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    2SD147 Search Results

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    2SD147 Price and Stock

    Rochester Electronics LLC 2SD1472CTTR

    SMALL SIGNAL BIPOLAR TRANSTR NPN
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    DigiKey 2SD1472CTTR Bulk 8,000 812
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    Panasonic Electronic Components 2SD14740P

    TRANS NPN 60V 6A TO220F-A1
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    Panasonic Electronic Components 2SD1478ARL

    TRANS NPN DARL 50V 0.5A MINI3
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    DigiKey 2SD1478ARL Reel 3,000
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    Renesas Electronics Corporation 2SD1472CTTR

    - Bulk (Alt: 2SD1472CTTR)
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    Avnet Americas 2SD1472CTTR Bulk 4 Weeks 977
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    Quest Components 2SD1472CTTR 21,939
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    Rochester Electronics 2SD1472CTTR 8,000 1
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    Panasonic Corporation 2SD1475

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    Quest Components 2SD1475 3
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    2SD147 Datasheets (97)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD147 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD147 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD147 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD147 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD147 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD147 Unknown Cross Reference Datasheet Scan PDF
    2SD147 Unknown Transistor Replacements Scan PDF
    2SD147 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD147 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD147 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD147 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD147 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD147 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD1470 Hitachi Semiconductor Silicon NPN Darlington Transistor Original PDF
    2SD1470 Hitachi Semiconductor Silicon NPN Epitaxial, Darlington Original PDF
    2SD1470 Renesas Technology Silicon NPN Epitaxial, Darlington Original PDF
    2SD1470 Renesas Technology Silicon NPN Epitaxial, Darlington Transistor Original PDF
    2SD1470 Renesas Technology Silicon NPN Epitaxial, Darlington Original PDF
    2SD1470 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1470 Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    2SD147 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1470

    Abstract: DSA003638
    Text: 2SD1470 Silicon NPN Epitaxial, Darlington ADE-208-1153 Z 1st. Edition Mar. 2001 Application Low frequency power amplifier Outline UPAK 1 3 2 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 1 3 2SD1470 Absolute Maximum Ratings (Ta = 25°C) Item


    Original     		PDF 2SD1470 ADE-208-1153 2SD1470 DSA003638

    Hitachi DSA002756

    Abstract: No abstract text available
    Text: 2SD1471 Silicon NPN Planar, Darlington Application High gain amplifier Outline 2SD1471 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 10


    Original     		PDF 2SD1471 Hitachi DSA002756

    2SD1472

    Abstract: DSA003730
    Text: 2SD1472 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline UPAK 2 1 3 2 1 4 1. Base 2. Collector 3. Emitter 4. Collector Flange ID 2 kΩ (Typ) 0.5 kΩ (Typ) 3 2SD1472 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings


    Original     		PDF 2SD1472 2SD1472 DSA003730

    2SD1478

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1478 Silicon NPN epitaxial planar type darlington For low-frequency amplification • Package • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer


    Original     		PDF 2002/95/EC) 2SD1478 2SD1478

    2SD1478

    Abstract: 2SD1478A
    Text: Transistors 2SD1478, 2SD1478A Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency amplification 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 Parameter 1.9±0.1 0.4±0.2 0.65 2 1 (0.95) (0.95) ■ Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SD1478, 2SD1478A 2SD1478 2SD1478 2SD1478A

    2SD1470

    Abstract: Hitachi DSA00386
    Text: 2SD1470 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline UPAK 1 3 2 2 4 1. Base 2. Collector 3. Emitter 4. Collector Flange 1 3 2SD1470 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage


    Original     		PDF 2SD1470 2SD1470 Hitachi DSA00386

    2SD1472

    Abstract: 2SD1472CTTR-E
    Text: 2SD1472 Silicon NPN Epitaxial, Darlington REJ03G0792-0200 Previous ADE-208-1155 Rev.2.00 Aug.10.2005 Application Low frequency power amplifier Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange)


    Original     		PDF 2SD1472 REJ03G0792-0200 ADE-208-1155) PLZZ0004CA-A 2SD1472 2SD1472CTTR-E

    2SD1472

    Abstract: DSA003638
    Text: 2SD1472 Silicon NPN Epitaxial, Darlington ADE-208-1155 Z 1st. Edition Mar. 2001 Application Low frequency power amplifier Outline UPAK 2 1 3 2 1 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) ID 2 kΩ (Typ) 0.5 kΩ (Typ) 3 2SD1472 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SD1472 ADE-208-1155 2SD1472 DSA003638

    2SD1475

    Abstract: No abstract text available
    Text: Power Transistors 2SD1475 Silicon NPN triple diffusion planar type For power switching Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage


    Original     		PDF 2SD1475 2SD1475

    2SD1474

    Abstract: No abstract text available
    Text: Power Transistors 2SD1474 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio Unit: mm 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage


    Original     		PDF 2SD1474 2SD1474

    Vbe 8 V

    Abstract: 2SD1478 2SD1478A
    Text: Transistors 2SD1478, 2SD1478A Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency amplification 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 Parameter 1.9±0.1 0.65 2 1 (0.95) (0.95) ■ Absolute Maximum Ratings Ta = 25°C 0.4±0.2


