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    2SD138 Search Results

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    2SD138 Price and Stock

    Rochester Electronics LLC 2SD1388TP-4-SY

    NPN EPITAXIAL PLANAR SILICON
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    ROHM Semiconductor 2SD1383KT146B

    TRANS NPN DARL 32V 0.3A SMT3
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    2SD1383KT146B Reel 3,000
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    Verical 2SD1383KT146B 6,000 432
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    2SD1383KT146B 2,987 81
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    RS 2SD1383KT146B Bulk 30
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    Ameya Holding Limited 2SD1383KT146B 100 1
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    Chip1Stop 2SD1383KT146B Cut Tape 2,987
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    CoreStaff Co Ltd 2SD1383KT146B 6,000
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    2SD1383KT146B 535
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    New Advantage Corporation 2SD1383KT146B 2,354 1
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    JRH Electronics TW-10-02-S-D-138-100

    STACKING BOARD CONNECTOR, TW SER
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    DigiKey TW-10-02-S-D-138-100 Bulk 196
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    onsemi 2SD1388TP-3

    TRANSISTOR NPN
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    Rochester Electronics 2SD1388TP-3 258,000 1
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    onsemi 2SD1388TP-4

    TRANSISTOR NPN
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    Rochester Electronics 2SD1388TP-4 132,000 1
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    2SD138 Datasheets (87)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD138 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD138 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD138 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD138 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD138 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD138 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD138 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD138 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD138 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD138 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD138 Unknown Cross Reference Datasheet Scan PDF
    2SD1380 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1380 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1380 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1380 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1380 Unknown Cross Reference Datasheet Scan PDF
    2SD1380 ROHM CPT, TO-126, TO-126FP Transistors Scan PDF
    2SD1380 ROHM Scan PDF
    2SD1380 ROHM CPT / TO-126 / TO-126FP Transistors Scan PDF
    2SD1381 Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    2SD138 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB852K

    Abstract: 2SD1383K T146
    Text: 2SB852K Transistors High-gain Amplifier Transistor −32V, −0.3A 2SB852K zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K. 2SB852K


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    PDF 2SB852K 2SD1383K. 2SB852K 2SD1383K T146

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD1385 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 2.5±0.1 ● ● 1.0 (0.85) 0.45±0.05 * (Ta=25˚C) 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 400 V Collector to emitter voltage


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    PDF 2SD1385

    2SB852K

    Abstract: 2SD1383K
    Text: High-gain Amplifier Transistor 32V , 0.3A 2SD1383K Features 1) Darlington connection for high DC current gain. 2) Built-in 4k resistor between base and emitter. 3) Complements the 2SB852K. Dimensions (Unit : mm) 2SD1383K Packaging specifications


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    PDF 2SD1383K 2SB852K. 2SD1383K R1120A 2SB852K

    2SD1385

    Abstract: No abstract text available
    Text: Transistors 2SD1385 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 2.5±0.1 1.0 (1.0) R 0.9 2.0±0.2 R 0.7 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C 4.5±0.1 3.5±0.1 (1.5) 1.0±0.1 • High collector-base voltage (Emitter open) VCBO


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    PDF 2SD1385 2SD1385

    4606

    Abstract: 2SD1383K MJE447 Darlington npn darlington 1384 5000E-9
    Text: SPICE PARAMETER 2SD1383K * 2SD1383K DARLINGTON NPN BJT model * Date: 2006/12/13 *C B E .SUBCKT 2SD1383K 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 1.350 R1 4 3 4k .MODEL Q1model NPN + IS=30.00E-15 + BF=400 + VAF=50 + IKF=.1221 + ISE=30.00E-15


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    PDF 2SD1383K 2SD1383K 00E-15 737E-12 298E-3 650E-12 0E-12 346E-12 4606 MJE447 Darlington npn darlington 1384 5000E-9

    Untitled

    Abstract: No abstract text available
    Text: 2SB852K Transistors High-gain Amplifier Transistor −32V, −0.3A 2SB852K zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K. 2SB852K


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    PDF 2SB852K 2SD1383K. 2SB852K

    Untitled

    Abstract: No abstract text available
    Text: 2SB852K Transistors High-gain Amplifier Transistor −32V, −0.3A 2SB852K External dimensions (Unit : mm) Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K. 2SB852K


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    PDF 2SB852K 2SD1383K.

