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    2SC559 Search Results

    2SC559 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SC5594XP-TL-E Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, CMPAK, /Embossed Tape Visit Renesas Electronics Corporation
    2SC5594XP-TL-H Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, CMPAK, /Embossed Tape Visit Renesas Electronics Corporation
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    2SC559 Price and Stock

    Rochester Electronics LLC 2SC5594XP-TL-H

    SMALL SIGNAL BIPOLAR TRANSTR NPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC5594XP-TL-H Bulk 33,000 478
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    Rochester Electronics LLC 2SC5594XP-TL-E

    SMALL SIGNAL BIPOLAR TRANSTR NPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC5594XP-TL-E Bulk 6,000 478
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    Panasonic Electronic Components 2SC559200L

    TRANS NPN 15V 2.5A MINI3
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    DigiKey 2SC559200L Reel
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    Renesas Electronics Corporation 2SC5594XP-TL-E

    2SC5594 - RF Small Signal Bipolar Transistor, 0.035A, NPN '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SC5594XP-TL-E 6,000 1
    • 1 $0.6347
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    • 100 $0.5966
    • 1000 $0.5395
    • 10000 $0.5395
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    Renesas Electronics Corporation 2SC5594XP-TL-H

    2SC5594 - RF Small Signal Bipolar Transistor, 0.035A, NPN '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SC5594XP-TL-H 33,000 1
    • 1 $0.6347
    • 10 $0.6347
    • 100 $0.5966
    • 1000 $0.5395
    • 10000 $0.5395
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    2SC559 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC559 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC559 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC559 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC559 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC559 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC559 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC559 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC559 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC559 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC559 Unknown Cross Reference Datasheet Scan PDF
    2SC5590 Toshiba Silicon NPN Transistor Original PDF
    2SC5590 Toshiba NPN Transistor Original PDF
    2SC5590 Toshiba Silicon NPN triple diffused MESA type transistor for display, color TV, high speed switching applications, horizontal deflection output for high super resolution Scan PDF
    2SC5591 Panasonic NPN Transistor Original PDF
    2SC5591 Panasonic Silicon NPN triple diffusion mesa type Original PDF
    2SC5591 Panasonic Silicon NPN Triple Diffusion Mesa Type Power Transistor Original PDF
    2SC5592 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SC5592 Panasonic NPN Transistor Original PDF
    2SC5592 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SC559200L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN HF 15VCEO 2.5A MINI 3P Original PDF

    2SC559 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C5597

    Abstract: 2SC5597
    Text: Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES 1 700 V


    Original     		PDF 2SC5597 C5597 2SC5597

    2SC5597

    Abstract: No abstract text available
    Text: Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm M Di ain sc te on na tin nc ue e/ d 10.0 (6.0) (2.0) (4.0) 20.0±0.5 • Features Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)


    Original     		PDF 2SC5597 2SC5597

    C5597

    Abstract: 2SC5597 ic1035
    Text: Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO 1 700 V VCES 1 700 V VCEO 600 V Collector to base voltage Collector to emitter voltage


    Original     		PDF 2SC5597 C5597 2SC5597 ic1035

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5592 Silicon NPN epitaxial planar type For DC-DC converter For various driver circuits Unit: mm 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 0.4±0.2 2.90+0.20 –0.05 • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SC5592

    2SC5593

    Abstract: Hitachi DSA0014
    Text: 2SC5593 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-797 Z 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 23 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz Outline


    Original     		PDF 2SC5593 ADE-208-797 2SC5593 Hitachi DSA0014

    2SC5592

    Abstract: No abstract text available
    Text: Transistors 2SC5592 Silicon NPN epitaxial planar type For DC-DC converter For various driver circuits Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 0.95 (0.95) 1.9±0.1 (0.65) • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2SC5592 2SC5592

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SC5594 R07DS0278EJ0300 Previous: REJ03G0749-0200 Rev.3.00 Mar 28, 2011 Silicon NPN Epitaxial High Frequency Low Noise Amplifier Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz


    Original     		PDF 2SC5594 R07DS0278EJ0300 REJ03G0749-0200) PTSP0004ZA-A R07DS0278EJ0300

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5591 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 18.6±0.5 2.0 Solder Dip • Absolute Maximum Ratings TC = 25°C 1 700 V Collector-emitter voltage (E-B short) VCES 1 700 V Collector-emitter voltage (Base open)


    Original     		PDF 2SC5591

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Symbol Rating Unit Collector-base voltage Emitter open VCBO 1 700 Collector-emitter voltage (E-B short) VCES 1 700 V Collector-emitter voltage (Base open)


