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    2SC4910 NPN Search Results

    2SC4910 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    2SC4910 NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features Package Dimensions • On-chip emitter ballast resistors. unit:mm 2084B [2SC4910] 4.5 1.9 10.5 2.6 1.4 1.0 8.5 1.2 7.5 1.2 1.6 0.5 0.5 1 Specifications


    Original     		ENN4411 2SC4910 2084B 2SC4910] PDF

    transistor 2sc4910

    Abstract: 2SC4910 2SC4910 npn 2SC491 AX-8548
    Text: Ordering number:EN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features Package Dimensions • On-chip emitter ballast resistors. unit:mm 2084B [2SC4910] 1.9 10.5 4.5 2.6 1.4 1.0 8.5 1.2 7.5 1.2 1.6 0.5 0.5 1 2.5


    Original     		EN4411 2SC4910 2084B 2SC4910] transistor 2sc4910 2SC4910 2SC4910 npn 2SC491 AX-8548 PDF

    2SC4910

    Abstract: ITR07744 ITR07745 ITR07746 AO117
    Text: Ordering number:ENN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features Package Dimensions • On-chip emitter ballast resistors. unit:mm 2084B [2SC4910] 4.5 1.9 10.5 2.6 1.4 1.0 8.5 1.2 7.5 1.2 1.6 0.5 0.5 1 Specifications


    Original     		ENN4411 2SC4910 2084B 2SC4910] 2SC4910 ITR07744 ITR07745 ITR07746 AO117 PDF

    transistor 2sc4910

    Abstract: N4411 2SC4910 ITR07744 ITR07745 ITR07746 ITR07747 ITR07748 AO1176 44113
    Text: 注文コード No. N 4 4 1 1 2SC4910 No. N4411 30700 2SC4910 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF 帯電力増幅用 ・エミッタ安定化抵抗を内蔵。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original     		2SC4910 N4411 200mA 175MHz, 2084B ITR07749 ITR07750 175MHz ITR07748 transistor 2sc4910 N4411 2SC4910 ITR07744 ITR07745 ITR07746 ITR07747 ITR07748 AO1176 44113 PDF

    transistor 2sc4910

    Abstract: 2SC4910 2SC4910 npn 13J2
    Text: Ordering num ber: EN44 11 No.4411 _ 2SC4910 NPN Epitaxial Planar Silicon Transistor SA\YO 1 VHF-Band Power Amp Applications Features • On-chip emitter ballast resistors. Absolute Maximum Ratings at Ta = 25°C Collector-to-Base Voltage Vcbo Collector-to-Emitter Voltage


    OCR Scan     		EN4411 2SC4910 transistor 2sc4910 2SC4910 2SC4910 npn 13J2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN4411 2SC4910 NÓ.4411 NPN Epitaxial Planar Silicon Transistor VHF-Band Power Amp Applications F eatures • On-chip emitter ballast resistors. A bsolute M aximum R atings at Ta=25°C Collector-to-Base Voltage V cbo Collector-to-Emitter Voltage


    OCR Scan     		EN4411 2SC4910 PDF

    C3293

    Abstract: C3502 c3955 C3953 D1347 D1804 C3467 a1540 D1803 a1538
    Text: SA0YO New Package FLP Full Mold Large P a c k a g e Seri es Sanyo hasdeveloped FLP (Full Mold Large Package) to meet the needs of miniaturization and automatic insertion in the midst of progressingindustrial and consumer electronics. Though it is a large power type with Pc=1.5W, it is achieved that theheight on


    OCR Scan     		/C3467 A1380/C3502 A1371/C3468 A1381/C3503 A1773/C4616 C3950 A1536/C3951 A1537/C3952 A1538/C3953 A1539/C3954 C3293 C3502 c3955 C3953 D1347 D1804 C3467 a1540 D1803 a1538 PDF

    C3293

    Abstract: D1804 c3807 C3953 C3502 C3467 d1815 B985 B1166 c3950
    Text: SA0YO N e w P a c k a g e FLP Full M o l d L a r ge P a c k a g e S e r i e s Sanyo hasdeveloped FLP (Full Mold Large Package) to meet the needs of miniaturization and automatic insertion in themidst of progressingindustrial and consumer electronics. Though it is a large power type with Pc=1.5ff, it is achieved that


    OCR Scan     		C3950 A1536/C3951 A1537/C3952 A1538/C3953 A1539/C3954 A1540/C3955 A1541/C3956 C39Q2 MT950216TR C3293 D1804 c3807 C3953 C3502 C3467 d1815 B985 B1166 PDF

    smd transistor marking 12W

    Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
    Text: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3


    Original     		MCH4009 17dB2GHz SC-72 SC-43 SC-51 O-226 SC-71 O-126 O-92MOD smd transistor marking 12W SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103 PDF