2SC5781 TRANSISTOR Search Results

2SC5781 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

2SC5781 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
sanyo ic 7550 Abstract: 5645 marking 276-143 2SC5781 D2502 9109 DC ic 14069 12697 6221 ic 12904 Text: Ordering number : ENN7321 2SC5781 NPN Epitaxial Planar Silicon Transistor 2SC5781 High-Frequency Low-Noise Amplifier and OSC Applications • • • • Package Dimensions Low-noise use : NF=1.5dB typ f=2GHz . High cutoff frequency : fT=6.5GHz typ (VCE=1V).	Original	ENN7321 2SC5781 2SC5781] sanyo ic 7550 5645 marking 276-143 2SC5781 D2502 9109 DC ic 14069 12697 6221 ic 12904	PDF
sanyo ic 7550 Abstract: IC 7458 Transistor C 4927 2SC5781 D2502 16451 ic 7522 ps Text: Ordering number : ENN7321 2SC5781 NPN Epitaxial Planar Silicon Transistor 2SC5781 High-Frequency Low-Noise Amplifier and OSC Applications • • • • Package Dimensions Low-noise use : NF=1.5dB typ f=2GHz . High cutoff frequency : fT=6.5GHz typ (VCE=1V).	Original	ENN7321 2SC5781 2SC5781] sanyo ic 7550 IC 7458 Transistor C 4927 2SC5781 D2502 16451 ic 7522 ps	PDF
2sc5781 transistor Abstract: No abstract text available Text: Ordering number : 0000000 2SC5781 NPN Epitaxial Planar Silicon Transistor 2SC5781 High-Frequency Amp Applications, Osc. Applications Preliminary Features • • • Package Dimensions Low noise : NF=1.5dB typ f=2GHz . unit : mm High cut-off frequency : fT=6.5GHz typ (VCE=1V). 0000	Original	2SC5781 2SC5781] 2sc5781 transistor	PDF
smd transistor marking 12W Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103 Text: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・\|S21e\|2=17dB＠2GHz 0.3	Original	MCH4009 17dB2GHz SC-72 SC-43 SC-51 O-226 SC-71 O-126 O-92MOD smd transistor marking 12W SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103	PDF