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    2SC5322F Search Results

    2SC5322F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC5322FT Unknown NPN Transistor Scan PDF
    2SC5322FT Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
    2SC5322FT Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF

    2SC5322F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192

    3SK73

    Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
    Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112

    FET K161

    Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
    Text: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923

    2sc5088 horizontal transistors

    Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
    Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    2SK3075 equivalent

    Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
    Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz


    Original     		PDF 2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5322FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : |S2i e|2 = 10 dB (f = 2 GHz) 1.2 ±0 .0 5 0.8 ± 0.05


    OCR Scan     		PDF 2SC5322FT

    2SC5322F

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5322F TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : |S2i e|2= lOdB (f=2GHz) 1.6 ± 0.1 0.85 ±0.1 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5322F 2SC5322F

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5322FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 <; f 5 3 ? ? FT O V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4dB f=2GHz High Gain : |S2l e|2 = 10dB (f=2GHz) Unit in mm 1.2 ± 0.05 0.8 ± 0.05


    OCR Scan     		PDF 2SC5322FT

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5322F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE mm v w f VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : jS2i ep= lOdB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC5322F

    2SC5322FT

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5322FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : |S2l e|2 = 10 dB (f = 2 GHz) MAXIMUM RATINGS ÍTa = 25°CÌ


    OCR Scan     		PDF 2SC5322FT 0022g 2SC5322FT

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5322F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : |S2i e|2= 10dB (f=2GHz) 1.6 ± 0.1 0.85 ±0.1 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5322F

    2SC5322FT

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5322FT TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT O V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4dB f=2GHz High Gain : |S2i e|2= 10dB (f=2GHz) Unit in mm 1.2 ± 0.05 0.8 ± 0.05


    OCR Scan     		PDF 2SC5322FT 2SC5322FT