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    2SC478 Search Results

    2SC478 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    2SC4784YA-TR-E Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, CMPAK, / Visit Renesas Electronics Corporation
    2SC4783-T1-A Renesas Electronics Corporation Small Signal Bipolar Transistors, USM, / Visit Renesas Electronics Corporation
    2SC4784YA-TL-E Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, CMPAK, / Visit Renesas Electronics Corporation
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    2SC478 Price and Stock

    Rochester Electronics LLC 2SC4784YA-TR-E

    RF 0.02A, NPN
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    DigiKey 2SC4784YA-TR-E Bulk 30,000 1,159
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    Renesas Electronics Corporation 2SC4783-T1-A

    TRANSISTOR NPN USM SC-75
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    DigiKey 2SC4783-T1-A Reel
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    Avnet Americas 2SC4783-T1-A Bulk 4 Weeks 1,396
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    Rochester Electronics 2SC4783-T1-A 442,450 1
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    Renesas Electronics Corporation 2SC4784YA-TR-E

    - Bulk (Alt: 2SC4784YA-TR-E)
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    Avnet Americas 2SC4784YA-TR-E Bulk 4 Weeks 1,396
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    Rochester Electronics 2SC4784YA-TR-E 30,000 1
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    Hitachi Ltd 2SC4784YA-08TR

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    Bristol Electronics 2SC4784YA-08TR 2,500
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    Renesas Electronics Corporation 2SC4783T1AL6

    Bipolar Transistor (BJT)
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    Chip1Stop 2SC4783T1AL6 13,650
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    2SC478 Datasheets (76)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC478 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC478 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC478 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC478 Unknown Cross Reference Datasheet Scan PDF
    2SC478 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC478 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC478 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC478 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC478 Unknown Vintage Transistor Datasheets Scan PDF
    2SC478 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC478 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC4780 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4780 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC4780 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4780 Panasonic Transistor Selection Guide Scan PDF
    2SC4781 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: LSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor Original PDF
    2SC4781 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC4781 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4781 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4781 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SC478 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    zo 103 ma

    Abstract: 2SC4784 DSA003637
    Text: 2SC4784 Silicon NPN Epitaxial ADE-208-1121A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ. • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline


    Original     		PDF 2SC4784 ADE-208-1121A zo 103 ma 2SC4784 DSA003637

    Hitachi DSA002750

    Abstract: No abstract text available
    Text: 2SC4784 Silicon NPN Bipolar Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base


    Original     		PDF 2SC4784 D-85622 Hitachi DSA002750

    Hitachi DSA002746

    Abstract: No abstract text available
    Text: 2SC4784 Silicon NPN Bipolar Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base


    Original     		PDF 2SC4784 D-85622 Hitachi DSA002746

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC4787 Silicon NPN epitaxial planar type For intermediate frequency amplification Unit: mm 0.7 2.5±0.1 (0.8) (1.0) 3.5±0.1 • Features M Di ain sc te on na tin nc ue e/ d • High transition frequency fT • Satisfactory linearity of forward current transfer ratio hFE


    Original     		PDF 2SC4787

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching Unit: mm +0.2 2.8 –0.3 M Di ain sc te on na tin nc ue e/ d 1.45 0.95 3 +0.1 1.9±0.2 0.65±0.15 1 0.95 ● +0.2 ● 0.65±0.15 High-speed switching. Low collector to emitter saturation voltage VCE sat .


    Original     		PDF 2SC4782

    2SC4784

    Abstract: DSA003768
    Text: 2SC4784 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ. • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector


    Original     		PDF 2SC4784 2SC4784 DSA003768

    2SC4782

    Abstract: XP05555 XP5555
    Text: Composite Transistors XP05555 XP5555 Silicon NPN epitaxial planer transistor Unit: mm For high speed switching 1 6 2 5 3 4 0 to 0.1 2SC4782 x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.


    Original     		PDF XP05555 XP5555) 2SC4782 2SC4782 XP05555 XP5555

    2SC4789

    Abstract: No abstract text available
    Text: 2SC4789 Silicon NPN Triple Diffused Application TO–3PL Character Display Horizontal Deflection Output Features • High speed switching time: 0.5 µs max • High breakdown voltage, high current: VCBO = 1500 V, IC = 25 A • Suitable for large size CRT Display


    Original     		PDF 2SC4789 2SC4789

    marking L5

    Abstract: 2SC4783 SC-75
    Text: DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR 2SC4783 NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SC4783 is NPN silicon epitaxial transistor. 0.15 +0.1 –0.05 0.3 +0.1 –0 FEATURES • High voltage: VCEO = 50 V • Can be automatically mounted


