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    2SC5324 Search Results

    2SC5324 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC5324 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5324 Unknown NPN Transistor Scan PDF
    2SC5324 Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    2SC5324 Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF

    2SC5324 Datasheets Context Search

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    2SK3075 equivalent

    Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
    Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz


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    PDF 2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : |S2le|2= 12dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


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    PDF 2SC5324

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE mm v mm V H F- U H F BAND LOW NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure High Gain : N F = 1 .4 d B f= 2 G H z : |S2 1 e l2~ 1 2 d B ( f — 2 G H z ) M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SC5324

    2SC5324

    Abstract: No abstract text available
    Text: T O S H IB A 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4 dB f = 2 GHz : |S21el2 = 12 dB (f = 2 GHz) 2.1 ± 0.1 1.25 ± 0.1


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    PDF 2SC5324 2SC5324

    marking IAY

    Abstract: 2SC5324
    Text: TOSHIBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : |S2l e|2= 12dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


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    PDF 2SC5324 marking IAY 2SC5324

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 U nit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz :|S21el2= 12<lB (f=2GHz) 2.1 ± 0.1 . 1.25 ± 0-1 T3<\ MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC5324 S21el2=

    2SC5324

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : |S2l e|2= 12dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan
    PDF 2SC5324 2SC5324

    2SC5324

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4 dB f = 2 GHz : |S21el2 = 12 dB (f = 2 GHz) 2.1 ± 0.1 1.25 ± 0.1 CHARACTERISTIC


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    PDF 2SC5324 2SC5324