    2SD1385

    Abstract: No abstract text available
    Text: Transistors 2SD1385 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm • Features 2.5±0.1 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation *


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    PDF 2SD1385 2SD1385

    2SD1383

    Abstract: 2SA830S 2SB852K 2SC1645S 2SD1383K
    Text: Transistors 2SB852K / 2SA830S 2SD1383K / 2SC1645S 96-118-B20 (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the


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    PDF 2SB852K 2SA830S 2SD1383K 2SC1645S 96-118-B20) 96-205-D20) 2SD1383 2SA830S 2SC1645S

    2SA830S

    Abstract: 2SB852K 2SC1645S 2SD1383K
    Text: Transistors 2SB852K / 2SA830S 2SD1383K / 2SC1645S 96-118-B20 (96-205-D20) 280


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    PDF 2SB852K 2SA830S 2SD1383K 2SC1645S 96-118-B20) 96-205-D20) 2SA830S 2SC1645S

    2SA830S

    Abstract: 2SB852K 2SD1383K 2SD1645S T146
    Text: 2SB852K / 2SA830S Transistors High-gain Amplifier Transistor −32V, −0.3A 2SB852K / 2SA830S zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K / 2SD1645S.


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    PDF 2SB852K 2SA830S 2SD1383K 2SD1645S. 2SB852K 15Min. 2SA830S 2SD1645S T146

    2SD852

    Abstract: 2SD1383K 2SA830S 2SC1645S T146 2SD852K
    Text: 2SD1383K / 2SC1645S Transistors High-gain Amplifier Transistor 32V , 0.3A 2SD1383K / 2SC1645S zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD852K / 2SA830S. zExternal dimensions (Unit : mm)


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    PDF 2SD1383K 2SC1645S 2SD852K 2SA830S. 2SD1383K 15Min. 2SD852 2SA830S 2SC1645S T146

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F ►External dim ensions (Units: mm) •F e a tu re s 1) High V ceo. V = 80V ceo 2SD1898 2) High IC. Ic = 1 A (D C ) 3) G ood hre linearity. 4) c + 0 .2 5 - 0.1 1.6 ± 0.1


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    PDF 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F 2SD1898 1260/2S 2SB1181. SC-62 2SD1768S 2SD1733 2SD1863) 2SD1898) 2SD1381F)

    Untitled

    Abstract: No abstract text available
    Text: 2SD1383K h "7 > y 7. $ / J ransistors Xt:^^rV7^7V—^-ff^-/N-$-:E-;UKNPN y 'J-1 > & - 2SD1383K V _ > h > h 7 > y Z $ r a i i t e & 7 - i " j 3 - > 7 f f l/ H i g h G a in A m p . & S w itc h in g Epitaxial Planar Super Mini-Mold NPN Silicon Darlington Transistor


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    PDF 2SD1383K 100mA) 95Q95| 00oos

    Untitled

    Abstract: No abstract text available
    Text: h 7 > y 7 ^ / T ransistors 2SD1382 7V - ^ NPN v U = l> Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • fc g • El/D im en sion s U nit: mm V r > J V :V d i- 7 - 1) vCEo = 8 0 V t ra i ' o 2) lc = 1 A 3) h FECO ') ~ T ') t - -f fr'& b 'o 4 ) V c e ( sat


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    PDF 2SD1382 WE814

    Transistor 126m

    Abstract: 2SD1381 QS 100 NPN Transistor
    Text: RO HM CO LTD 40E D -ir 7020= =]=] OOOSflbO 7 B R H M m /Transistors 2SD1381 - 7 ^ 3 3 - OS' 2 S D 1 3 S 1 '> u = i> Freq. Power Amp. npn Epitaxial Planar NPN Silicon Transistor •


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    PDF 73QDOSflbO 2SD1381 23D13S1 80Vro T-33-05 Transistor 126m 2SD1381 QS 100 NPN Transistor

    2SD852K

    Abstract: No abstract text available
    Text: 2SB852K / 2SA830S 2SD1383K / 2SC1645S Transistors I High-gain Amplifier Transistor —32V, —0.3A 2SB852K / 2SA830S •F e a tu re s 1 ) Darlington connection fo r high DC current gain. 2 ) Built-in 4 k Q resistor between base and emitter. 3 ) Complements the 2SDl383Ki'2SD1645S.