    Original     		PDF 2SD1478, 2SD1478A 2SD1478 Vbe 8 V 2SD1478 2SD1478A

    2SD1478

    Abstract: 2SD1478A
    Text: Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 Symbol Collector to 2SD1478 base voltage 2SD1478A Collector to 2SD1478 Ratings 30 VCBO


    Original     		PDF 2SD1478, 2SD1478A 2SD1478 omi01 2SD1478 2SD1478A

    2SD1479

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SD1479 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high reliability ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications


    Original     		PDF 2SD1479 2SD1479

    Hitachi DSA002756

    Abstract: No abstract text available
    Text: 2SD1472 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline 2SD1472 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage


    Original     		PDF 2SD1472 Hitachi DSA002756

    2SD1474

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1474 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SD1474 2SD1474

    2SD1474

    Abstract: No abstract text available
    Text: Power Transistors 2SD1474 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio 16.7±0.3 • High forward current transfer ratio hFE which has satisfactory linearity • High emitter-base voltage Collector open VEBO


    Original     		PDF 2SD1474 2SD1474

    2SD1470

    Abstract: 2SD1470ATTR-E RENESAS marking code
    Text: 2SD1470 Silicon NPN Epitaxial, Darlington REJ03G0791-0200 Previous ADE-208-1153 Rev.2.00 Aug.10.2005 Application Low frequency power amplifier Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 2 4 1 1. Base 2. Collector 3. Emitter


    Original     		PDF 2SD1470 REJ03G0791-0200 ADE-208-1153) PLZZ0004CA-A 2SD1470 2SD1470ATTR-E RENESAS marking code

    E5 ic

    Abstract: 2SD1479 SC-65 TOP3 package
    Text: Power Transistors 2SD1479 2SD 1479 Silicon N PN Triple-D iffused Junction M esa Type Package D im ensions Horizontal D eflection O utput U n it ! m m 1 5 .5 m a x • Features 4 .7 m a x . • High breakdow n voltage and high reliability by glass passivation


    OCR Scan     		PDF 2SD1479 75kHz DDlb737 E5 ic 2SD1479 SC-65 TOP3 package

    2SD1479

    Abstract: SC-65
    Text: Power Transistors • b^asn ddiiims b2s « p n c e PANASONIC INDL/ELEKC SEMI 2SD1479 2s d i 479 b'ìE ]> Silicon NPN Triple-Diffused Junction Mesa Type Package Dim ensions H orizontal Deflection Output ■ Features ~ 1 5 .5 m a x . +1 1 3 .5 m a x . • High breakdow n voltage and high reliability by glass passivation


    OCR Scan     		PDF D01114S 2SD1479 2SD1479 SC-65

    2SD1475

    Abstract: No abstract text available
    Text: Rower Transistors I 1^32054 0011143 ÔS2 WPNC g 2SD1475 PANASONIC IND L/E LE K SEMI 2SD1475 b^E ]> Silicon NPN Triple-Diffused Planar Type P a ck a ge D im ension s P o w e r S w itch ing • Features U n it ’ mm 4 .4 m a x . 1 0.2m ax. • High speed switching


    OCR Scan     		PDF 2SD1475 2SD1475 2SD1266/A)

    OF IC 733

    Abstract: 2SD1475
    Text: P ow er Tra n sisto rs 2SD1475 2SD1475 Silicon NPN Triple-Diffused Planar Type P ack age D im ension s P o w e r S w itch ing • Fe a tu re s • High speed switching • Good linearity of DC cu rre n t gain h FF. • L arge collector pow er dissipation (P<_)


    OCR Scan     		PDF 2SD1475 100X2mm OF IC 733 2SD1475

    2SD1470

    Abstract: No abstract text available
    Text: 2SD1470 Silicon NPN Epitaxial, Darlington HITACHI Application Low frequency power amplifier Outline UPAK 1. Base 2. Collector 3. Emitter 4. Collector Flange 940 1 o- •C 2SD1470 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage


    OCR Scan     		PDF 2SD1470 2SD1470

    948 LG DIODE

    Abstract: No abstract text available
    Text: 2SD1472 Silicon NPN Epitaxial, Darlington HITACHI Application Low frequency power amplifier Outline UPAK 2 O 1 o1. 2. 3. 4. 948 Base Collector Emitter Collector Flange C — W v- 2kn (Typ) -VvV 0.5 kn (Typ) 2SD1472 Absolute Maximum Ratings (Ta = 25°C) Item


    OCR Scan     		PDF 2SD1472 948 LG DIODE

    Untitled

    Abstract: No abstract text available
    Text: 2SD1471 Silicon NPN Planar, Darlington HITACHI Application High gain amplifier Outline UPAK 2 o 1. 2. 3. 4. Base Collector Emitter Collector Flange tCZ-? ^ o 3 944 2SD1471 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage


    OCR Scan     		PDF 2SD1471