Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SD130 Search Results

    2SD130 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    2SD1306NETR-E Renesas Electronics Corporation Small Signal Bipolar Transistors, MPAK, / Visit Renesas Electronics Corporation
    2SD1306NETL-E Renesas Electronics Corporation Small Signal Bipolar Transistors, MPAK, / Visit Renesas Electronics Corporation
    2SD1306NDTL-E Renesas Electronics Corporation Small Signal Bipolar Transistors, MPAK, / Visit Renesas Electronics Corporation
    2SD1306NDTR-E Renesas Electronics Corporation Small Signal Bipolar Transistors, MPAK, / Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SD130 Price and Stock

    JRH Electronics MTMM-105-02-S-D-130

    PIN HEADER, BOARD-TO-BOARD, 2 MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTMM-105-02-S-D-130 Bulk 543
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    JRH Electronics TW-10-02-S-D-130-100

    STACKING BOARD CONNECTOR, TW SER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TW-10-02-S-D-130-100 Bulk 196 1
    • 1 $8.89
    • 10 $8.89
    • 100 $7.1092
    • 1000 $5.30914
    • 10000 $5.30914
    Buy Now

    JRH Electronics TW-13-02-S-D-130-080

    FLEXIBLE SURFACE MOUNT BOARD STA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TW-13-02-S-D-130-080 Bulk 117
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    JRH Electronics TW-15-02-S-D-130-125

    STACKING BOARD CONNECTOR, TW SER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TW-15-02-S-D-130-125 Bulk 117
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    JRH Electronics TW-13-02-S-D-130-125

    STACKING BOARD CONNECTOR, TW SER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TW-13-02-S-D-130-125 Bulk 117
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    2SD130 Datasheets (83)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD130 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD130 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD130 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD130 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD130 Unknown Transistor Replacements Scan PDF
    2SD130 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD130 Unknown Cross Reference Datasheet Scan PDF
    2SD130 Unknown Transistor Replacements Scan PDF
    2SD130 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD130 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD130 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD130 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD130 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD130 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD130 Toshiba Japanese Transistor Data Book Scan PDF
    2SD1300 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1300 Unknown Cross Reference Datasheet Scan PDF
    2SD1300 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1300 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1301 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SD130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1388

    Abstract: 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 45W 2SD1301 1500 5 2A 130 3-12 10 1A (Tc=25ºC) 2SD1302 25


    Original
    PDF 2SD1301 2SD1302 2SD1303 2SD1304 2SD1305 2SD1306 2SD1307 2SD1308 2SD1309 2SD1310 2SD1388 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371

    Hitachi DSA002756

    Abstract: No abstract text available
    Text: 2SD1306 Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline 2SD1306 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO


    Original
    PDF 2SD1306 Hitachi DSA002756

    2SD1302

    Abstract: 2sd1302 data sheet
    Text: Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm • Features ● Low collector to emitter saturation voltage VCE sat . Low ON resistance Ron. High foward current transfer ratio hFE.


    Original
    PDF 2SD1302 2SD1302 2sd1302 data sheet

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SD1306 R07DS0280EJ0400 Rev.4.00 Jan 10, 2014 Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline RENESAS Package code: PLSP0003ZB-A Package name: MPAK 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings


    Original
    PDF 2SD1306 R07DS0280EJ0400 PLSP0003ZB-A R07DS0280EJ0400

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SD1306 R07DS0280EJ0300 Previous: REJ03G0784-0200 Rev.3.00 Mar 28, 2011 Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector


    Original
    PDF 2SD1306 R07DS0280EJ0300 REJ03G0784-0200) PLSP0003ZB-A R07DS0280EJ0300

    2SD1308

    Abstract: 2SB974
    Text: SavantIC Semiconductor Product Specification 2SD1308 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2SB974 APPLICATIONS ·For audio frequency power amplifier and low speed switching industrial use


    Original
    PDF 2SD1308 O-220 2SB974 VCCA50V 2SD1308 2SB974

    2SB974

    Abstract: 2SD1308 transistor 2A k transistor 2A pnp 2SD130
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -2A ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1308


    Original
    PDF 2SD1308 -100V, 2SB974 2SD1308 transistor 2A k transistor 2A pnp 2SD130

    2SD1306

    Abstract: 2SD1306NDTL-E 2SD1306NETL-E SC-59A
    Text: 2SD1306 Silicon NPN Epitaxial REJ03G0784-0200 Previous ADE-208-1144 Rev.2.00 Aug.10.2005 Application Low frequency amplifier, Muting Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings


    Original
    PDF 2SD1306 REJ03G0784-0200 ADE-208-1144) PLSP0003ZB-A 2SD1306 2SD1306NDTL-E 2SD1306NETL-E SC-59A

    2SD1303

    Abstract: No abstract text available
    Text: ST 2SD1303 NPN Silicon Epitaxial Planar Transistor for audio muting application. On special request, these transistors can be manufactured in different pin configurations. Features ˙High emitter-base voltage VEBO=7.5V min * ˙High reverse hFE reverse hFE=20(min) (VCE=2V, IC=4mA)


    Original
    PDF 2SD1303 2SD1303

    2SD1303

    Abstract: epitaxial transistor high voltage hFE-20
    Text: ST 2SD1303 NPN Silicon Epitaxial Planar Transistor for audio muting application. On special request, these transistors can be manufactured in different pin configurations. Features ․High emitter-base voltage VEBO=7.5V min * ․High reverse hFE reverse hFE=20(min) (VCE=2V, IC=4mA)


    Original
    PDF 2SD1303 2SD1303 epitaxial transistor high voltage hFE-20

    2sd1304

    Abstract: No abstract text available
    Text: Transistor 2SD1304 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 1.45 0.95 1 3 +0.1 +0.2 0.65±0.15 0.95 2.9 –0.05 ● 0.65±0.15 Zener diode built in. Mini type package, allowing downsizing of the equipment and


    Original
    PDF 2SD1304 2sd1304

    2SD1302

    Abstract: No abstract text available
    Text: Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 ● Low collector to emitter saturation voltage VCE sat . Low ON resistance Ron. High foward current transfer ratio hFE.


