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    2SD1220 Search Results

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    Samtec Inc TW-20-02-S-D-122-026

    Conn Board Stacker HDR 40 POS 2mm Solder ST Thru-Hole - Bulk (Alt: TW-20-02-S-D-122-0)
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    Avnet Americas TW-20-02-S-D-122-026 Bulk 1
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    Newark TW-20-02-S-D-122-026 Bulk 1
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    Master Electronics TW-20-02-S-D-122-026
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    Toshiba America Electronic Components 2SD1220-Y(T6L1,NQ)

    Bipolar Transistor (BJT)
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    Chip1Stop 2SD1220-Y(T6L1,NQ) 3,450
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    Toshiba America Electronic Components 2SD1220-O(T6L1,NQ)

    Bipolar Transistor (BJT)
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    Chip1Stop 2SD1220-O(T6L1,NQ) 1,850
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    2SD1220 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD1220 Kexin Silicon NPN Epitaxial Transistor Original PDF
    2SD1220 Toshiba NPN Transistor Original PDF
    2SD1220 TY Semiconductor Silicon NPN Epitaxial Transistor - TO-252 Original PDF
    2SD1220 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1220 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1220 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1220 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1220 Unknown Cross Reference Datasheet Scan PDF
    2SD1220 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1220 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1220 Toshiba Silicon NPN transistor for power amplifier applications Scan PDF

    2SD1220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1220 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15


    Original     		PDF 2SD1220 O-252 D1220

    D1220

    Abstract: 2sd1220 2SB905
    Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage


    Original     		PDF 2SD1220 2SB905 D1220 2sd1220 2SB905

    D1220

    Abstract: 2sd1220 2SB905
    Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage


    Original     		PDF 2SD1220 2SB905 D1220 2sd1220 2SB905

    Untitled

    Abstract: No abstract text available
    Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage


    Original     		PDF 2SD1220 2SB905

    D1220

    Abstract: 2SB905 2SD1220
    Text: 2SD1220 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SD1220 ○ 電力増幅用 • 単位: mm 2SB905 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧


    Original     		PDF 2SD1220 2SB905 D1220 2SB905 2SD1220

    2SD1220

    Abstract: D1220 2SB905
    Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage


    Original     		PDF 2SD1220 2SB905 2SD1220 D1220 2SB905

    2SB905

    Abstract: B905 2SD1220
    Text: 2SB905 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SB905 ○ 電力増幅用 • 単位: mm 2SD1220 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧


    Original     		PDF 2SB905 2SD1220 20070701-JA 2SB905 B905 2SD1220

    D1220

    Abstract: D122 2sd1220
    Text: Transistors SMD Type Silicon NPN Epitaxial Transistor 2SD1220 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1


    Original     		PDF 2SD1220 O-252 D1220 D1220 D122 2sd1220

    D1220

    Abstract: 2sd1220 2SB905
    Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage


    Original     		PDF 2SD1220 2SB905 D1220 2sd1220 2SB905

    D1220

    Abstract: 2SD1220 2SB905
    Text: 2SD1220 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SD1220 ○ 電力増幅用 • 単位: mm 2SB905 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧


    Original     		PDF 2SD1220 2SB905 20070701-JA D1220 2SD1220 2SB905

    2sd1220

    Abstract: 2SB905
    Text: 2SD1220 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 Complementary to 2SB905 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO


    OCR Scan     		PDF 2SD1220 2SB905 2sd1220

    2SB905

    Abstract: 2SD1220
    Text: TO SH IBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage


    OCR Scan     		PDF 2SB905 2SD1220 2SB905 2SD1220

    2SD1220

    Abstract: No abstract text available
    Text: 2SD1220- SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. Unit in mm . 6 8 MAX, FEATURES: CL6 MAX . . Complementary to 2SB905 Û8MAX. MAXIMUM RATINGS (Ta=25üC) SYMBOL CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 2SD1220- 2SB905 200mA 2SD1220 2SD1220

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD1220 2 S D 1 220 T O SH IB A TRA N SISTO R PO W ER AM PLIFIER APPLICATIO NS • SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage


    OCR Scan     		PDF 2SD1220 2SB905

    2SB905

    Abstract: 2SD1220
    Text: TOSHIBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage


    OCR Scan     		PDF 2SB905 2SD1220 2SB905

    2sd1220

    Abstract: 2SB905
    Text: 2SD1220 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 PO W ER AM PLIFIER APPLICATIONS • Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage


    OCR Scan     		PDF 2SD1220 2SB905 2sd1220

    2SB905

    Abstract: 2SD1220
    Text: TO SH IBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage


    OCR Scan     		PDF 2SB905 2SD1220 2SB905

    2sd1220

    Abstract: 2SB905
    Text: 2SD1220 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 Complementary to 2SB905 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO


    OCR Scan     		PDF 2SD1220 2SB905 2sd1220

    U2550

    Abstract: 2sd122
    Text: TOSHIBA 2SD1220 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 SD12 2 0 POWER AMPLIFIER APPLICATIONS. U nit in mm ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current !CBO E m itter Cut-off Current ÏEBO Collector-Emitter Breakdown


    OCR Scan     		PDF 2SD1220 200mA 500mA, U2550 2sd122

    2SB905

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SB905 POWER AMPLIFIER APPLICATION. Unit in mm FEATURES : Cl6 MAX. . Complementary to 2SD1220 MAXIMUM RATINGS Ta=25 C CHARACTERISTIC SYMBOL Collector-Base Voltage RATING UNIT vCBO -150 V Collector-Emitter Voltage VcEO -150 V Emitter-Base Voltage


    OCR Scan     		PDF 2SB905 2SD1220 -10mA, -200mA -500mA, -50mA 2SB905

    Untitled

    Abstract: No abstract text available
    Text: 2SD1220 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm 6.8MAX. FEATURES : . Complementary to 2SB905 n asíais MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 150 Collector-Emitter Voltage VCEO 150


    OCR Scan     		PDF 2SD1220 2SB905 200mA

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB905 Unit in mm PO W ER AM PLIFIER APPLICATIONS. • Complementary to 2SD1220 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage


    OCR Scan     		PDF -2SB905 2SD1220 2SB905

    Untitled

    Abstract: No abstract text available
    Text: 2SD1220 TOSHIBA 2 S D 1 220 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage


    OCR Scan     		PDF 2SD1220 2SB905

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage


    OCR Scan     		PDF 2SB905 2SD1220