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    2SC4738F Search Results

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    2SC4738F Price and Stock

    Toshiba America Electronic Components 2SC4738F-GR(TPL3,F)

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    Quest Components 2SC4738F-GR(TPL3,F) 5,518
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    Toshiba America Electronic Components 2SC4738F

    NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) / Trans GP BJT NPN 50V 0.15A 3-Pin ESM
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    Win Source Electronics 2SC4738F 16,544
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    Toshiba America Electronic Components 2SC4738F-GR

    Audio Frequency General Purpose Amplifier Applications / Trans GP BJT NPN 50V 0.15A 3-Pin ESM
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    Win Source Electronics 2SC4738F-GR 3,610
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    2SC4738F Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC4738F Unknown NPN Transistor Scan PDF
    2SC4738F Toshiba SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Scan PDF
    2SC4738F Toshiba NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) Scan PDF
    2SC4738F-GR Toshiba 2SC4738 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, ESM, 2-2HA1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC4738FGR Toshiba Silicon NPN Transistor Scan PDF
    2SC4738FT Toshiba General Purpose Transistors (Single); Surface Mount Type: Y; Package: TESM; Number of Pins: 3; Comments: General-purpose; Part Number: 2SA1832FT; DC Current Gain hFE, min: (min 70) (max 400); DC Current Gain hFE, max: (max 0.25); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max 50) Original PDF
    2SC4738FT Toshiba Original PDF
    2SC4738FTGR Toshiba 2SC4738 - TRANSISTOR SMALL SIGNAL TRANSISTOR, 2-1B1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC4738FT-GR Toshiba 2SC4738 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1B1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC4738FTY Toshiba 2SC4738 - TRANSISTOR SMALL SIGNAL TRANSISTOR, 2-1B1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC4738FT-Y Toshiba 2SC4738 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1B1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC4738FV Toshiba Silicon NPN Epitaxial Transistor Original PDF
    2SC4738FV Toshiba 2SC4738 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC4738FV-GR Toshiba 2SC4738 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC4738FV-Y Toshiba 2SC4738 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC4738F-Y Toshiba 2SC4738 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, ESM, 2-2HA1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC4738FY Toshiba Silicon NPN Transistor Scan PDF

    2SC4738F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1832FT

    Abstract: 2SC4738FT
    Text: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • • • • • Unit: mm High Voltage: VCEO = 50 V High Current: IC = 150 mA (max) High hFE: hFE = 120 to 400 Excellent hFE Linearity


    Original     		PDF 2SC4738FT 2SA1832FT 2SA1832FT 2SC4738FT

    2SA1832FT

    Abstract: 2SC4738FT
    Text: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications Unit: mm • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity


    Original     		PDF 2SC4738FT 2SA1832FT 125transportation 2SA1832FT 2SC4738FT

    2SC4738F

    Abstract: 2SA1832F
    Text: 2SC4738F シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4738F ○ 低周波増幅用 ○ AM 増幅用 単位: mm • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) : VCEO = 50 V • 電流増幅率が高い。


    Original     		PDF 2SC4738F 2SA1832F 2SC4738F 2SA1832F

    2sc4738ft

    Abstract: 2SA1832FT
    Text: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		PDF 2SC4738FT 2SA1832FT 2sc4738ft 2SA1832FT

    2sc4738ft

    Abstract: 2SA1832FT IC5010
    Text: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		PDF 2SC4738FT 2SA1832FT 2sc4738ft 2SA1832FT IC5010

    Untitled

    Abstract: No abstract text available
    Text: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		PDF 2SC4738FT 2SA1832FT 961001EAA1

    2SA1832FT

    Abstract: 2SC4738FT
    Text: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications Unit: mm • High Voltage: VCEO = 50 V · High Current: IC = 150 mA (max) · High hFE: hFE = 120 to 400 · Excellent hFE Linearity


    Original     		PDF 2SC4738FT 2SA1832FT 125transportation 2SA1832FT 2SC4738FT

    2SA1832FT

    Abstract: 2SC4738FT
    Text: 2SC4738FT シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4738FT ○ 低周波増幅用 ○ AM 増幅用 単位: mm • 高耐圧です。 : VCEO = 50 V • コレクタ電流が大きい。 : IC = 150 mA (最大) • 電流増幅率が高い。


    Original     		PDF 2SC4738FT 2SA1832FT 2SA1832FT 2SC4738FT

    2SC4738FV

    Abstract: MARKING LY toshiba 2SA1832FV
    Text: 2SC4738FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FV Audio Frequency General Purpose Amplifier Applications High hFE: hFE = 120 ~ 400 Excellent hFE Linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1832FV


    Original     		PDF 2SC4738FV 2SA1832FV 2SC4738FV MARKING LY toshiba 2SA1832FV

    Untitled

    Abstract: No abstract text available
    Text: 2SC4738F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738F Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Unit: mm • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		PDF 2SC4738F 2SA1832F

