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    Panasonic Electronic Components 2SC59540Q

    TRANS NPN 60V 3A TO-220D-A1
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    2SC595 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC595 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC595 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC595 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC595 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC595 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC595 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC595 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC595 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC595 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC595 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC595 Unknown Cross Reference Datasheet Scan PDF
    2SC5950 Panasonic Transistor for general amplification. Complementary to 2SA2122 Original PDF
    2SC5951 Sanyo Semiconductor General-Purpose Transistors Original PDF
    2SC5954 Panasonic Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Original PDF
    2SC59540Q Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 60VCEO 3A TO-220D Original PDF
    2SC5954P Panasonic Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Original PDF
    2SC5954Q Panasonic Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Original PDF
    2SC5957 Sanyo Semiconductor High-Voltage High-Speed Switching Transistors Original PDF
    2SC5957M Sanyo Semiconductor NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Original PDF
    2SC595N Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SC595 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SA2122

    Abstract: 2SC5950
    Text: Transistors 2SA2122 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950 Unit: mm • Features 0.15+0.10 –0.05 0.425 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10 2 0.2±0.1 1 (0.65) (0.65)  Absolute Maximum Ratings Ta = 25°C


    Original     		2SA2122 2SC5950 2SA2122 2SC5950 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G • Features  Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic


    Original     		2002/95/EC) 2SC5950G 2SA2122G PDF

    IC 7667

    Abstract: 2SC5951
    Text: Ordering number : ENN7667 2SC5951 NPN Triple Diffused Planar Silicon Transistor 2SC5951 Switching Regulator Applications Features • • High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process. unit : mm 2042B [2SC5951] 8.0 4.0 1.0


    Original     		ENN7667 2SC5951 2042B 2SC5951] O-126ML IC 7667 2SC5951 PDF

    2SC5950

    Abstract: 2SC5950G 2SA2122G 2SC5632 2SA21
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G • Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic


    Original     		2002/95/EC) 2SC5950G 2SA2122G 2SC5950 2SC5950G 2SA2122G 2SC5632 2SA21 PDF

    2SA2122G

    Abstract: 2SC5950G 2SA2122
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950G • Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic


    Original     		2002/95/EC) 2SA2122G 2SC5950G 2SA2122G 2SC5950G 2SA2122 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 3 5° 2.1±0.1 1.25±0.10


    Original     		2002/95/EC) 2SC5950 2SA2122 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10


    Original     		2002/95/EC) 2SA2122 2SC5950 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 3 5° 2.1±0.1 1.25±0.10


    Original     		2002/95/EC) 2SA2122 2SC5950 PDF

    2SA2122G

    Abstract: 2SC5950G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950G • Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic


    Original     		2002/95/EC) 2SA2122G 2SC5950G 2SA2122G 2SC5950G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G • Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic


    Original     		2002/95/EC) 2SC5950G 2SA2122G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950G • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C


    Original     		2002/95/EC) 2SA2122G 2SC5950G PDF

    2SA21

    Abstract: 2SA2122 2SC5950
    Text: Transistors 2SC5950 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122 Unit: mm • Features 0.15+0.10 –0.05 0.425 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10 2 0.2±0.1 1 (0.65) (0.65)  Absolute Maximum Ratings Ta = 25°C


    Original     		2SC5950 2SA2122 2SA21 2SA2122 2SC5950 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950G • Features  Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic


    Original     		2002/95/EC) 2SA2122G 2SC5950G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10


    Original     		2002/95/EC) 2SC5950 2SA2122 PDF

    2SC5957

    Abstract: 76131
    Text: Ordering number : ENN7613 2SC5957 NPN Triple Diffused Planar Silicon Transistor 2SC5957 Switching Regulator Applications Features • • • • Package Dimensions High breakdown voltage and high reliability. High-speed switching. Wide ASO. Adoption of MBIT process.


    Original     		ENN7613 2SC5957 2010C 2SC5957] O-220 2SC5957 76131 PDF

    2SA2122

    Abstract: 2SC5950 2SA21
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 Collector-base voltage (Emitter open)


    Original     		2002/95/EC) 2SA2122 2SC5950 2SA2122 2SC5950 2SA21 PDF

    2SA2122

    Abstract: 2SC5950
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 Collector-base voltage (Emitter open)


    Original     		2002/95/EC) 2SC5950 2SA2122 2SA2122 2SC5950 PDF

    2SC5954

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5954 Silicon NPN triple diffusion planar type Unit: mm For power amplification with high forward current transfer ratio 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/


    Original     		2002/95/EC) 2SC5954 O-220D-A1 2SC5954 PDF

    2SC5957M

    Abstract: iT063
    Text: 2SC5957M Ordering number : ENA0152 2SC5957M NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage and high reliability. High-speed switching. Wide ASO. Adoption of MBIT process. Specifications


    Original     		2SC5957M ENA0152 PW300 cycle10% A0152-4/4 2SC5957M iT063 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10


    Original     		2002/95/EC) 2SA2122 2SC5950 PDF

    2SA2122

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10


    Original     		2002/95/EC) 2SC5950 2SA2122 2SA2122 PDF

    2SC5954

    Abstract: No abstract text available
    Text: Power Transistors 2SC5954 Silicon NPN triple diffusion planar type Unit: mm For power amplification with high forward current transfer ratio 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open


    Original     		2SC5954 2SC5954 PDF

    2SC5950

    Abstract: 2SA2122G 2SC5632 2SC5950G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G • Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic


    Original     		2002/95/EC) 2SC5950G 2SA2122G 2SC5950 2SA2122G 2SC5632 2SC5950G PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent PDF