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    2SC581 Search Results

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    2SC581 Price and Stock

    Panasonic Electronic Components 2SC581300L

    TRANS NPN 80V 1.5A MINI3
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    2SC581300L Digi-Reel 1
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    Toshiba America Electronic Components 2SC5819(TE12L,ZF)

    TRANS NPN 20V 1.5A PW-MINI
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    Toshiba America Electronic Components 2SC5810(TE12L,F)

    Trans GP BJT NPN 50V 1A 2000mW 4-Pin(3+Tab) PW-Mini T/R
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    Verical 2SC5810(TE12L,F) 6,307 404
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    Quest Components 2SC5810(TE12L,F) 5,045
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    Chip1Stop 2SC5810(TE12L,F) 3,200
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    EBV Elektronik 2SC5810(TE12L,F) 29 Weeks 2,000
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    Toshiba America Electronic Components 2SC5810(TE12L,ZF)

    Transistor Silicon NPN Epitaxial Type
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    Verical 2SC5810(TE12L,ZF) 2,890 527
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    2SC5810(TE12L,ZF) 630 153
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    Quest Components 2SC5810(TE12L,ZF) 2,312
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    Chip1Stop 2SC5810(TE12L,ZF) Cut Tape 630
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    Toshiba America Electronic Components 2SC5810(T2LNITOK,F

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    Quest Components 2SC5810(T2LNITOK,F 2,170
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    Find more 2SC581 price and stock on Findchips.com

    2SC581 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC581 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC581 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC581 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC581 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC581 Unknown Cross Reference Datasheet Scan PDF
    2SC581 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC581 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC581 Unknown Vintage Transistor Datasheets Scan PDF
    2SC581 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC581 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC581 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC5810 Toshiba NPN Transistor Original PDF
    2SC5810 Toshiba Transistor Original PDF
    2SC5810(TE12L,F) Toshiba 2SC5810 - TRANSISTOR NPN 50V 1A SC-62 Original PDF
    2SC5811 Sanyo Semiconductor NPN transistor for ultrahigh definition CRT display horizontal deflection output applications Original PDF
    2SC5812 Hitachi Semiconductor Silicon NPN Transistor Original PDF
    2SC5812 Renesas Technology Silicon NPN Epitaxial VHF/UHF wide band amplifier Original PDF
    2SC5812 Renesas Technology Silicon NPN Epitaxial VHF/UHF wide band amplifier Original PDF
    2SC5812 Renesas Technology Silicon NPN Epitaxial Transistor VHF/UHF Wide Band Amplifier Original PDF
    2SC5812WG-TR-E Renesas Technology Silicon NPN Epitaxial VHF/UHF wide band amplifier Original PDF

    2SC581 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5819

    Abstract: No abstract text available
    Text: 2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original     		PDF 2SC5819 2SC5819

    2SC5810

    Abstract: No abstract text available
    Text: 2SC5810 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5810 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.17 V (最大)


    Original     		PDF 2SC5810 SC-62 2SC5810

    Untitled

    Abstract: No abstract text available
    Text: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)


    Original     		PDF 2SC5810 SC-62

    Untitled

    Abstract: No abstract text available
    Text: 2SC5819 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original     		PDF 2SC5819

    2SC5810

    Abstract: No abstract text available
    Text: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)


    Original     		PDF 2SC5810 2SC5810

    2SC5810

    Abstract: No abstract text available
    Text: 2SC5810 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5810 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.17 V (最大)


    Original     		PDF 2SC5810 SC-62 20070701-JA 2SC5810

    Untitled

    Abstract: No abstract text available
    Text: 2SC5812 Silicon NPN Epitaxial VHF/UHF wide band amplifier REJ03G0757-0100 Previous ADE-208-1468 Rev.1.00 Aug.10.2005 Application • High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)


    Original     		PDF 2SC5812 REJ03G0757-0100 ADE-208-1468) PUSF0003ZA-A

    Untitled

    Abstract: No abstract text available
    Text: 2SC5810 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5810 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.17 V (最大)


    Original     		PDF 2SC5810

    2SC5812

    Abstract: DSA003640 ADE-208-1468
    Text: 2SC5812 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1468 Z Rev.0 Nov. 2001 Features • High power gain, Low noise figure at low power operation: 2 |S21| = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline MFPAK 3 1 2 Note: Marking is “WG–“.


    Original     		PDF 2SC5812 ADE-208-1468 D-85622 D-85619 2SC5812 DSA003640

    2SC5819

    Abstract: No abstract text available
    Text: 2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original     		PDF 2SC5819 2SC5819

    2SC5810

    Abstract: No abstract text available
    Text: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)


    Original     		PDF 2SC5810 2SC5810

    2SC5819

    Abstract: No abstract text available
    Text: 2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A · Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original     		PDF 2SC5819 2SC5819

    2SC5810

    Abstract: No abstract text available
    Text: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)


    Original     		PDF 2SC5810 2SC5810

    5H MARKING

    Abstract: 2SC5813
    Text: Transistors 2SC5813 Silicon NPN epitaxial planar type Unit: mm For DC-DC converter 0.40+0.10 –0.05 0.95 (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.65) • Low collector to emitter saturation voltage VCE(sat)


    Original     		PDF 2SC5813 5H MARKING 2SC5813

    Untitled

    Abstract: No abstract text available
    Text: 2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original     		PDF 2SC5819

    2SC5813

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5813 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 3 (0.95) (0.95) 1.9±0.1 Collector current


    Original     		PDF 2002/95/EC) 2SC5813 SC-59 2SC5813

    ADE 352

    Abstract: 2SC5812 2SC5812WG-TR-E PUSF0003ZA-A SC-89
    Text: 2SC5812 Silicon NPN Epitaxial VHF/UHF wide band amplifier REJ03G0757-0100 Previous ADE-208-1468 Rev.1.00 Aug.10.2005 Application • High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)


    Original     		PDF 2SC5812 REJ03G0757-0100 ADE-208-1468) PUSF0003ZA-A ADE 352 2SC5812 2SC5812WG-TR-E PUSF0003ZA-A SC-89

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC5810 Package Name: PW-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s


    Original     		PDF 2SC5810

    2SC5817

    Abstract: 2SC5814 2SC5815 2SC5816 MARKING EE
    Text: 〈Transistor〉 DEVELOPING 2SC5814，2SC5815，2SC5816，2SC5817 For Low Frequency Amplify Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：ｍｍ 2SC5814 2SC5814，2SC5815，2SC5816，2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency


    Original     		PDF 2SC58142SC58152SC58162SC5817 2SC5814 2SC58142SC58152SC58162SC5817 2SC5815 2SC5817 2SC5814 2SC5815 2SC5816 MARKING EE

    2SC5813

    Abstract: No abstract text available
    Text: Transistors 2SC5813 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Low collector-emitter saturation voltage VCE sat • Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SC5813 2SC5813

    Untitled

    Abstract: No abstract text available
    Text: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)


    Original     		PDF 2SC5810

    2SC5819

    Abstract: No abstract text available
    Text: 2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original     		PDF 2SC5819 2SC5819

    2SC5810

    Abstract: No abstract text available
    Text: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.1 A · Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)


    Original     		PDF 2SC5810 2SC5810

    2SC5810

    Abstract: No abstract text available
    Text: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)


    Original     		PDF 2SC5810 2SC5810