C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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RF NPN POWER TRANSISTOR 3 GHZ 10W
Abstract: 2SC4526 P028
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4526 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2SC4526 is a silicon NPN ep itaxial planar typ e transistor specifically designed fo r RF power a m p lifie r applications in 1.65GHz. FEATURES • High pow er gain: Gpb ^ 4.5dB , P0 = 28W
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2SC4526
65GHz.
65GHz,
RF NPN POWER TRANSISTOR 3 GHZ 10W
P028
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4526 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 6 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifier applications in Dimensions in mm
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2SC4526
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2sc4526 mitsubishi
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4526 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2SC 4526 is a silicon NPN epitaxial planar type transistor specifically designed for R F power amplifier applications in 1.65GHz. D im e n sio n s in m m
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2SC4526
2SC4526
65GHz.
65GHz,
2SC4525
2sc4526 mitsubishi
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transistor D 2331
Abstract: 2331 TRANSISTOR T31B
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed fo r RF power amplifiers in 1.65GHz. 4 + 0.5 C1.5MAX C1.5MAX FEATURES
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2SC4838
2SC4838
65GHz.
65GHz,
transistor D 2331
2331 TRANSISTOR
T31B
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed -for RF power amplifiers in 1,65GHz. FEATURES High power gain : Gpb S 9.3dB, Po fe 6W
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2SC4838
2SC4838
65GHz.
65GHz,
2SC4525
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2SC4515
Abstract: 2SC4536 2SC4561 2SC4550 c455 2SC4516 2SC4519 2SC4520 2SC4521 2SC4523
Text: - 206 - m X Ë f à <Ta=25,C 1*EPÍ¿Tc=25'C 2SC4515 föT HF LN A n VcBO Vc e o IcCDO Pc Pc* V) (V) (A) (W) (W) 15 10 0.05 "(max) (/¿A) 0.2 VcB (V) 1 10 % (min) ft 4# (max) iê (Ta=25<C ) (max) (V) ic/ÏE (A) Vc e (V) [*EP(atypffi] 50 300 8 0.01 (max) (V)
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2SC4515
2SC4516
2SC4519
2SC4520
2SC4521
2SC4522
2SC4523
2SC4524
2SC4547
SC-62
2SC4515
2SC4536
2SC4561
2SC4550
c455
2SC4519
2SC4520
2SC4521
2SC4523
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