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    2SC5781 TRANSISTOR Search Results

    2SC5781 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC5781 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sanyo ic 7550

    Abstract: 5645 marking 276-143 2SC5781 D2502 9109 DC ic 14069 12697 6221 ic 12904
    Text: Ordering number : ENN7321 2SC5781 NPN Epitaxial Planar Silicon Transistor 2SC5781 High-Frequency Low-Noise Amplifier and OSC Applications • • • • Package Dimensions Low-noise use : NF=1.5dB typ f=2GHz . High cutoff frequency : fT=6.5GHz typ (VCE=1V).


    Original     		PDF ENN7321 2SC5781 2SC5781] sanyo ic 7550 5645 marking 276-143 2SC5781 D2502 9109 DC ic 14069 12697 6221 ic 12904

    sanyo ic 7550

    Abstract: IC 7458 Transistor C 4927 2SC5781 D2502 16451 ic 7522 ps
    Text: Ordering number : ENN7321 2SC5781 NPN Epitaxial Planar Silicon Transistor 2SC5781 High-Frequency Low-Noise Amplifier and OSC Applications • • • • Package Dimensions Low-noise use : NF=1.5dB typ f=2GHz . High cutoff frequency : fT=6.5GHz typ (VCE=1V).


    Original     		PDF ENN7321 2SC5781 2SC5781] sanyo ic 7550 IC 7458 Transistor C 4927 2SC5781 D2502 16451 ic 7522 ps

    2sc5781 transistor

    Abstract: No abstract text available
    Text: Ordering number : 0000000 2SC5781 NPN Epitaxial Planar Silicon Transistor 2SC5781 High-Frequency Amp Applications, Osc. Applications Preliminary Features • • • Package Dimensions Low noise : NF=1.5dB typ f=2GHz . unit : mm High cut-off frequency : fT=6.5GHz typ (VCE=1V). 0000


    Original     		PDF 2SC5781 2SC5781] 2sc5781 transistor

    smd transistor marking 12W

    Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
    Text: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3


    Original     		PDF MCH4009 17dB2GHz SC-72 SC-43 SC-51 O-226 SC-71 O-126 O-92MOD smd transistor marking 12W SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103