    Untitled

    Abstract: No abstract text available
    Text: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • • • • • Unit: mm High Voltage: VCEO = 50 V High Current: IC = 150 mA (max) High hFE: hFE = 120 to 400 Excellent hFE Linearity


    Original     		PDF 2SC4738FT 2SA1832FT

    2SA1832F

    Abstract: 2SC4738F
    Text: 2SC4738F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738F Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		PDF 2SC4738F 2SA1832F 2SA1832F 2SC4738F

    2sc4738f

    Abstract: 2SA1832F
    Text: 2SC4738F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738F Audio Frequency General Purpose Amplifier Applications • Unit: mm High voltage and high current: VCEO = 50 V, IC = 150 mA (max) · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		PDF 2SC4738F 2SA1832F 2sc4738f 2SA1832F

    2SA1832F

    Abstract: 2SC4738F
    Text: 2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832F Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)


    Original     		PDF 2SA1832F 2SC4738F 2SA1832F 2SC4738F

    LM3582

    Abstract: max1987 RP113 LM358 1.2 N3 3kv SEC MLB-160808-0220B-N3 quanta 1394XO PWS-37 txc 14.318MHZ
    Text: 1 2 * GM 1. VCC PR57: 4 5 1 GME 1.2V 17.4K/F 1.35V 14K/F 27.4/F 37.4/F 2. HLRCOMP R91: 3 Intel RB1 Block Diagram BANIAS/Dothan MBX-112 478 PIN micro FC-BGA A A System bus 4x100 MHz R/G/B CRT NORTH BRIDGE LVDS SIGNAL LCD ( Up to UXGA ) DRAM SIGNAL Montara-GME


    Original     		PDF 14K/F MBX-112 4x100 66MHz 266-MB/s) 82801DBM ALC203 TPA0312 33MHZ TI-PCI7420 LM3582 max1987 RP113 LM358 1.2 N3 3kv SEC MLB-160808-0220B-N3 quanta 1394XO PWS-37 txc 14.318MHZ

    G5243T11U

    Abstract: WPCE775L R23G G682L09TT12U dk05 SSX35BCB Sony TV SMPS AC495 ich9 quanta
    Text: 1 2 3 4 5 1 TW1 Block Diagram CPU Penryn 14.318MHz P3-4 478 PIN micro FC-PGA A A FSB 667 MHz(166X4) FSB 800MHz(200X4) FSB 1066MHZ(266X4) CLOCK GEN ICS9LPRS365 DVI DVI P23 LCD Cantiga LVDS P7 CRT R/G/B P10 UNBUFFERED DDRII SODIMM DDRII 667/800 P2 P11 GM45


    Original     		PDF 318MHz 166X4) 800MHz 200X4) 1066MHZ 266X4) ICS9LPRS365 ALC262 R5C847 P17-18 G5243T11U WPCE775L R23G G682L09TT12U dk05 SSX35BCB Sony TV SMPS AC495 ich9 quanta

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    2SA1832FT

    Abstract: 2SC4738FT
    Text: 2SA1832FT シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1832FT ○ 低周波増幅用 • 単位: mm 高耐圧です。 : VCEO = −50 V • コレクタ電流が大きい。 : IC = −150 mA (最大) • 電流増幅率が高い。


    Original     		PDF 2SA1832FT 2SC4738FT 2SA1832FT 2SC4738FT

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    2SC4738F

    Abstract: 2SA1832F
    Text: TO SH IBA 2SC4738F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • • • • • High Voltage and High Current : V c e O - 50 V, Ic = 150 mA (Max.) Excellent hjpg Linearity


    OCR Scan     		PDF 2SC4738F 2SA1832F c/-25/" 2SC4738F 2SA1832F

    transistor ESM 3000

    Abstract: 2SA1832F 2SC4738F
    Text: TOSHIBA 2SC4738F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • • • • • 1.6 ± 0.1 High Voltage and High Current : V ç;e O = 50V, Ig = 150mA (Max.) Excellent hFE Linearity


    OCR Scan     		PDF 2SC4738F 150mA 2SA1832F c/-25/- transistor ESM 3000 2SA1832F 2SC4738F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4738F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS • 1.6 ± 0.1 High Voltage and High Current ; V0 EO = 5OV, Iq = 150mA (Max.) Excellent hpg Linearity : hpE dC = 0.1mA) / hpE dC = 2mA) = 0.95 (Typ.)


    OCR Scan     		PDF 2SC4738F 150mA 2SA1832F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC 4738F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738F AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • U nit in mm 1.6 ± 0.1 High Voltage and High Current 0.85 ± 0.1 : V cE O = 50V> XC = !50m A (Max.) • Excellent hpj; Linearity


    OCR Scan     		PDF 2SC4738F 2SA1832F

    2SA1832F

    Abstract: 2SC4738F
    Text: TO SH IBA 2SC4738F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • • • • • 1.6 ± 0.1 0.85 ± 0.1 High Voltage and High Current : V c e O - 50 V, Ic = 150 mA (Max.)


    OCR Scan     		PDF 2SC4738F 2SA1832F 2SA1832F 2SC4738F