2SC5130
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC5130 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base
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2SC5130
O-220F
O-220F)
2SC5130
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2SC5139
Abstract: DSA003728
Text: 2SC5139 Silicon NPN Epitaxial ADE-208-226 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter
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2SC5139
ADE-208-226
2SC5139
DSA003728
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Hitachi DSA0076
Abstract: 2SC5138
Text: 2SC5138 Silicon NPN Epitaxial ADE-208-225A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 6 GHz typ • High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHz Outline SMPAK
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2SC5138
ADE-208-225A
Hitachi DSA0076
2SC5138
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Untitled
Abstract: No abstract text available
Text: 2SC5139 Silicon NPN Epitaxial ADE-208-226 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline 2SC5139 Absolute Maximum Ratings Ta = 25°C
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2SC5139
ADE-208-226
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Hitachi DSA002756
Abstract: No abstract text available
Text: 2SC5138 Silicon NPN Epitaxial ADE-208-225 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 6 GHz typ • High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHz Outline 2SC5138 Absolute Maximum Ratings Ta = 25°C
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2SC5138
ADE-208-225
Hitachi DSA002756
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2SC5138
Abstract: Hitachi DSA0014
Text: 2SC5138 Silicon NPN Epitaxial Transistor Application VHF & UHF wide band amplifier SMPAK Features • High gain bandwidth product fT = 6 GHz typ. • High gain, low noise figure PG = 13 dB typ., NF = 1.8 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector
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2SC5138
2SC5138
Hitachi DSA0014
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2SC5130
Abstract: 2sc5 IC15A
Text: Inchange Semiconductor Product Specification 2SC5130 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base
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Original
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2SC5130
O-220F
O-220F)
2SC5130
2sc5
IC15A
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Hitachi DSA00279
Abstract: No abstract text available
Text: 2SC5136 Silicon NPN Epitaxial ADE-208-223 1st. Edition Application VHF/UHF wide band amplifier Features • High gain bandwidth product fT = 3.8 GHz typ • High gain, low noise figure PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz Outline 2SC5136 Absolute Maximum Ratings Ta = 25°C
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2SC5136
ADE-208-223
Hitachi DSA00279
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Hitachi DSA0076
Abstract: 2SC5136
Text: 2SC5136 Silicon NPN Epitaxial ADE-208-223A Z 2nd. Edition Mar. 2001 Application VHF/UHF wide band amplifier Features • High gain bandwidth product fT = 3.8 GHz typ • High gain, low noise figure PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz Outline SMPAK
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2SC5136
ADE-208-223A
Hitachi DSA0076
2SC5136
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c2075
Abstract: C-2075
Text: 2SC5132A Silicon NPN Triple Diffused Planar Preliminary July 1994 Application Character display horizontal deflection output Features • High breakdown voltage VCES = 1500 V, IC = 8 A • Built–in damper diode type • Isolated package TO-3P•FM TO–3PFM N
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2SC5132A
c2075
C-2075
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2SC5139
Abstract: Hitachi DSA0014
Text: 2SC5139 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz typ. • High gain, low noise figure PG = 15 dB typ., NF = 1.1 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector
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2SC5139
2SC5139
Hitachi DSA0014
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2SC5137
Abstract: Hitachi DSA00395
Text: 2SC5137 Silicon NPN Epitaxial ADE-208-224 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter
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2SC5137
ADE-208-224
2SC5137
Hitachi DSA00395
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2SC5130
Abstract: FM20
Text: 2SC5130 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Ratings Unit VCB=500V 100max µA VEB=10V 10max µA IC=25mA 400min ICBO VCEO 400 V IEBO VEBO 10 V V(BR)CEO 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30 10.1±0.2
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2SC5130
100max
10max
400min
Pulse10)
20typ
30typ
O220F)
2SC5130
FM20
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2SC5139
Abstract: DSA003641
Text: 2SC5139 Silicon NPN Epitaxial ADE-208-226A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline
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2SC5139
ADE-208-226A
2SC5139
DSA003641
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Hitachi DSA002756
Abstract: No abstract text available
Text: 2SC5139 Silicon NPN Epitaxial ADE-208-226 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline 2SC5139 Absolute Maximum Ratings Ta = 25°C
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Original
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2SC5139
ADE-208-226
Hitachi DSA002756
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PDF
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Hitachi DSA00279
Abstract: No abstract text available
Text: 2SC5137 Silicon NPN Epitaxial ADE-208-224 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHz Outline 2SC5137 Absolute Maximum Ratings Ta = 25°C
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Original
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2SC5137
ADE-208-224
Hitachi DSA00279
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PDF
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Untitled
Abstract: No abstract text available
Text: HITACHI 2SC5132A-Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output Features • High breakdown voltage VCES= 1500 V, Ic = 8 A • Built-in damper diode type • Isolated package TO-3P*FM Absolute Maximum Ratings Ta = 25°C
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OCR Scan
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2SC5132A------Silicon
2SC5132A
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PDF
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Untitled
Abstract: No abstract text available
Text: H ITACHI 2SC5136-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fp = 3.8 GHz typ. • High gain, low noise figure PG = 11 dB typ., N F = 2.5 dB typ. at f = 9 00 MHz 1. Emitter
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OCR Scan
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2SC5136------Silicon
2SC5136
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC5132A Silicon NPN Triple Diffused Planar HITACHI Preliminary July 1994 Application Character display horizontal deflection output Features • High breakdown voltage VCES= 1500 V, IC = 8 A • Built-in damper diode type • Isolated package TO-3P*FM T O -3P F M N
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OCR Scan
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2SC5132A
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC5139 Silicon N PN Epitaxial HITACHI Application V H F / U H F w ide band am plifier Features • H igh gain bandw idth product fT = 11 G H z typ • H igh gain, low noise figure PG = 15 dB typ, N F = 1.1 dB typ at f = 9 0 0 M H z Outline SMPAK 1. Emitter
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OCR Scan
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2SC5139
ADE-208-226
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code Transistor ya
Abstract: MARKING CODE YA TRANSISTOR
Text: HITACHI 2SC5137-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f j - 10 GHz typ. • High gain, low noise figure PG = 16.5 dB typ., NF = 1.5 dB typ. at f = 900 MHz 1. Emitter 2. Base
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OCR Scan
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2SC5137------Silicon
2SC5137
code Transistor ya
MARKING CODE YA TRANSISTOR
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208224 HZ
Abstract: No abstract text available
Text: 2SC5137 Silicon NPN Epitaxial HITACHI Application V H F / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHz Outline SMPAK 1. Emitter 2. B ase 3. Collector
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OCR Scan
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2SC5137
ADE-208-224
208224 HZ
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PDF
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Untitled
Abstract: No abstract text available
Text: HITACHI 2SC5139-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f-p = 11 GHz typ. • High gain, low noise figure PG = 15 dB typ., NF = 1.1 dB typ. at f = 900 MHz 1. Emitter 2. Base
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OCR Scan
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2SC5139------Silicon
2SC5139
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC5136 Silicon N P N Epitaxial HITACHI ADE-208-223 1st. Edition Application VHF/UHF wide band amplifier Features • High gain bandwidth product • High gain, low noise figure fT = 3 ,8 GHz typ PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz Outline ! i j
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OCR Scan
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ADE-208-223
2SC5136
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