C5466
Abstract: 2SC5466 IC-303
Text: 2SC5466 東芝トランジスタ シリコンNPN三重拡散プレーナ型 2SC5466 ○ ダイナミックフォーカス用 ○ 高電圧スイッチング用 ○ 高電圧増幅用 • 単位: mm 高耐圧です。: VCEO = 800 V 絶対最大定格 Ta = 25°C
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2SC5466
SC-67
2-10R1A
20070701-JA
C5466
2SC5466
IC-303
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2SC5462
Abstract: Hitachi DSA001650
Text: 2SC5462 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output ADE-208-671 Z 1st. Edition Oct. 1, 1998 Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec(typ.) at fH=64kHz • Isolated package TO–3PFM
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2SC5462
ADE-208-671
64kHz
2SC5462
Hitachi DSA001650
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2SC5466
Abstract: C5466
Text: 2SC5466 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5466 Dynamic Focus Applications High Voltage Switching Applications Unit: mm High Voltage Amplifier Applications • High voltage: VCEO = 800 V Maximum Ratings Tc = 25°C Characteristics Symbol
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2SC5466
SC-67
2-10R1A
2SC5466
C5466
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2SC5465
Abstract: No abstract text available
Text: 2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Applications Unit: mm High Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 µs max • High collector breakdown voltage: VCEO = 800 V
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2SC5465
2SC5465
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Untitled
Abstract: No abstract text available
Text: 2SC5464 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol
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2SC5464
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2SC5461
Abstract: Hitachi DSA00493
Text: 2SC5461 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output 3rd. Edition December 1997 Target Specification Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec typ. at fH = 64kHz • Isolated package
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2SC5461
64kHz
2SC5461
Hitachi DSA00493
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2SC5464
Abstract: No abstract text available
Text: 2SC5464 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5464 ○ VHF~UHF 低雑音増幅用 • 単位: mm 雑音特性が優れています。: NF = 1.1dB, |S21e |2 = 12dB f = 1 GHz 絶対最大定格 (Ta = 25°C) 項 目
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2SC5464
2SC5464
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2SC5463
Abstract: No abstract text available
Text: 2SC5463 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5463 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol
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2SC5463
2SC5463
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CBC 337
Abstract: 83 801 2SC5464FT
Text: 2SC5464FT SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC5464FT CB 2 LWB 2 LWE 4 Cpe 4 Cpb 5 LC 6 CC 1 CBC 1 Q1 6 5 4 + AREA= 1 .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM + RE + RC + XTB + EG
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2SC5464FT
2SC5464FT
CBC 337
83 801
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2SC5465
Abstract: No abstract text available
Text: 2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications • Unit: mm Excellent switching times: tr = 0.7 µs max tf = 0.5 µs (max) (IC = 0.08 A)
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2SC5465
2SC5465
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Hitachi DSA002747
Abstract: 2SC5461
Text: 2SC5461 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output 3rd. Edition December 1997 Target Specification Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec typ. at fH = 64kHz • Isolated package
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2SC5461
64kHz
Hitachi DSA002747
2SC5461
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Untitled
Abstract: No abstract text available
Text: 2SC5465 東芝トランジスタ シリコンNPN三重拡散形 2SC5465 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 単位: mm • スイッチング時間が速い。 : tr = 0.7 s 最大
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2SC5465
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Untitled
Abstract: No abstract text available
Text: 2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Applications Unit: mm High Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 µs max • High collector breakdown voltage: VCEO = 800 V
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2SC5465
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Untitled
Abstract: No abstract text available
Text: 2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications Unit: mm High-Voltage Amplifier Applications • High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings Tc = 25°C Characteristics
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2SC5460
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5466 TO SHIBA TRANSISTOR DYNAM IC FOCUS APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5466 Unit in mm HIGH VO LTAGE SWITCHING APPLICATIONS HIGH VO LTAGE AMPLIFIER APPLICATIONS • High Voltage : V ç e O = 800 V MAXIMUM RATINGS Ta = 25°C SYMBOL
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2SC5466
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC5460 TENTATIVE TO SH IBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE L f if i Unit in mm D Y N A M IC FOCUS APPLICATIONS 8.3MAX. HIGH VOLTAGE SW ITCHING APPLICATIONS w r ;n v n i T A n F H ig h a m p iif if r appi 0 3.1 ± 0.1 i r a t id n ç 3:
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2SC5460
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5464FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.2 ± 0.05 0.8 ± 0.05 Low Noise Figure, High Gain. N F = l.ldB , |S 2 iel 2 = 12dB f=lGHz MAXIMUM RATINGS (Ta = 25°C)
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2SC5464FT
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2SC5460
Abstract: No abstract text available
Text: TO SH IBA 2SC5460 TOSHIBA TRANSISTOR DYNAMIC FOCUS APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5460 HIGH VOLTAGE SWITCHING APPLICATIONS HIGH VOLTAGE AMPLIFIER APPLICATIONS • H igh Voltage : V q e O = 800 V MAXIMUM RATINGS Tc = 25°C SYMBOL CHARACTERISTIC
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2SC5460
2SC5460
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2sc5468
Abstract: No abstract text available
Text: TO SH IBA TENTATIVE 2SC5468 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5468 VIDEO OUTPUT STAGE IN HIGH RESOLUTION DISPLAY • High Transition Frequency • Low Collector Output Capacitance • High Voltage frp = 400 MHz (Typ.) (VCE = 10 V, Ie = 50 mA)
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2SC5468
2sc5468
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2SC5460
Abstract: No abstract text available
Text: TO SH IBA 2SC5460 TOSHIBA TRANSISTOR DYNAMIC FOCUS APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5460 HIGH VOLTAGE SWITCHING APPLICATIONS HIGH VOLTAGE AMPLIFIER APPLICATIONS • High Voltage : Vqe O = 800 V MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC
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2SC5460
2SC5460
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TOSHIBA MICROWAVE AMPLIFIER
Abstract: 2SC5464FT
Text: TOSHIBA 2SC5464FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464FT Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.2 ±0.05 0.8 ± 0.05 Low Noise Figure, High Gain. N F = l.ldB , |S2 ie l2 = 12dB f=lGHz MAXIMUM RATINGS (Ta = 25°C)
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2SC5464FT
TOSHIBA MICROWAVE AMPLIFIER
2SC5464FT
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2SC5465
Abstract: No abstract text available
Text: TOSHIBA 2SC5465 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5465 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS • Excellent Switching Times Iq = 0.08 A : tr = 0.7 /us (Max.), tf = 0.5 /us (Max.)
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2SC5465
Temperatur465
2SC5465
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Untitled
Abstract: No abstract text available
Text: 2SC5462 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output HITACHI Features • High breakdown voltage VCB0= 1500 V • High speed switching tf = 0.15 |Asec typ. atfH=64kHz • Isolated package TO-3PFM Outline T O -3P FM 1. Base 2. Collector
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2SC5462
64kHz
ADE-208-671
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2SC5466
Abstract: No abstract text available
Text: TO SH IBA 2SC5466 TOSHIBA TRANSISTOR DYNAMIC FOCUS APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5466 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 10 ±0.3 r HIGH VOLTAGE AMPLIFIER APPLICATIONS o • H igh Voltage ^3.2 ± 0.2 o ~i 2.7±Q 2 o +i in : V q e O = 800 V
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2SC5466
2SC5466
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