    Original
    PDF 2SD1302 2SD1302

    2SD1302

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1302 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector-emitter saturation voltage VCE(sat)


    Original
    PDF 2002/95/EC) 2SD1302 2SD1302

    Hitachi DSA0076

    Abstract: 2SD1306 2SD1504
    Text: 2SD1306 Silicon NPN Epitaxial ADE-208-1144 Z 1st. Edition Mar. 2001 Application Low frequency amplifier, Muting Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SD1306 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage


    Original
    PDF 2SD1306 ADE-208-1144 Hitachi DSA0076 2SD1306 2SD1504

    2SD1302

    Abstract: No abstract text available
    Text: Transistors 2SD1302 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector-emitter saturation voltage VCE sat • Low ON resistance Ron • High forward current transfer ratio hFE


    Original
    PDF 2SD1302 2SD1302

    2SD1303

    Abstract: No abstract text available
    Text: ST 2SD1303 NPN Silicon Epitaxial Planar Transistor for audio muting application. On special request, these transistors can be manufactured in different pin configurations. Features ˙High emitter-base voltage VEBO=7.5V min * ˙High reverse hFE reverse hFE=20(min) (VCE=2V, IC=4mA)


    Original
    PDF 2SD1303 2SD1303

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SD1306 R07DS0280EJ0300 Previous: REJ03G0784-0200 Rev.3.00 Mar 28, 2011 Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector


    Original
    PDF 2SD1306 R07DS0280EJ0300 REJ03G0784-0200) PLSP0003ZB-A R07DS0280EJ0300

    TO-92B

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1302 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector-emitter saturation voltage VCE(sat)


    Original
    PDF 2002/95/EC) 2SD1302 TO-92B

    2SD1303

    Abstract: No abstract text available
    Text: ST 2SD1303 NPN Silicon Epitaxial Planar Transistor for audio muting application. On special request, these transistors can be manufactured in different pin configurations. Features ˙High emitter-base voltage VEBO=7.5V min * ˙High reverse hFE reverse hFE=20(min) (VCE=2V, IC=4mA)


    Original
    PDF 2SD1303 2SD1303

    2SD1301

    Abstract: No abstract text available
    Text: 2SD1301 2SD1301 '> ij 3 > NPN 'J'M * ~ ?— ~r U- I T " N PN Triple Diffused Mesa /H o rizo n tal Deflection Output for Small Color TV Set H $$ ^ [/F e a tu re s • 5T's ;<9’-i t — Kl^liKo/Built-in damper diode on chip • r iiilh . in ji X -i v -f- > 9 „ /H ig h voltage, high speed switching


    OCR Scan
    PDF 2SD1301 2SD1301

    2SD1309

    Abstract: d1309 BO150
    Text: 2SD 1309 2SD1309 N P N + V h^ x ^ NPN Silicon Epitaxial Darlington Transistor Audio Frequency Amplifier and Low Speed Switching Industrial Use Xi f f l K M m / P ACKAGE DIMENSIONS # * / FEATURES > > O t e » 7 " ' V — o C - E Paliseli. II K / N - . y 'r — ^ X


    OCR Scan
    PDF 2SD1309 2SD1309 d1309 BO150

    Untitled

    Abstract: No abstract text available
    Text: 2SD1306 Silicon NPN Epitaxial HITACHI Application Low frequency amplifier, Muting Outline MPAK 1. Emitter 2. Base 3. Collector 908 2SD1306 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage VcBO 30 V Collector to emitter voltage


    OCR Scan
    PDF 2SD1306 2SD1306 2SD1504.

    2SB1039

    Abstract: 2SD1309 MP40 2SD1347 2SD1304 2SD1305 2SD1306 2SD1308 2SD1310 2SD1311
    Text: - 244 - Ta=25tC, *EPííTc=25'C m % tt g 2SD1304 tëT LF A 2SD1305 HV LF A 2SD1306 1ST H i 2SD1308 H U LF PA/LS PSW 2SD1309 H S LF PA/LS PSW 2SD1310 LF A/Mut I VcBO VcEQ ice DC) Pe Pe* (V) (V) (A) (W) (W) I ÍCB0 (max) VcB (V) (UH) (min) Í1FE W íl (max)


    OCR Scan
    PDF 2SD1304 2SD1305 2SD1306 2SD1308 2SD1309 2SD1310 2SD1311 2SD1326 T0-220F 2SD1327 2SB1039 MP40 2SD1347

    transistor jp

    Abstract: 2SD1308 2SB974 2T54 h13k
    Text: 2S D 1308 2SD1308 7*JUM'> l NPNx. / |j y h ^ > ' > X ? NPN Silicon Epitaxial Darlington Transistor Audio Frequency Power Amplifier and „ Low Speed Switching Industrial Use i * >v n V nmm 2SD1308li, y-f > i L T llf iS ? ; h . 7 > ^ 'X ^ -C 'O A -F A 1 S t i,


    OCR Scan
    PDF 2SD1308 2SD1308Ã 2SB974 Tc-25 transistor jp 2SD1308 2SB974 2T54 h13k