power Transistors • ^32854 0011155 574 « P N C E PANASONIC INDL/ELEK SEMI 2SD1516 2SD1516 b'ÍE D Silicon NPN Epitaxial Planar Type Package Dim ensions Pow er Amplifier, Pow er Switching 10.5 + 0.5 ■ Features • L ow c o lle c to r-e m itte r sa tu ra tio n v o lta g e (VcE<sat>)


    OCR Scan     		PDF 2SD1516 2SD1516 Tc-25Â 2SD1770/A)