    Original     		PDF 2SC5597

    C5591

    Abstract: 2SC5591 C5591 Transistor Horizontal
    Text: Power Transistors 2SC5591 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output • Absolute Maximum Ratings TC = 25°C 23.4 (1.2) (2.0) (4.0) 2.0±0.2 5˚ 5˚ 1.1±0.1 0.7±0.1 Collector to base voltage VCBO 1 700 V Collector to emitter voltage


    Original     		PDF 2SC5591 C5591 2SC5591 C5591 Transistor Horizontal

    2SA2010

    Abstract: 2SC5592 2SA20
    Text: Transistors 2SC5592 Silicon NPN epitaxial planer type Unit: mm For DC-DC converter For various driver circuits 0.40+0.10 –0.05 1.9±0.1 1.1+0.3 –0.1 1.1+0.2 –0.1 10° 0 to 0.1 Symbol Rating Unit Collector to base voltage VCBO 15 V Collector to emitter voltage


    Original     		PDF 2SC5592 2SA2010 15nductor 2SA2010 2SC5592 2SA20

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5592 Silicon NPN epitaxial planar type For DC-DC converter For various driver circuits Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit Collector-base voltage (Emitter open) VCBO


    Original     		PDF 2002/95/EC) 2SC5592

    2SC5597

    Abstract: "Rectifier Tube"
    Text: Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 1 700 V Collector-emitter voltage (E-B short)


    Original     		PDF 2SC5597 2SC5597 "Rectifier Tube"

    2SA20

    Abstract: 2SA2010 2SC5592
    Text: Transistors 2SC5592 Silicon NPN epitaxial planer type Unit: mm For DC-DC converter For various driver circuits 0.40+0.10 –0.05 1.9±0.1 Symbol Rating Unit VCBO 15 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5 V Peak collector current


    Original     		PDF 2SC5592 SC-59 2SA20 2SA2010 2SC5592

    2SC5590

    Abstract: No abstract text available
    Text: 2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI−MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS l High Voltage Unit: mm : VCBO = 1700 V l Low Saturation Voltage


    Original     		PDF 2SC5590 2SC5590

    2SC5592

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5592 Silicon NPN epitaxial planar type For DC-DC converter For various driver circuits Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95)


    Original     		PDF 2002/95/EC) 2SC5592 2SC5592

    2SC5594

    Abstract: DSA003643
    Text: 2SC5594 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-798 Z 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz Outline


    Original     		PDF 2SC5594 ADE-208-798 2SC5594 DSA003643

    2SC5592

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5592 Silicon NPN epitaxial planar type For DC-DC converter For various driver circuits Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95)


    Original     		PDF 2002/95/EC) 2SC5592 2SC5592

    2SC5591

    Abstract: No abstract text available
    Text: Power Transistors 2SC5591 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 M Di ain sc te on na tin nc ue e/ d φ 3.2±0.1 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Base current Collector current


    Original     		PDF 2SC5591 SC-94 2SC5591

    2SC5594

    Abstract: 0443 IC 2SC5594XP-TL-E
    Text: 2SC5594 Silicon NPN Epitaxial High Frequency Low Noise Amplifier REJ03G0749-0200 Previous ADE-208-798 Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz


    Original     		PDF 2SC5594 REJ03G0749-0200 ADE-208-798) PTSP0004ZA-A 2SC5594 0443 IC 2SC5594XP-TL-E

    2SC5599

    Abstract: 2SC5599-T1 marking TV transistor 2SC5599
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5599 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin ultra super minimold package t = 0.75 mm


    Original     		PDF 2SC5599 2SC5599-T1 2SC5599 2SC5599-T1 marking TV transistor 2SC5599

    2SC5590

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS • • • High Voltage Low Saturation Voltage


    OCR Scan     		PDF 2SC5590 2SC5590

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, CO LO R TV FOR M ULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS • • • High Voltage Low Saturation Voltage


    OCR Scan     		PDF 2SC5590

    2sc 1203

    Abstract: ceg 052
    Text: 2SC5593 S ilic o n N P N E p itax ial U H F / V H F w id e b a n d am p lifier HITACHI Features • H igh Rain bandw idth produri f- = 23 G H z ty p . • H igh p o w e r gain iuid low noise figure , P G = l 8 d B l y p , N V » I 8 d B t y p . at f = 1 . 8 G H z


    OCR Scan     		PDF 2SC5593 2sc 1203 ceg 052