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    PDF 2SB852K 2SA830S 2SD1383K 2SC1645S --32V, 2SA830S 2SDl383Ki 2SD852K

    2SD1384

    Abstract: ST-103 2Sb1010 transistor
    Text: / T ransistors 2SD1384 2SD1384 7^1/7 l ^ - ^ N P N y'j=i> b y > y Z 2 I If Epitaxial Planar NPN Silicon Transistor 4 ,f t ^ * £ llli£3/Mecliiim Power Amp. • fl-JfiTfjiESI/Dimensions Unit : mm 1) Ic m = 2.5A Pc = 0 7 5 W ( D * i U * o 2) VcE(sat) VCE(sat)=0.3V(Typ.)


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    PDF 2SD1384 2SB1010. 2SD1384 ST-103 2Sb1010 transistor

    2SD1863

    Abstract: 2sd1733 2SD1898
    Text: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F •F e a tu re s 1) High ►External dimensions (Units: mm) V ceo . V ceo = 8 0 V 2SD1898 2) High IC. Ic = 1A (DC) 4.5±g:? c+0.2 5 _ 0.1 3) Good hre linearity. 4) Low VcEfsat),


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    PDF 2SD1898 2SD1733 2SD1768S 2SD1863 2SD1381F 2SD1898 2SB12 /2SB1241 SC-62

    D1382

    Abstract: D 1382 2SD1382 0550L
    Text: h "7 > v 7 $ /Transistors 2SD1382 t \/~f \y>—"fYt NPN '>>;=!> h 7 > ' > Z $ Epitaxil Planar NPN Silicon Transistor l & i i^ ^ ^ j ii l if f l /L o w Freq. Power Amp. 2S D 1382 1) V CE o = 8 0 V t L ' „ 7. 8 ± 0 . 2 2.5 ± 0- 2 r 2) lc = 1 A t * ^ l ' u


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    PDF 2SD1382 O-126 D1382 D 1382 2SD1382 0550L

    2SD1383K

    Abstract: 2SD1402 2SD1407 2SD1416 2SD1390 2SD1376K 2SD1377K 2SD1378 2SD1379 2SD1380
    Text: - 246 - Ta=25cC, *Ep(äTc=25‘C TJ 2SD1376K 2SD1377K 2SD1378 2SD13792SD13S0 Cf — 2SD1381 2SD1382 2SD1383K 2SD1384 2SD1385 2SD139Q 2SD1391 2SD1392 2SD1394 2SD1395 2SD1396 2SD1397 2SD1398 2SD1399 □— A BÄ D— A n— A □— A O— A D — töT


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    PDF 2SD1376K 2SD1377K 2SD1378 2SD1379 2SD1380 2SD1381 2SD1382 2SD1383T0-3PB) 2SD1403 2-10L1A) 2SD1383K 2SD1402 2SD1407 2SD1416 2SD1390

    2sc4137

    Abstract: TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A 2SB1007
    Text: ROHM CO MOE LT» TñSñW ]> G0035ñb 2 IRHM 1 Irl 7=33- 0 } • TO-126, TO-126FP Types Type TO-126 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A 2SD1378 2SD1380 2SD1382 2SD1506 2SD1563 2SD1563A 2SB1423 2SD2147 2SC3272 — — 2SB1008 2SB1272 2SD1379 2SD1637 2SD1638


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    PDF 7fi20W O-126, O-126FP O-126 O-126FP JO-126FP 2SB1007 2SB1309 2SB1009 2sc4137 TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A

    D3S 59

    Abstract: No abstract text available
    Text: O a 2SD1383K / T ransistors b~7 U I O o O I V *-y > h > # * Epitaxial Planar NPN Silicon Transistor (Darlington) il/H ig h Gain Amp. • ¥ i% 1) • • Dimensions (Unit : mm) ? - ' ) > h > S » T lh F E 7 A 5 . h F E = 5 0 000 (Typ.) (at 100mA) i . i -S:?


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    PDF 2SD1383K 100mA) SC-59 10OOliiJz 2SD1383K 50001ii D3S 59

    2SD1380

    Abstract: TRANSISTOR BV 32
    Text: Is 7 > V £ /Transistors 2SD1380 7 ; I/ 7° b - * Jg NPN y V □ > b 7 > V 7. $ X kf * * y 2SD 1380 Epitaxial Planar NPN Silicon Transistor Freq. Power Amp. • ^ J fir H ilH /D im e n s io n s Unit : mm 1) VcEO= 32V, lc= 2A, Pc= 10W<D?A mt-iT’T&Zc 2) 2SB10091 =l > -f'J ? A 3 0


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    PDF 2SD1380 2SB10091 100MHz 2SD1380 TRANSISTOR BV 32