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    2SC4526 Search Results

    2SC4526 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC4526 Mitsubishi NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC4526 Mitsubishi MITSUBISHI RF POWER TRANSISTOR Scan PDF
    2SC4526 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4526 Unknown High Frequency Device Data Book (Japanese) Scan PDF

    2SC4526 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4526 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 6 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifier applications in Dimensions in mm


    OCR Scan     		PDF 2SC4526

    RF NPN POWER TRANSISTOR 3 GHZ 10W

    Abstract: 2SC4526 P028
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4526 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2SC4526 is a silicon NPN ep itaxial planar typ e transistor specifically designed fo r RF power a m p lifie r applications in 1.65GHz. FEATURES • High pow er gain: Gpb ^ 4.5dB , P0 = 28W


    OCR Scan     		PDF 2SC4526 65GHz. 65GHz, RF NPN POWER TRANSISTOR 3 GHZ 10W P028

    2sc4526 mitsubishi

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4526 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2SC 4526 is a silicon NPN epitaxial planar type transistor specifically designed for R F power amplifier applications in 1.65GHz. D im e n sio n s in m m


    OCR Scan     		PDF 2SC4526 2SC4526 65GHz. 65GHz, 2SC4525 2sc4526 mitsubishi

    transistor D 2331

    Abstract: 2331 TRANSISTOR T31B
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed fo r RF power amplifiers in 1.65GHz. 4 + 0.5 C1.5MAX C1.5MAX FEATURES


    OCR Scan     		PDF 2SC4838 2SC4838 65GHz. 65GHz, transistor D 2331 2331 TRANSISTOR T31B

    2SC4515

    Abstract: 2SC4536 2SC4561 2SC4550 c455 2SC4516 2SC4519 2SC4520 2SC4521 2SC4523
    Text: - 206 - m X Ë f à <Ta=25,C 1*EPÍ¿Tc=25'C 2SC4515 föT HF LN A n VcBO Vc e o IcCDO Pc Pc* V) (V) (A) (W) (W) 15 10 0.05 "(max) (/¿A) 0.2 VcB (V) 1 10 % (min) ft 4# (max) iê (Ta=25<C ) (max) (V) ic/ÏE (A) Vc e (V) [*EP(atypffi] 50 300 8 0.01 (max) (V)


    OCR Scan     		PDF 2SC4515 2SC4516 2SC4519 2SC4520 2SC4521 2SC4522 2SC4523 2SC4524 2SC4547 SC-62 2SC4515 2SC4536 2SC4561 2SC4550 c455 2SC4519 2SC4520 2SC4521 2SC4523

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed -for RF power amplifiers in 1,65GHz. FEATURES High power gain : Gpb S 9.3dB, Po fe 6W


    OCR Scan     		PDF 2SC4838 2SC4838 65GHz. 65GHz, 2SC4525