    Original     		PDF 2SC4783 2SC4783 SC-75 marking L5 SC-75

    2SC4783

    Abstract: D1561 2SA1836 SC-75
    Text: データ・シート シリコン・トランジスタ Silicon Transistor 2SC4783 NPN エピタキシアル形シリコン・トランジスタ 低周波増幅用 外形図 （単位：mm） 2SC4783 は，超小型ミニモールド・デバイスであり，実装


    Original     		PDF 2SC4783 SC-70 2SA1836 SC-75 Cycle50% D15616JJ3V0DS00 D15616JJ3V0DS 2SC4783 D1561 2SA1836 SC-75

    Hitachi DSA002755

    Abstract: No abstract text available
    Text: 2SC4784 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ. • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline 2SC4784 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SC4784 Hitachi DSA002755

    2SC4787

    Abstract: No abstract text available
    Text: Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit: mm 0.15 0.65 max. 14.5±0.5 ● High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. Allowing supply with the radial taping.


    Original     		PDF 2SC4787 2SC4787

    2SC4784

    Abstract: 2SC4784YA-TL-E PTSP0003ZA-A c 3866
    Text: 2SC4784 Silicon NPN Epitaxial REJ03G0730-0300 Previous ADE-208-1121A Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ. • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz


    Original     		PDF 2SC4784 REJ03G0730-0300 ADE-208-1121A) PTSP0003ZA-A 2SC4784 2SC4784YA-TL-E PTSP0003ZA-A c 3866

    2SC4781

    Abstract: C4781
    Text: 2SC4781 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4781 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A) : hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC4781 2SC4781 C4781

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Type SMD IC Product specification 2SC4782 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 Mini type package, allowing downsizing of the equipment and automatic 0.55 Low collector to emitter saturation voltage VCE sat . +0.1 1.3-0.1 +0.1


    Original     		PDF 2SC4782 OT-23

    Untitled

    Abstract: No abstract text available
    Text: 2SC4781 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4781 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A) : hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC4781

    Untitled

    Abstract: No abstract text available
    Text: 2SC4781 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4781 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A) : hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC4781

    Untitled

    Abstract: No abstract text available
    Text: 2SC4789 Silicon NPN Triple Diffused HITACHI Application Character display horizontal deflection output Features • High speed switching time: 0.5 |_is max • High breakdown voltage, high current: VCB0 = 1500 V, Ic = 25 A • Suitable for large size CRT Display


    OCR Scan     		PDF 2SC4789

    Untitled

    Abstract: No abstract text available
    Text: 2SC4789 Silicon NPN Triple Diffused HITACHI Application Character display horizontal deflection output Features • High speed switching time: 0.5 |is max • High breakdown voltage, high current: VCBO= 1500 V, Ic = 25 A • Suitable for large size CRT Display


    OCR Scan     		PDF 2SC4789

    c 458 c transistor

    Abstract: No abstract text available
    Text: 2SC4784-Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f-p = 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz 1. Emitter 2. Base 3. Collector


    OCR Scan     		PDF 2SC4784-----Silicon 2SC4784 c 458 c transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SC4784 Silicon NPN Epitaxial HITACHI Application V H F / U H F w ide band am plifier Features • H igh gain bandw idth product fx = 10 G H z Typ. • H igh gain, low noise figure PG - 15.0 dB Typ, N F = 1.2 dB T yp at f = 900 M H z Outline CM PAK 4 P "’


    OCR Scan     		PDF 2SC4784 IcB117

    c 3866 transistor

    Abstract: No abstract text available
    Text: 2SC4784 Silicon NPN Bipolar Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ. NF = 1.2 dB typ at f = 900 MHz Outline CM PAK 2 2. Base 3. Collector


    OCR Scan     		PDF 2SC4784 D89-9 c 3866 transistor

    SC47

    Abstract: No abstract text available
    Text: H ITACHI 2SC4789-Silicon NPN Triple Diffused Application T O -3P L Character Display Horizontal Deflection Output Features • High speed switching time: 0.5 |as max • High breakdown voltage, high current: V c b o ~ 1500 V, Ic = 25 A • Suitable for large size CRT Display


    OCR Scan     		PDF 2SC4789 SC47

    2SC4781

    Abstract: Toshiba NOR FLASH
    Text: 2SC4781 TO SH IBA TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4781 Unit in mm 5.1 MAX. MEDIUM POWER AMPLIFIER APPLICATIONS • • High DC Current Gain and Excellent hEE Linearity : hEE (i) = 200~600 (VCE = 2V, Ic = 1A)


    OCR Scan     		PDF 2SC4781 2SC4781 Toshiba NOR FLASH